Si基芯片光互连研究进展

综述了近年来Si基光互连,尤其是和微电子工艺兼容程度较高的芯片间和芯片内的光互连的进展。Luxtera公司已经率先实现了除光源外的所有光子器件的单片集成,IBM也提出并开始实施微电子学领域的片内光互连的技术方案,但Si基光互连大部分还停留在各构建单元器件性能提高的阶段,例如Si基发光、Si波导、Si波导耦合器、Si基调制器及光开关、Si基探测器以及用于光波导器件阵列的WDM技术。此外,还对Si基光源、光纤耦合、偏振敏感性以及光子器件的热稳定性提出了看法。总之,随着各种构建单元器件的综合性能、CMOS工艺兼容度、制备成品率的提高以及光电融合单片集成工艺的突破,光互连最终会成为现实,并引发微电子技术和IC行业的下一场革命。

Cu基SAPO-34催化剂的制备及其脱硝性能研究

以吗啉为模板剂,基于原位水热法制了备Cu-SAPO-34催化剂,在催化剂评价装置上探究了的分子筛催化剂催化还原NO的能力。通过XRD、SEM、NH_(3)-TPD和H_(2)-TPR等分析手段测试了不同摩尔比的Si源量对Cu-SAPO-34的微观形貌、晶格结构和催化活性的影响。结果表明,Cu-SAPO-34分子筛颗粒的晶粒为均匀规整的立方结构,颗粒的尺寸在15~30μm之间,过量或过少的Si源摩尔比都会影响Cu-SAPO-34催化剂的结晶度。当温度在250℃时,Si源摩尔比为0.3的Cu-SAPO-34催化剂的脱硝活性达到了最大值86%;当温度超过300℃后,Cu-SAPO-34催化剂脱硝活性开始降低;当温度达到600℃时,Si源摩尔比为0.3的Cu-SAPO-34保持率达到81.4%,Cu-SAPO-34催化剂具有优异的耐高温性和宽的工作温度。总耗氢量随着Si源摩尔比的增大而先增大后减小,Si源摩尔比为0.3的Cu-SAPO-34催化剂总耗氢量达到最大值为415.61 mmol/g,总NH_(3)脱附量达到最高为1.56 mmol/g。综合可知,Si源摩尔比为0.3的Cu-SAPO-34具有最高的活性。

Power Management of Parallel Hybrid Electric Power Train

This paper presents an integrated and detailed procedure to improve tile power management feature implemented in the integrated starter-generator （ISG） parallel hybrid electric vehicle. First, the configuration of the single-shaft ISG hybrid vehicle model established in MATLAB-Simulink environment is given. The vehicle model then is validated by comparing the experimental measurements and the simulation predictions of the traditional vehicle. The baseline rule based control strategy and the optimal control strategy using the dynamic programming （DP） algorithm are introduced. Finally, a suboptimal control strategy which employs the new control rules extracted from the optimal control strategy is designed with the remarkable fuel consumption performance.