It is well known that femtosecond laser pulses can easily spontaneously induce deep-subwavelength periodic surface structures on transparent dielectrics but not on non-transparent semiconductors.Nevertheless,in this s...It is well known that femtosecond laser pulses can easily spontaneously induce deep-subwavelength periodic surface structures on transparent dielectrics but not on non-transparent semiconductors.Nevertheless,in this study,we demonstrate that using high-numerical-aperture 800 nm femtosecond laser direct writing with controlled pulse energy and scanning speed in the near-damage-threshold regime,polarization-dependent deep-subwavelength single grooves with linewidths of~180 nm can be controllably prepared on Si.Generally,the single-groove linewidth increases slightly with increase in the pulse energy and decrease in the scanning speed,whereas the single-groove depth significantly increases from~300 nm to~600 nm with decrease in the scanning speed,or even to over 1μm with multi-processing,indicating the characteristics of transverse clamping and longitudinal growth of such deep-subwavelength single grooves.Energy dispersive spectroscopy composition analysis of the near-groove region confirms that single-groove formation tends to be an ultrafast,non-thermal ablation process,and the oxidized deposits near the grooves are easy to clean up.Furthermore,the results,showing both the strong dependence of groove orientation on laser polarization and the occurrence of double-groove structures due to the interference of pre-formed orthogonal grooves,indicate that the extraordinary field enhancement of strong polarization sensitivity in the deep-subwavelength groove plays an important role in single-groove growth with high stability and collimation.展开更多
Bonding of Si 3N 4 ceramic was performed with Y 2O 3 Al 2O 3 SiO 2(YAS) X glass solders,which were mixed with TiO 2 (YT) and Si 3N 4 (YN), respectively. The effects of bonding conditions and interfacial r...Bonding of Si 3N 4 ceramic was performed with Y 2O 3 Al 2O 3 SiO 2(YAS) X glass solders,which were mixed with TiO 2 (YT) and Si 3N 4 (YN), respectively. The effects of bonding conditions and interfacial reaction on the joint strength were studied. The joint strength in different bonding conditions was measured by four point bending tests. The interfacial microstructures were observed and analyzed by SEM, EPMA and XRD. It is shown that with the increase of bonding temperature and holding time, the joint strength increases reaching a peak, and then decreases. When TiO 2 is put into YAS solder,the bonding interface with Si 3N 4/(Y Sialon glass+TiN)/TiN/Y Sialon glass is formed. When YAS solder is mixed with Si 3N 4 powder, the interfacial residual thermal stress may be decreased, and then the joint strength is enhanced. According to microanalyses, the bonding strength is related to interfacial reaction.展开更多
The bonding performance between synthetic diamond grit and adhesive ( Co-Si alloy) in polycrystalline diamond compact ( PDC) has been investigated. The results indicate that the carbide-forming element Si diffuses tow...The bonding performance between synthetic diamond grit and adhesive ( Co-Si alloy) in polycrystalline diamond compact ( PDC) has been investigated. The results indicate that the carbide-forming element Si diffuses towards the diamond grit and the quantity of Si element in the inter layer of diamond grit-adhesives is about two times higher than that in the other area. New compound SiC exists in the inter layer of diamond-adhesives. The formation of SiC enhances the strength and prolongs the service life of PDC. The sintering time is important to the formation of SiC.展开更多
Liquid bonding of Si 3N 4 ceramic composite was carried out with RE 2O 3 Al 2O 3 SiO 2 glass solders. The effect of bonding conditions and interfacial reaction on the joint strength was studied. The joint st...Liquid bonding of Si 3N 4 ceramic composite was carried out with RE 2O 3 Al 2O 3 SiO 2 glass solders. The effect of bonding conditions and interfacial reaction on the joint strength was studied. The joint strength under different bonding conditions was measured by four point bending tests. The interfacial microstructures were observed and analyzed by SEM, EPMA and XRD. It is shown that the liquid glass solders react with Si 3N 4 at interface, forming the Si 3N 4/Si 2N 2O/Y(La) sialon glass/Y(La) sialon glass gradient interface. With the increase of bonding temperature and holding time, the joint strength first increased reaching a peak, and then decreased. According to microanalyses, LaYO 3 precipitated from joint glass improves joint strength at room and high temperature.展开更多
A new set of technique was adopted in bonding Si-Si by using Ge (Ⅳ element),which is used as the substitute for the common hydrophilic method. The bond layer has no holes, and the edge bond-rate amounts to above 98%,...A new set of technique was adopted in bonding Si-Si by using Ge (Ⅳ element),which is used as the substitute for the common hydrophilic method. The bond layer has no holes, and the edge bond-rate amounts to above 98%, and the bond strength is above 2156 Pa. By doping the same kind of dopant with low-resistance in Ge, the stress compensation was realized.展开更多
Solid liquid state pressure bonding of Si 3N 4 ceramics with aluminum based alloys, which contain a small amount of intermetallic compounds Al 3Ti or Al 3Zr, was investigated. With this new method, the heat resistant ...Solid liquid state pressure bonding of Si 3N 4 ceramics with aluminum based alloys, which contain a small amount of intermetallic compounds Al 3Ti or Al 3Zr, was investigated. With this new method, the heat resistant properties of the bonding zone metal are improved, and the joints’ strengths at high temperature is increased. The joints’ shear strength at room temperature and at 600 ℃ reach 126～133 MPa and 32～34 MPa, respectively, with suitable bonding pressure. The reaction between aluminum and Si 3N 4 ceramics, which produces Al Si N O type compounds is the dominant interfacial reaction, while the reactions between the second active element Ti or Zr in the aluminum based alloys and Si 3N 4 ceramics also occur to some extend. [展开更多
This paper reports a study on the reconstruction of broken Si O Si bonds in iron ore tailings (IOTs) in concrete. Limestone and IOTs were used to investigate the influence of different types of coarse aggregates on th...This paper reports a study on the reconstruction of broken Si O Si bonds in iron ore tailings (IOTs) in concrete. Limestone and IOTs were used to investigate the influence of different types of coarse aggregates on the compressive strengths of concrete samples. The dif- ferences in interfacial transition zones (ITZs) between aggregate and paste were analyzed by scanning electron microscopy (SEM) and ener- gy-dispersive spectroscopy (EDS). Meanwhile, X-ray diffraction (XRD) and infrared spectroscopy (IR) were used to study microscopic changes in limestone and IOTs powders in a simple alkaline environment that simulated cement. The results show that the compressive strengths of IOTs concrete or paste are higher than those of limestone concrete or paste under identical conditions. The Ca/Si atom ratios in the ITZs of IOTs con- crete samples are lower than those of limestone concrete;the diffraction peak of the calcium silicate phase at 2θ = 29.5°, as well as the bands of Si O bonds shifting to lower wavenumbers, indicates reconstruction of the broken Si-O-Si bonds on the surfaces of IOTs with Ca(OH)2.展开更多
To remove the key impurity elements,P and B,from primary Si simultaneously,Sr and Zr co-addition to Al-Si alloy systems during solvent refining has been investigated.Sr reacts with Al,Si,and P in the melt to form a P-...To remove the key impurity elements,P and B,from primary Si simultaneously,Sr and Zr co-addition to Al-Si alloy systems during solvent refining has been investigated.Sr reacts with Al,Si,and P in the melt to form a P-containing Al_(2)Si_(2)Sr phase and Zr reacts with B to form a ZrB_(2) phase.In the Al-Si-Sr-Zr system,high removal fractions of P and B in the primary Si,with 84.8%-98.4%and 90.7%-96.7%,respectively,are achieved at the same time,respectively.The best removal effect is obtained in the sample with the addition of Sr-32000+Zr-3000μg·kg^(-1),and the removal fractions of P and B in the purified Si reach 98.4%and 96.1%.Compared with the Sr/Zr single-addition,the removal effects of Sr and Zr co-addition on P and B do not show a significant downward trend,indicating that the nucleation and growth of the B/P-containing impurity phases are mutually independent.Finally,an evolution model is proposed to describe the nucleation and the growth stages of Sr/Zr-containing compound phases,which reveals the interaction between the impurity phases and the primary Si.展开更多
Three kinds of polysilanes containing Si-H bond, ■CH_3SiCH_3■_x■CH_3SiH■_y■_n and■PhSiPh■_π■CH_3SiH■_y■CH_3SiCH_3■, have been synthesized. The structures of these copolymers were investigated by IR, ~1H-NM...Three kinds of polysilanes containing Si-H bond, ■CH_3SiCH_3■_x■CH_3SiH■_y■_n and■PhSiPh■_π■CH_3SiH■_y■CH_3SiCH_3■, have been synthesized. The structures of these copolymers were investigated by IR, ~1H-NMR and ^(13)C-NMR and their molecular weights were measured.展开更多
In-situ observation of porosity formation during directional solidification of two Al-Si alloys (7%Si and 13%Si) was made by using of micro-focus X-ray imaging.In both alloys,small spherical pores initially form in th...In-situ observation of porosity formation during directional solidification of two Al-Si alloys (7%Si and 13%Si) was made by using of micro-focus X-ray imaging.In both alloys,small spherical pores initially form in the melt far away from the eutectic solid-liquid (S/L) interface and then grow and coagulate during solidification.Some pores can float and escape from the solidifying melt front at a relatively high velocity.At the end of solidification,the remaining pores maintain spherical morphology in the near eutectic alloy but become irregular in the hypoeutectic alloy.This is attributed to different solidification modes and aluminum dendrite interactions between the two alloys.The mechanism of the porosity formation is briefly discussed in this paper.展开更多
The influence of Sr addition on pore formation in directionally solidified Al-12.3wt.% alloy was investigated using X-ray detection, optical microscope, and SEM-EDX. Results indicate that addition of Sr significantly ...The influence of Sr addition on pore formation in directionally solidified Al-12.3wt.% alloy was investigated using X-ray detection, optical microscope, and SEM-EDX. Results indicate that addition of Sr significantly increases the number density and volume fraction of porosity. The considerable rise in volume fraction of porosity is attributed to the remarkable increase in the numbers of pores formed. It is found that Sr solute in liquid Al-Si alloy can diffuse into the oxide inclusions to form loose oxide aggregations which have more activity as the nucleation sites for porosity. Adding more Sr considerably increases the numbers of active nucleation sites. There is an obvious fluctuation of pore number density during steady state solidification, which is believed to be related to a fluctuation of local hydrogen supersaturation induced by the competition of pore nucleation and growth for hydrogen solute supplement.展开更多
Integrally directional solidification of an Nb-Ti-Si based ultrahigh temperature alloy was performed in an ultrahigh temperature and high thermal gradient furnace with the use of ceramic crucibles. The microstructural...Integrally directional solidification of an Nb-Ti-Si based ultrahigh temperature alloy was performed in an ultrahigh temperature and high thermal gradient furnace with the use of ceramic crucibles. The microstructural evolution with the withdrawing rate increasing during directional solidification was revealed. The integrally directionally solidified microstructure was composed of couple grown lamellar (Nbss+(Nb,X)5Si3) eutectic colonies and a few hexagonally cross-sectioned (Nb,X)5Si3 columns (X represents Ti and Hf elements). All the directionally solidified microstructure was straightly aligned along the longitudinal axis of the specimens. With increasing of the withdrawing rate, the average diameter of the eutectic cells and inter lamella spacings in the eutectic cell decreased. The near-planar solid/liquid interface appeared when the withdrawing rate was 1μm/s, and the cellular solid/liquid interface formed when the withdrawing rate was 5 μm/s.展开更多
Pulsed Nd:YAG laser was used to irradiate Si substrate immersed in AgNO3 ethylene glycol solution to deposit Ag films along the lines scanned by laser on the substrate, which is a photo-thermal decomposing process. Th...Pulsed Nd:YAG laser was used to irradiate Si substrate immersed in AgNO3 ethylene glycol solution to deposit Ag films along the lines scanned by laser on the substrate, which is a photo-thermal decomposing process. The decomposed Ag atoms congregate and form polycrystalline Ag particles. The Ag concentration changes greatly with the total laser energyA absorbed by substrate. Transmission electron microscopy (TEM) observation shows the Ag particles are inlaid in the Si substrate. Auger electron spectrum (AES) shows that the Ag concentration decreases with the increase of the sputtering depth, and there is no oxygen element on the surface of the deposited Ag films.展开更多
基金Project supported by the Natural Science Foundation of Guangdong Province (Grant No.2021A1515012335)the National Natural Science Foundation of China (Grant No.11274400)+2 种基金Pearl River S&T Nova Program of Guangzhou (Grant No.201506010059)State Key Laboratory of High Field Laser Physics (Shanghai Institute of Optics and Fine Mechanics)State Key Laboratory of Optoelectronic Materials and Technologies (Sun Yat-Sen University)。
文摘It is well known that femtosecond laser pulses can easily spontaneously induce deep-subwavelength periodic surface structures on transparent dielectrics but not on non-transparent semiconductors.Nevertheless,in this study,we demonstrate that using high-numerical-aperture 800 nm femtosecond laser direct writing with controlled pulse energy and scanning speed in the near-damage-threshold regime,polarization-dependent deep-subwavelength single grooves with linewidths of~180 nm can be controllably prepared on Si.Generally,the single-groove linewidth increases slightly with increase in the pulse energy and decrease in the scanning speed,whereas the single-groove depth significantly increases from~300 nm to~600 nm with decrease in the scanning speed,or even to over 1μm with multi-processing,indicating the characteristics of transverse clamping and longitudinal growth of such deep-subwavelength single grooves.Energy dispersive spectroscopy composition analysis of the near-groove region confirms that single-groove formation tends to be an ultrafast,non-thermal ablation process,and the oxidized deposits near the grooves are easy to clean up.Furthermore,the results,showing both the strong dependence of groove orientation on laser polarization and the occurrence of double-groove structures due to the interference of pre-formed orthogonal grooves,indicate that the extraordinary field enhancement of strong polarization sensitivity in the deep-subwavelength groove plays an important role in single-groove growth with high stability and collimation.
文摘Bonding of Si 3N 4 ceramic was performed with Y 2O 3 Al 2O 3 SiO 2(YAS) X glass solders,which were mixed with TiO 2 (YT) and Si 3N 4 (YN), respectively. The effects of bonding conditions and interfacial reaction on the joint strength were studied. The joint strength in different bonding conditions was measured by four point bending tests. The interfacial microstructures were observed and analyzed by SEM, EPMA and XRD. It is shown that with the increase of bonding temperature and holding time, the joint strength increases reaching a peak, and then decreases. When TiO 2 is put into YAS solder,the bonding interface with Si 3N 4/(Y Sialon glass+TiN)/TiN/Y Sialon glass is formed. When YAS solder is mixed with Si 3N 4 powder, the interfacial residual thermal stress may be decreased, and then the joint strength is enhanced. According to microanalyses, the bonding strength is related to interfacial reaction.
文摘The bonding performance between synthetic diamond grit and adhesive ( Co-Si alloy) in polycrystalline diamond compact ( PDC) has been investigated. The results indicate that the carbide-forming element Si diffuses towards the diamond grit and the quantity of Si element in the inter layer of diamond grit-adhesives is about two times higher than that in the other area. New compound SiC exists in the inter layer of diamond-adhesives. The formation of SiC enhances the strength and prolongs the service life of PDC. The sintering time is important to the formation of SiC.
文摘Liquid bonding of Si 3N 4 ceramic composite was carried out with RE 2O 3 Al 2O 3 SiO 2 glass solders. The effect of bonding conditions and interfacial reaction on the joint strength was studied. The joint strength under different bonding conditions was measured by four point bending tests. The interfacial microstructures were observed and analyzed by SEM, EPMA and XRD. It is shown that the liquid glass solders react with Si 3N 4 at interface, forming the Si 3N 4/Si 2N 2O/Y(La) sialon glass/Y(La) sialon glass gradient interface. With the increase of bonding temperature and holding time, the joint strength first increased reaching a peak, and then decreased. According to microanalyses, LaYO 3 precipitated from joint glass improves joint strength at room and high temperature.
文摘A new set of technique was adopted in bonding Si-Si by using Ge (Ⅳ element),which is used as the substitute for the common hydrophilic method. The bond layer has no holes, and the edge bond-rate amounts to above 98%, and the bond strength is above 2156 Pa. By doping the same kind of dopant with low-resistance in Ge, the stress compensation was realized.
文摘Solid liquid state pressure bonding of Si 3N 4 ceramics with aluminum based alloys, which contain a small amount of intermetallic compounds Al 3Ti or Al 3Zr, was investigated. With this new method, the heat resistant properties of the bonding zone metal are improved, and the joints’ strengths at high temperature is increased. The joints’ shear strength at room temperature and at 600 ℃ reach 126～133 MPa and 32～34 MPa, respectively, with suitable bonding pressure. The reaction between aluminum and Si 3N 4 ceramics, which produces Al Si N O type compounds is the dominant interfacial reaction, while the reactions between the second active element Ti or Zr in the aluminum based alloys and Si 3N 4 ceramics also occur to some extend. [
基金financially supported by the National Natural Science Foundation of China (Nos. 51678049 and 51834001)
文摘This paper reports a study on the reconstruction of broken Si O Si bonds in iron ore tailings (IOTs) in concrete. Limestone and IOTs were used to investigate the influence of different types of coarse aggregates on the compressive strengths of concrete samples. The dif- ferences in interfacial transition zones (ITZs) between aggregate and paste were analyzed by scanning electron microscopy (SEM) and ener- gy-dispersive spectroscopy (EDS). Meanwhile, X-ray diffraction (XRD) and infrared spectroscopy (IR) were used to study microscopic changes in limestone and IOTs powders in a simple alkaline environment that simulated cement. The results show that the compressive strengths of IOTs concrete or paste are higher than those of limestone concrete or paste under identical conditions. The Ca/Si atom ratios in the ITZs of IOTs con- crete samples are lower than those of limestone concrete;the diffraction peak of the calcium silicate phase at 2θ = 29.5°, as well as the bands of Si O bonds shifting to lower wavenumbers, indicates reconstruction of the broken Si-O-Si bonds on the surfaces of IOTs with Ca(OH)2.
基金supported by the National Natural Science Foundation of China(Nos.51804294,51874272,52111540265)Anhui Provincial Natural Science Foundation(No.1808085ME121)+4 种基金the Key Laboratory of Photovoltaic and Energy Conservation Materials,Chinese Academy of Science(No.PECL2021QN003)Hefei Institutes of Physical Science,Chinese Academy of Sciences Director’s Fund(No.YZJJZX202018)International Clean Energy Talent Program by China Scholarship CouncilOpen Foundation of State Key Laboratory of Mineral Processing(No.BGRIMM-KJSKL-2022-23)Open Foundation of State Key Laboratory of Complex Nonferrous Metal Resources Clean Utilization(No.CNMRCUKF2205)。
文摘To remove the key impurity elements,P and B,from primary Si simultaneously,Sr and Zr co-addition to Al-Si alloy systems during solvent refining has been investigated.Sr reacts with Al,Si,and P in the melt to form a P-containing Al_(2)Si_(2)Sr phase and Zr reacts with B to form a ZrB_(2) phase.In the Al-Si-Sr-Zr system,high removal fractions of P and B in the primary Si,with 84.8%-98.4%and 90.7%-96.7%,respectively,are achieved at the same time,respectively.The best removal effect is obtained in the sample with the addition of Sr-32000+Zr-3000μg·kg^(-1),and the removal fractions of P and B in the purified Si reach 98.4%and 96.1%.Compared with the Sr/Zr single-addition,the removal effects of Sr and Zr co-addition on P and B do not show a significant downward trend,indicating that the nucleation and growth of the B/P-containing impurity phases are mutually independent.Finally,an evolution model is proposed to describe the nucleation and the growth stages of Sr/Zr-containing compound phases,which reveals the interaction between the impurity phases and the primary Si.
文摘Three kinds of polysilanes containing Si-H bond, ■CH_3SiCH_3■_x■CH_3SiH■_y■_n and■PhSiPh■_π■CH_3SiH■_y■CH_3SiCH_3■, have been synthesized. The structures of these copolymers were investigated by IR, ~1H-NMR and ^(13)C-NMR and their molecular weights were measured.
基金funded by the Natural Science Foundation of China under grant No:50771031GM Research Funding under contract No:GM-RP-07-211
文摘In-situ observation of porosity formation during directional solidification of two Al-Si alloys (7%Si and 13%Si) was made by using of micro-focus X-ray imaging.In both alloys,small spherical pores initially form in the melt far away from the eutectic solid-liquid (S/L) interface and then grow and coagulate during solidification.Some pores can float and escape from the solidifying melt front at a relatively high velocity.At the end of solidification,the remaining pores maintain spherical morphology in the near eutectic alloy but become irregular in the hypoeutectic alloy.This is attributed to different solidification modes and aluminum dendrite interactions between the two alloys.The mechanism of the porosity formation is briefly discussed in this paper.
基金financially supported by National Natural Science Foundation of China (grant No.51244008)GM Research Foundation under contract No.GM-RP-07-211
文摘The influence of Sr addition on pore formation in directionally solidified Al-12.3wt.% alloy was investigated using X-ray detection, optical microscope, and SEM-EDX. Results indicate that addition of Sr significantly increases the number density and volume fraction of porosity. The considerable rise in volume fraction of porosity is attributed to the remarkable increase in the numbers of pores formed. It is found that Sr solute in liquid Al-Si alloy can diffuse into the oxide inclusions to form loose oxide aggregations which have more activity as the nucleation sites for porosity. Adding more Sr considerably increases the numbers of active nucleation sites. There is an obvious fluctuation of pore number density during steady state solidification, which is believed to be related to a fluctuation of local hydrogen supersaturation induced by the competition of pore nucleation and growth for hydrogen solute supplement.
基金Supported by the National Natural Science Foundation of China (No 500671081) the Doctorate Foundation of Northwestern Polytechnical University (No CX200605)
文摘Integrally directional solidification of an Nb-Ti-Si based ultrahigh temperature alloy was performed in an ultrahigh temperature and high thermal gradient furnace with the use of ceramic crucibles. The microstructural evolution with the withdrawing rate increasing during directional solidification was revealed. The integrally directionally solidified microstructure was composed of couple grown lamellar (Nbss+(Nb,X)5Si3) eutectic colonies and a few hexagonally cross-sectioned (Nb,X)5Si3 columns (X represents Ti and Hf elements). All the directionally solidified microstructure was straightly aligned along the longitudinal axis of the specimens. With increasing of the withdrawing rate, the average diameter of the eutectic cells and inter lamella spacings in the eutectic cell decreased. The near-planar solid/liquid interface appeared when the withdrawing rate was 1μm/s, and the cellular solid/liquid interface formed when the withdrawing rate was 5 μm/s.
基金This work was financially supported by the special funds for the major basic research projects(No.G2000067205-4).
文摘Pulsed Nd:YAG laser was used to irradiate Si substrate immersed in AgNO3 ethylene glycol solution to deposit Ag films along the lines scanned by laser on the substrate, which is a photo-thermal decomposing process. The decomposed Ag atoms congregate and form polycrystalline Ag particles. The Ag concentration changes greatly with the total laser energyA absorbed by substrate. Transmission electron microscopy (TEM) observation shows the Ag particles are inlaid in the Si substrate. Auger electron spectrum (AES) shows that the Ag concentration decreases with the increase of the sputtering depth, and there is no oxygen element on the surface of the deposited Ag films.
