Shortening the distance between the depletion region and the electrodes to reduce the trapped probability of carriers is a useful approach for improving the performance of heterojunction.The CdS/Si nanofilm heterojunc...Shortening the distance between the depletion region and the electrodes to reduce the trapped probability of carriers is a useful approach for improving the performance of heterojunction.The CdS/Si nanofilm heterojunctions are fabricated by using the radio frequency magnetron sputtering method to deposit the amorphous silicon nanofilms and Cd S nanofilms on the ITO glass in turn.The relation of current density to applied voltage(I-V)shows the obvious rectification effect.From the analysis of the double logarithm I-V curve it follows that below~2.73 V the electron behaviors obey the Ohmic mechanism and above~2.73 V the electron behaviors conform to the space charge limited current(SCLC)mechanism.In the SCLC region part of the traps between the Fermi level and conduction band are occupied,and with the increase of voltage most of the traps are occupied.It is believed that Cd S/Si nanofilm heterojunction is a potential candidate in the field of nano electronic and optoelectronic devices by optimizing its fabricating procedure.展开更多
Structure and polarity of the Si C single crystal have been analyzed with the four- circle X- ray diffraction method by a double- crystal diffractom eter.The hexagonal{ 10 15 } pole figure shows that this Si C sam pl...Structure and polarity of the Si C single crystal have been analyzed with the four- circle X- ray diffraction method by a double- crystal diffractom eter.The hexagonal{ 10 15 } pole figure shows that this Si C sam ple has a6 H modification.The difference between the integrated intensities m easured byω scan in the triple- axis diffraction set- up finds some convincing evidence that the surface is either a Si- terminated face or C- terminated face.The experi- mental ratios of| F( 0 0 0 L) | 2 / | F( 0 0 0 L) | 2 are in good agreem entwith the calculated ones after the dispersion cor- rections to the atomic scattering factors( L=6 ,12 and18,respectively) .Thus,this m easurem ent technique is con- venient for the application of the materials with remarkable surface polarity.展开更多
基金Project supported by the Natural Science Foundation of Henan Province,China(Grant No.202300410304)the Key Research Project for Science and Technology of the Education Department of Henan Province,China(Grant No.21A140021)。
文摘Shortening the distance between the depletion region and the electrodes to reduce the trapped probability of carriers is a useful approach for improving the performance of heterojunction.The CdS/Si nanofilm heterojunctions are fabricated by using the radio frequency magnetron sputtering method to deposit the amorphous silicon nanofilms and Cd S nanofilms on the ITO glass in turn.The relation of current density to applied voltage(I-V)shows the obvious rectification effect.From the analysis of the double logarithm I-V curve it follows that below~2.73 V the electron behaviors obey the Ohmic mechanism and above~2.73 V the electron behaviors conform to the space charge limited current(SCLC)mechanism.In the SCLC region part of the traps between the Fermi level and conduction band are occupied,and with the increase of voltage most of the traps are occupied.It is believed that Cd S/Si nanofilm heterojunction is a potential candidate in the field of nano electronic and optoelectronic devices by optimizing its fabricating procedure.
文摘Structure and polarity of the Si C single crystal have been analyzed with the four- circle X- ray diffraction method by a double- crystal diffractom eter.The hexagonal{ 10 15 } pole figure shows that this Si C sam ple has a6 H modification.The difference between the integrated intensities m easured byω scan in the triple- axis diffraction set- up finds some convincing evidence that the surface is either a Si- terminated face or C- terminated face.The experi- mental ratios of| F( 0 0 0 L) | 2 / | F( 0 0 0 L) | 2 are in good agreem entwith the calculated ones after the dispersion cor- rections to the atomic scattering factors( L=6 ,12 and18,respectively) .Thus,this m easurem ent technique is con- venient for the application of the materials with remarkable surface polarity.
