We investigated the interfacial effects on magnetic properties in Co2Fe(Al,Si)/Ge (CFAS/Ge) and CFAS/MgO/Ge systems to demonstrate the effects of the interface structure on magnetic properties. CFAS and CFAS/MgO were ...We investigated the interfacial effects on magnetic properties in Co2Fe(Al,Si)/Ge (CFAS/Ge) and CFAS/MgO/Ge systems to demonstrate the effects of the interface structure on magnetic properties. CFAS and CFAS/MgO were deposited on the i-Ge(111) substrate. In-situ reflection high energy electron diffraction (RHEED) patterns showed epitaxially grown CFAS and MgO on Ge(111). According to the X-ray diffraction (XRD)φ-scan of CFAS(220), we determined that the crystallographic orientation relationships were CFAS(111)<-110 >//Ge(111)<-110 > and CFAS(111)<-110 >//MgO(111)<-110 > Ge(111)<-110 >. The magnetic properties were measured by the vibrating sample magnetometer (VSM) and the saturation magnetization Ms value of CFAS with 2-nm thick MgO reached the value of L21 ordered one. A uniaxial magnetic anisotropy behavior was observed both in CFAS/Ge and CFAS/MgO/Ge structures after annealing. We confirmed the behavior did not only originate from the CFAS/Ge interface but also CFAS/MgO and the ordering structure.展开更多
基金supported by JSPS KAKENHI under Grant No.15H05699
文摘We investigated the interfacial effects on magnetic properties in Co2Fe(Al,Si)/Ge (CFAS/Ge) and CFAS/MgO/Ge systems to demonstrate the effects of the interface structure on magnetic properties. CFAS and CFAS/MgO were deposited on the i-Ge(111) substrate. In-situ reflection high energy electron diffraction (RHEED) patterns showed epitaxially grown CFAS and MgO on Ge(111). According to the X-ray diffraction (XRD)φ-scan of CFAS(220), we determined that the crystallographic orientation relationships were CFAS(111)<-110 >//Ge(111)<-110 > and CFAS(111)<-110 >//MgO(111)<-110 > Ge(111)<-110 >. The magnetic properties were measured by the vibrating sample magnetometer (VSM) and the saturation magnetization Ms value of CFAS with 2-nm thick MgO reached the value of L21 ordered one. A uniaxial magnetic anisotropy behavior was observed both in CFAS/Ge and CFAS/MgO/Ge structures after annealing. We confirmed the behavior did not only originate from the CFAS/Ge interface but also CFAS/MgO and the ordering structure.
基金the financial support from the Fundamental Research Program of Shanxi Province,China(No.202203021211130)the National Natural Science Foundation of China(Nos.51801132,52075359)。
基金financially supported by the National Key Research and Development Program of China (No. 2020YFA0405903)the National Natural Science Foundation of China (Nos. 52001159, 52101141)+1 种基金the Natural Science Foundation of Jiangsu ProvinceChina (No. BK20202010)。
