Peculiar Nonlinear Depletion in Double-Layered Gated Si-δ-Doped GaAs

The low-temperature measurement of Hall effect of the two-dimensional electron system in a double-layered gated Si-δ-doped GaAs is presented.A complex peculiar nonlinear dependence of the depletion on gate voltage is observed.The nonlinearity is also explained on the basis of the assumption that the double-capacity model consists of two δ-doped two-dimensional electron layers and a metallic gate,and the experimental result that the electron mobility is linear with the electron density on a log-log scale.

Self-assembled S-scheme In_(2.77)S_(4)/K^(+)-doped g-C_(3)N_(4)photocatalyst with selective O_(2)reduction pathway for efficient H_(2)O_(2)production using water and air

The development of an efficient artificial H_(2)O_(2)photosynthesis system is a challenging work using H_(2)O and O_(2)as starting materials.Herein,3D In2.77S_(4)nanoflower precursor was in-situ deposited on K^(+)-doped g-C_(3)N_(4)(KCN)nanosheets using a solvothermal method,then In2.77S_(4)/KCN(IS/KCN)het-erojunction with an intimate interface was obtained after a calcination process.The investigation shows that the photocatalytic H_(2)O_(2)production rate of 50IS/KCN can reach up to 1.36 mmol g^(-1)h^(-1)without any sacrificial reagents under visible light irradiation,which is 9.2 times and 4.1 times higher than that of KCN and In2.77S_(4),respectively.The enhanced activity of the above composite can be mainly attributed to the S-scheme charge transfer route between KCN and In2.77S_(4)according to density functional theory calculations,electron paramagnetic resonance and free radical capture tests,leading to an expanded light response range and rapid charge separation at their interface,as well as preserving the active electrons and holes for H_(2)O_(2)production.Besides,the unique 3D nanostructure and surface hydrophobicity of IS/KCN facilitate the diffusion and transportation of O_(2)around the active centers,the energy barriers of O_(2)protonation and H_(2)O_(2)desorption steps are ef-fectively reduced over the composite.In addition,this system also exhibits excellent light harvesting ability and stability.This work provides a potential strategy to explore a sustainable H_(2)O_(2)photo-synthesis pathway through the design of heterojunctions with intimate interfaces and desired reac-tion thermodynamics and kinetics.

First-Principles Investigation of Charge Transfer Mechanism of B-Doped 3C-SiC Semiconductor Material

This study delves into the charge transfer mechanism of boron (B)-doped 3C-SiC through first-principles investigations. We explore the effects of B doping on the electronic properties of 3C-SiC, focusing on a 12.5% impurity concentration. Our comprehensive analysis encompasses structural properties, electronic band structures, and charge density distributions. The optimized lattice constant and band gap energy of 3C-SiC were found to be 4.373 Å and 1.36 eV respectively, which is in agreement with previous research (Bui, 2012;Muchiri et al., 2018). Our results show that B doping narrows the band gap, enhances electrical conductivity, and influences charge transfer interactions. The charge density analysis reveals substantial interactions between B dopants and surrounding carbon atoms. This work not only enhances our understanding of the material’s electronic properties, but also highlights the importance of charge density analysis for characterizing charge transfer mechanisms and their implications in the 3C-SiC semiconductors.

Ag掺杂Mo-12Si-8.5B合金在25~600℃的摩擦学行为

本文中采用放电等离子烧结法制备了Mo-12Si-8.5B和Mo-12Si-8.5B-10%Ag这2种合金,通过高温真空摩擦磨损试验仪测试了2种合金与Al_(2)O_(3)摩擦副在25~600℃间的干摩擦学性能.结果表明:与Mo-12Si-8.5B合金相比,在25~600℃区间Mo-12Si-8.5B-10%Ag合金表现出更低的摩擦系数和磨损率.在600℃时,Mo-12Si-8.5B-10%Ag合金的摩擦系数和磨损率均可达到最小值,其值分别为0.41和1.14×10^(-5)mm^(3)/(N·m),此时Mo-12Si-8.5B-10%Ag合金的干摩擦性能表现最佳,这与Mo-12Si-8.5B-10%Ag合金磨损表面的MoO_(3)、SiO_(2)和Ag_(2)MoO_(4)等润滑相的存在及Ag在25~600℃范围内起到的润滑效果有关.此外,在25~200℃区间,Mo-12Si-8.5B-10%Ag合金的磨损机制主要为黏着磨损和剥层磨损,在400~600℃范围内,则以黏着磨损和氧化磨损为主.

热挤压对快速凝固Al-Si-Fe-Cu-Mg合金显微组织及性能的影响

采用单辊旋淬法制备了快速凝固Al-20Si-5Fe-Cu-Mg合金,采用了SEM对其进行观察分析。结果表明,快速凝固能够极大细化Al-20Si-5Fe-Cu-Mg合金组织,抑制Si相及β-Fe相的析出长大,且组织的细化程度呈梯度分布。对快速凝固Al-20Si-5Fe-Cu-Mg合金进行了不同工艺参数的热挤压实验。结果表明,粉末包套热挤压工艺能够使快速凝固Al-20Si-5Fe-Cu-Mg带材合金致密化,当挤压温度为400℃、挤压比为1∶16时,合金获得了较优异的力学性能,其屈服强度和抗拉强度分别达到了456 MPa和805 MPa,压缩率为9.3%。

Fabrication of Gd_(2)O_(3)-doped CeO_(2)thin films through DC reactive sputtering and their application in solid oxide fuel cells

Physical vapor deposition(PVD)can be used to produce high-quality Gd_(2)O_(3)-doped CeO2(GDC)films.Among various PVD methods,reactive sputtering provides unique benefits,such as high deposition rates and easy upscaling for industrial applications.GDC thin films were successfully fabricated through reactive sputtering using a Gd_(0.2)Ce_(0.8)(at%)metallic target,and their application in solid oxide fuel cells,such as buffer layers between yttria-stabilized zirconia(YSZ)/La0.6Sr0.4Co0.2Fe0.8O_(3−δ)and as sublayers in the steel/coating system,was evaluated.First,the direct current(DC)reactive-sputtering behavior of the GdCe metallic target was determined.Then,the GDC films were deposited on NiO-YSZ/YSZ half-cells to investigate the influence of oxygen flow rate on the quality of annealed GDC films.The results demonstrated that reactive sputtering can be used to prepare thin and dense GDC buffer layers without high-temperature sintering.Furthermore,the cells with a sputtered GDC buffer layer showed better electrochemical performance than those with a screen-printed GDC buffer layer.In addition,the insertion of a GDC sublayer between the SUS441 interconnects and the Mn-Co spinel coatings contributed to the reduction of the oxidation rate for SUS441 at operating temperatures,according to the area-specific resistance tests.

基于CAFE模拟Cu-3Ni-0.96Si-0.15Mg合金的铸锭凝固组织演变

采用ProCast软件中CAFE(元胞自动机有限元法)模型模拟计算了Cu-3Ni-0.96Si-0.15Mg铸锭凝固过程中枝晶生长组织演变过程,并将预测的凝固组织与实验微观组织进行了对比,验证了模型的准确性。结果表明,模拟预测的凝固组织与实验基本一致,说明该模型可以很好地模拟实际凝固组织。然后,利用此模型模拟研究了过热度以及形核密度对铸锭凝固组织的影响。结果表明:增大形核率以及适当降低浇注温度可以明显细化晶粒,提高等轴晶区的占比,当过热度为20℃,最大形核密度为1×10^(9)m^(-3)时,铸锭凝固组织几乎为等轴晶组织,其等轴晶区占比达到92.34%。

孔隙和α-Al(Fe/Mn)Si相对高压压铸Al-7Si-0.2Mg合金塑性的影响

采用高压压铸工艺制备两批次不同尺寸的Al-7Si-0.2Mg(质量分数,%)合金,获得显微组织和孔隙非均匀分布的薄壁铸件,并对比研究孔隙和显微组织对铸态合金塑性的影响。结果表明:不同铸件和不同位置样品的伸长率有较大波动(9.7%~17.9%)。当合金存在大面积孔隙时,有效承载面积减小导致由孔隙产生的应力集中使合金伸长率显著降低。当合金只存在小面积孔隙时,塑性变形过程中合金中的α-Al(Fe/Mn)Si相先于共晶硅相发生脆性断裂,α-Al(Fe/Mn)Si相的数量密度对伸长率的波动起主导作用,具有高数量密度α-Al(Fe/Mn)Si相试样的伸长率显著降低。此外,局部较高的冷却速率导致铸件α-Al(Fe/Mn)Si相数量密度的增加。

Al-12.0Si-4.0Cu-0.7Mg-1.5Ni合金固溶处理工艺研究

对铸态Al-12.0Si-4.0Cu-0.7Mg-1.5Ni合金进行了双级固溶+时效处理,采用SEM、XRD、硬度测试等研究了双级固溶中第二级固溶温度和时间对铸态合金组织与硬度的影响。结果表明:铸态Al-12.0Si-4.0Cu-0.7Mg-1.5Ni合金组织主要由α-Al固溶体、块状初生Si相、针状共晶Si相以及网状第二相组成。经过双级固溶处理后,合金中块状初生Si相明显钝化,共晶Si相明显细化,网状第二相也显著碎化。490℃×2 h+525℃×4 h双级固溶处理合金中网状相基本完全碎化,共晶Si相最为细小。随着双级固溶中第二级固溶温度的提高,固溶时间的延长,T6态Al-12.0Si-4.0Cu-0.7Mg-1.5Ni合金的硬度先升高后降低,490℃×2 h+525℃×4 h双级固溶+180℃×6 h时效处理合金的硬度最高,达到88.2 HRB。

Notch-δ-doped InP Gunn diodes for low-THz band applications

The viability of the indium phosphide(InP)Gunn diode as a source for low-THz band applications is analyzed based on a notch-δ-doped structure using the Monte Carlo modeling.The presence of theδ-doped layer could enhance the current harmonic amplitude(A0)and the fundamental operating frequency(f0)of the InP Gunn diode beyond 300 GHz as compared with the conventional notch-doped structure for a 600-nm length device.With its superior electron transport properties,the notch-δ-doped InP Gunn diodes outperform the corresponding gallium arsenide(GaAs)diodes with up to 1.35 times higher in f0 and 2.4 times larger in A0 under DC biases.An optimized InP notch-δ-doped structure is estimated to be capable of generating 0.32-W radio-frequency(RF)power at 361 GHz.The Monte Carlo simulations predict a reduction of 44%in RF power,when the device temperature is increased from 300 K to 500 K;however,its operating frequency lies at 280 GHz which is within the low-THz band.This shows that the notch-δ-doped InP Gunn diode is a highly promising signal source for low-THz sensors,which are in a high demand in the autonomous vehicle industry.

Mg对Al-22Si-10Ni合金组织和热学性能的影响

Al-22Si-10Ni合金具有较高的导热性和较低的热膨胀特性,但硬度偏低,对其进行Mg合金化,研究Mg对该合金凝固组织和热学性能的影响。研究显示,Mg的加入主要影响合金的末期凝固进程,合金凝固末期反应由Al-Si-Al3Ni三元共晶反应向Al-Si-Mg2Si三元共晶反应转变;热处理促进Mg_(2)Si析出,少量Mg加入后Al-22Si-10Ni合金的热导率小幅上升,继续添加Mg后,热导率出现下降;Mg对合金热膨胀系数影响较小,可显著提升合金的硬度。Al-22Si-10Ni-0.5Mg合金表现出优异的综合性能,其室温热导率130.3 W/(m·K),25~100℃范围内平均热膨胀系数为13×10^(-6)/K,硬度达到HV144,性能较为接近喷射沉积制备的高含量Al-50Si合金,具有成为电子封装用材料的潜能。

固溶处理时间对铸造Al-Si-Mg合金低温力学性能的影响

对铸造Al-7Si-0.3Mg合金进行了20℃、-20℃和-60℃的拉伸试验,研究了固溶时间对其力学性能和显微组织的影响,并分析了Si相对断裂行为的影响及其作用机理。结果表明,随着固溶时间的延长,合金在20℃、-20℃和-60℃下屈服强度、抗拉强度和伸长率都呈先增加后降低的趋势,在固溶时间为10 h时取得最大值。随着固溶时间的延长,合金中Si相的尺寸和长宽比有所减小,在固溶时间为10 h时,合金中尺寸较小的Si相主要呈颗粒状,继续延长固溶时间至15 h时,Si相的尺寸和长宽比增加。随着试验温度的降低,Si相附近的滑移带数量呈现逐渐减少的趋势,较低温度下合金断口附近出现了较多的断裂Si相,但是相对而言,固溶时间为10 h的断裂Si相处的裂纹较小,且断口以小解理平面和韧窝为主,韧性相对未固溶时更好。

过渡元素Mn、Cr、Zr对Al-7Si-0.35Mg铸造合金组织和力学性能的影响

本试验主要研究微量过渡元素Mn、Cr、Zr对Al-7Si-0.35Mg铸造合金组织和力学性能影响.根据相图和"污泥"形成的条件,初步确定过渡族元素的添加量.采用Jmat Pro模拟不同成分合金的凝固过程,并与实际凝固组织进行对比.结果表明,添加Mn、Cr基本消除了针状β-Al_(5)FeSi相,将该相转变为汉字状α-Al(Fe,Mn,Cr)Si相;添加Zr元素不改变初生Fe相的类型和形貌,使合金中出现少量针状Al-Si-Zr-Ti相,对合金的塑性产生不利的影响;Mn、Cr、Zr单独或组合添加后,对合金的共晶区和共晶硅面积分数基本没有影响;Mn、Cr复合添加和Mn、Cr、Zr复合添加可以使合金获得良好的力学性能.

人工时效处理对体育器材焊接用Al-6Si-2Cu-Fe合金组织与性能的影响

Al-Si-Cu铝合金广泛应用于体育器材中取代铁制零件,该合金的力学特性是其应用中重要的参考依据,其中Al-6Si-2Cu-Fe作为代表合金之一,不同的热处理状态会显著影响合金的显微组织与力学性能,为此,文中研究了不同人工时效处理方式对Al-6Si-2Cu-Fe合金的影响。按先后顺序对合金进行了3种不同的时效处理,分别是预时效、单级时效和双级时效。通过硬度测试、拉伸测试、冲击试验、金相观察和扫描电子显微镜能谱分析进行表征。结果表明,由于时效处理的不同,相组成和形态微结构存在差异,每种处理的差异可以在析出相的显微组织形态中观察到,各析出相包括弥散的、圆形和针状等形态,这些相结构显著影响了合金的力学性能。测试结果显示,单级时效处理获得了最高的硬度和抗拉强度,其分别为160.16 HB和201.45 MPa;预时效处理的冲击韧性最高,其吸收能量为18.55 J。

Mo-12Si-8.5B/SiC配对副从室温到1000℃的摩擦学性能

采用放电等离子烧结法制备了Mo-12Si-8.5B合金,通过高温真空摩擦磨损试验仪测试Mo-12Si-8.5B合金与SiC配对副在25~1000℃区间内的干摩擦学性能。结果表明:温度对Mo-12Si-8.5B/SiC配对副的摩擦系数和磨损率影响较大,其原因与在不同温度下SiC表面的分解、碳的石墨化以及摩擦副表面生成的氧化物共同作用有关,在600℃时Mo-12Si-8.5B合金的摩擦系数达到最小值,为0.36,在800℃时磨损率最小,为0.74×10^(-6)mm^(3)/(N·m)。此外,在25~400℃范围内,Mo-12Si-8.5B合金的磨损机制主要为粘着磨损和剥层磨损,在高温600~1000℃范围内,则以粘着磨损和氧化磨损为主。

Preparation and photoelectric properties of Ho^(3+)-doped titanium dioxide nanowire downconversion photoanode

Ho^3＋-doped titanium dioxide（TiO2：Ho^3＋） downconversion（DC） nanowires were synthesized through a simple hydrothermal method followed by a subsequent calcination process after being immersed in Ho（NO3）3 aqueous solution. Moreover, TiO2：Ho^3＋ nanowires（HTNWs） were used as the photoanode in dye-sensitized solar cells（DSSCs） to investigate their photoelectric properties. Scanning electron microscopy（SEM） and X-ray diffraction（XRD） were used to characterize the morphology and structure of the material, respectively. The photofluorescence and ultraviolet-visible absorption spectra of HTNWs reveal a DC from the near and middle ultraviolet light to visible light which matches the strong absorbed region of the N719 dye. Compared with the pure TNW photoanode, HTNWs DC photoanodes show greater photovoltaic efficiency. The photovoltaic conversion efficiency（η） of the DSSCs with HTNWs photoanode doped with 4% Ho2O3（mass fraction） is two times that with pure TNW photoanode. This enhancement could be attributed to HTNWs which could extend the spectral response range of DSSCs to the near and middle ultraviolet region and increase the short-circuit current density（Jsc） of DSSCs, thus leading to the enhancement of photovoltaic conversion efficiency.

Preparation and characterization of Eu^(3+)-doped CaCO_3 phosphor by microwave synthesis

A Eu^3＋-doped CaCO3 phosphor with red emission was prepared by microwave synthesis. The scanning electron microscopy （SEM） image and laser particle size analysis show that the CaCO3：Eu^3＋ particles are needle-like in the length range of 5.0-10.0 μm. The results of X-ray diffraction （XRD） analysis, Fourier transform infrared spectroscopy （FT-IR）, and Raman spectroscopy indicate that pure aragonite CaCO3：Eu^3＋ is prepared using microwave irradiation and the Eu^3＋ ion as a luminescence center inhabits the site of Ca^2＋. The photoluminescence excitation （PLE） spectrum shows that the strong broad band at around 270 nm and weak sharp lines in 300-550 nm are assigned to the charge transfer band of Eu^3＋-O^2- and intra-configurational 4f-4f transitions of Eu^3＋, respectively. The photoluminescence （PL） spectrum implies that the red luminescence can be attributed to the transitions from the ^5D0 excited level to the ^7FJ （J = 0, 1, 2, 3, 4） levels of Eu^3＋ ions with the mainly electric dipole transition ^5D0 → ^7F2 （614 and 620 nm）, and the Eu^3＋ ions prefer to occupy the low symmetric site in the crystal lattice.

Electrochemical performance of Ti^(4+)-doped LiFePO_4 synthesized by co-precipitation and post-sintering method

Ti4+-mixed FePO4·xH2O precursor was prepared by co-precipitation method,with which Ti4+ cations were added in the process of preparing FePO4·xH2O to pursue an effective and homogenous doping way.Ti4+-doped LiFePO4 was prepared by an ambient-reduction and post-sintering method using the as-prepared precursor,Li2CO3 and oxalic acid as raw materials.The samples were characterized by scanning electron microscopy (SEM),X-ray diffractometry (XRD),electrochemical impedance spectroscopy (EIS),and electrochemical charge/discharge test.Effects of Ti4+-doping and sintering temperature on the physical and electrochemical performance of LiFePO4 powders were investigated.It is noted that Ti4+-doping can improve the electrochemical performance of LiFePO4 remarkably.The Ti4+-doped sample sintered at 600 ℃ delivers an initial discharge capacity of 150,130 and 125 mA·h/g with 0.1C,1C and 2C rates,respectively,without fading after 40 cycles.

Effect of defect complex on magnetic properties of (Fe, Mn)-doped ZnO thin films

We have observed room temperature ferromagnetism in Mn-doped and (Fe, Mn)-codoped ZnO thin films grown under different oxygen partial pressures by pulsed laser deposition. The X-ray diffraction and optical transmission spectra studies demonstrate the natural incorporation of Fe and Mn cations into wurtzite ZnO lattices. The effects of transition metal doping and defects on the magnetic properties was investigated. It is found that room temperature ferromagnetism is sensitive to oxygen vacancy and Zn vacancy. The absence of ferromagnetism in pure ZnO films grown under different oxygen partial pressures reveals that the transition metal ions should also play an important role in inducing the ferromagnetism.

Green and red up-conversion emissions and thermometric application of Er^(3+) -doped silicate glass

The green and red up-conversion emissions centred at about 534, 549 and 663 nm of wavelength, corresponding respectively to the ^2H11/2 → ^4I15/2, ^4S3/2 → ^4I15/2 and ^4F9/2 → ^4I15/2 transitions of Er^3＋ ions, have been observed for the Er^3＋-doped silicate glass excited by a 978 nm semiconductor laser beam. Excitation power dependent behaviour of the up-conversion emission intensity indicates that a two-photon absorption up-conversion process is responsible for the green and red up-conversion emissions. The temperature dependence of the green up-conversion emissions is also studied in a temperature range of 296-673 K, which shows that Er^3＋-doped silicate glass can be used as a sensor in high-temperature measurement.