The residual electrically active defects in(4×10<sup>12</sup>cm<sup>-2</sup>（30KeV）+5×10<sup>12</sup>cm<sup>-2</sup>（130KeV）)si-implanted LEC undoped si-Ga...The residual electrically active defects in(4×10<sup>12</sup>cm<sup>-2</sup>（30KeV）+5×10<sup>12</sup>cm<sup>-2</sup>（130KeV）)si-implanted LEC undoped si-GaAs activated by two-step rapid thermal annealing（RTA）LABELED AS 970℃（9S）+750℃（12S）have been investigated with deep level transient spec-troscopy（DLTS）.Two electron traps ET<sub>1</sub>(E<sub>c</sub>-0.53eV,σ<sub>n</sub>=2.3×10<sup>-16</sup>cm<sup>2</sup>)and ET<sub>2</sub>（E<sub>c</sub>-0.81eV,σ<sub>n</sub>=9.7×10（-13）cm<sup>2</sup>）are detected.Furthermore,the noticeable variations of trap’s con-centration and energy level in the forbidden gap with the depth profile of defects induced by ion im-plantation and RTA process have also been observed.The[As<sub>i</sub>·V<sub>As</sub>·As<sub>Ga</sub>]and[V<sub>As</sub>·As<sub>i</sub>·V<sub>Ga</sub>·As<sub>Ga</sub>]are proposed to be the possible atomic configurations of ET<sub>1</sub> and ET<sub>2</sub>,respectively to explaintheir RTA behaviors.展开更多
文摘The residual electrically active defects in(4×10<sup>12</sup>cm<sup>-2</sup>（30KeV）+5×10<sup>12</sup>cm<sup>-2</sup>（130KeV）)si-implanted LEC undoped si-GaAs activated by two-step rapid thermal annealing（RTA）LABELED AS 970℃（9S）+750℃（12S）have been investigated with deep level transient spec-troscopy（DLTS）.Two electron traps ET<sub>1</sub>(E<sub>c</sub>-0.53eV,σ<sub>n</sub>=2.3×10<sup>-16</sup>cm<sup>2</sup>)and ET<sub>2</sub>（E<sub>c</sub>-0.81eV,σ<sub>n</sub>=9.7×10（-13）cm<sup>2</sup>）are detected.Furthermore,the noticeable variations of trap’s con-centration and energy level in the forbidden gap with the depth profile of defects induced by ion im-plantation and RTA process have also been observed.The[As<sub>i</sub>·V<sub>As</sub>·As<sub>Ga</sub>]and[V<sub>As</sub>·As<sub>i</sub>·V<sub>Ga</sub>·As<sub>Ga</sub>]are proposed to be the possible atomic configurations of ET<sub>1</sub> and ET<sub>2</sub>,respectively to explaintheir RTA behaviors.
