The effects of Si content on the microstructure and yield strength of Al-(1.44-12.40)Si-0.7 Mg(wt.%)alloy sheets under the T4 condition were systematically studied via laser scanning confocal microscopy(LSCM),DSC,TEM ...The effects of Si content on the microstructure and yield strength of Al-(1.44-12.40)Si-0.7 Mg(wt.%)alloy sheets under the T4 condition were systematically studied via laser scanning confocal microscopy(LSCM),DSC,TEM and tensile tests.The results show that the recrystallization grain of the alloy sheets becomes more refined with an increase in Si content.When the Si content increases from 1.44 to 12.4 wt.%,the grain size of the alloy sheets decreases from approximately 47 to 10μm.Further,with an increase in Si content,the volume fraction of the GP zones in the matrix increases slightly.Based on the existing model,a yield strength model for alloy sheets was proposed.The predicted results are in good agreement with the actual experimental results and reveal the strengthening mechanisms of the Al-(1.44-12.40)Si-0.7 Mg alloy sheets under the T4 condition and how they are influenced by the Si content.展开更多
The relationship between structure and electronic properties of phosphorus-doped hydrogenated amorphous silicon(a-Si:H) thin films was investigated.Samples with different features were prepared by plasma enhanced chem...The relationship between structure and electronic properties of phosphorus-doped hydrogenated amorphous silicon(a-Si:H) thin films was investigated.Samples with different features were prepared by plasma enhanced chemical vapor deposition(PECVD) at various substrate temperatures.Raman spectroscopy and Fourier transform infrared(FTIR) spectroscopy were used to evaluate the structural evolution,meanwhile,electronic-spin resonance(ESR) and optical measurement were applied to explore the electronic properties of P-doped a-Si:H thin films.The results revealed that the changes in materials structure affect directly the electronic properties and the doping efficiency of dopant.展开更多
基金Project(2016YFB0300801)supported by the National Key Research and Development Program of ChinaProject(51871043)supported by the National Natural Science Foundation of ChinaProject(N180212010)supported by the Fundamental Research Funds for the Central Universities of China。
文摘The effects of Si content on the microstructure and yield strength of Al-(1.44-12.40)Si-0.7 Mg(wt.%)alloy sheets under the T4 condition were systematically studied via laser scanning confocal microscopy(LSCM),DSC,TEM and tensile tests.The results show that the recrystallization grain of the alloy sheets becomes more refined with an increase in Si content.When the Si content increases from 1.44 to 12.4 wt.%,the grain size of the alloy sheets decreases from approximately 47 to 10μm.Further,with an increase in Si content,the volume fraction of the GP zones in the matrix increases slightly.Based on the existing model,a yield strength model for alloy sheets was proposed.The predicted results are in good agreement with the actual experimental results and reveal the strengthening mechanisms of the Al-(1.44-12.40)Si-0.7 Mg alloy sheets under the T4 condition and how they are influenced by the Si content.
基金supported by the Fundamental Research Funds for the Central Universities
文摘The relationship between structure and electronic properties of phosphorus-doped hydrogenated amorphous silicon(a-Si:H) thin films was investigated.Samples with different features were prepared by plasma enhanced chemical vapor deposition(PECVD) at various substrate temperatures.Raman spectroscopy and Fourier transform infrared(FTIR) spectroscopy were used to evaluate the structural evolution,meanwhile,electronic-spin resonance(ESR) and optical measurement were applied to explore the electronic properties of P-doped a-Si:H thin films.The results revealed that the changes in materials structure affect directly the electronic properties and the doping efficiency of dopant.
