In recent years,next-generation power semiconductor devices,represented by silicon carbide(SiC)and gallium nitride(GaN),have gradually emerged.Because wide-bandgap(WBG)devices have better electrical characteristics th...In recent years,next-generation power semiconductor devices,represented by silicon carbide(SiC)and gallium nitride(GaN),have gradually emerged.Because wide-bandgap(WBG)devices have better electrical characteristics than those of silicon(Si)based devices,they have attracted increased attention both from academic researchers and industrial engineers.Employing WBG devices will further improve the efficiency and power density of power converters.However,the current price of WBG devices remains extremely high.Thus,some researches have focused on the hybrid utilization of WBG devices and Si-based devices to achieve a tradeoff between the performance and cost.To summarize the current research on WBG/Si hybrid applications,the issues mentioned above with representative research approaches,results,and characteristics,are systematically reviewed.Finally,the current research on WBG/Si hybrid applications and their future trends are discussed.展开更多
SiC Hybrid switch(HyS)combines low conduction loss of Si IGBT and low switching loss of SiC MOSFET,and the cost is closer to that of Si IGBT.The promising high performances of HyS will bring considerable achievement i...SiC Hybrid switch(HyS)combines low conduction loss of Si IGBT and low switching loss of SiC MOSFET,and the cost is closer to that of Si IGBT.The promising high performances of HyS will bring considerable achievement in terms of enhancing power density of a converter system.By reviewing the gate drive pattern,gate drive hardware,current sharing,module design,converter design,and cost,this paper introduces state-of-the-art SiC HyS.展开更多
基金Supported by the National Natural Science Foundation of China(51677054)the 16th Six Talent Peaks Project in Jiangsu Province(2019-TD-XNY-001).
文摘In recent years,next-generation power semiconductor devices,represented by silicon carbide(SiC)and gallium nitride(GaN),have gradually emerged.Because wide-bandgap(WBG)devices have better electrical characteristics than those of silicon(Si)based devices,they have attracted increased attention both from academic researchers and industrial engineers.Employing WBG devices will further improve the efficiency and power density of power converters.However,the current price of WBG devices remains extremely high.Thus,some researches have focused on the hybrid utilization of WBG devices and Si-based devices to achieve a tradeoff between the performance and cost.To summarize the current research on WBG/Si hybrid applications,the issues mentioned above with representative research approaches,results,and characteristics,are systematically reviewed.Finally,the current research on WBG/Si hybrid applications and their future trends are discussed.
基金Supported by the National Key Research and Development Program of China(2016YFB0100600)the Key Program of Bureau of Frontier Sciences and Education,and Chinese Academy of Sciences(QYZDBSSW-JSC044).
文摘SiC Hybrid switch(HyS)combines low conduction loss of Si IGBT and low switching loss of SiC MOSFET,and the cost is closer to that of Si IGBT.The promising high performances of HyS will bring considerable achievement in terms of enhancing power density of a converter system.By reviewing the gate drive pattern,gate drive hardware,current sharing,module design,converter design,and cost,this paper introduces state-of-the-art SiC HyS.
