In this paper, the electrical parameters of Au/n-Si （MS） and Au/Si3N4/n-Si （MIS） Schottky diodes are obtained from the forward bias current-voltage （I-V） and capacitance-voltage （C-V） measurements at room temp...In this paper, the electrical parameters of Au/n-Si （MS） and Au/Si3N4/n-Si （MIS） Schottky diodes are obtained from the forward bias current-voltage （I-V） and capacitance-voltage （C-V） measurements at room temperature. Experimental results show that the rectifying ratios of the MS and MIS diodes at ± 5 V are found to be 1.25 ×103 and 1.27 ×104, respectively. The main electrical parameters of the MS and MIS diodes, such as the zero-bias barrier height （rbBo） and ideality factor （n）, are calculated to be 0.51 eV （I-V）, 0.53 eV （C-V）, and 4.43, and 0.65 eV （I-V）, 0.70 eV （C-V）, and 3.44, respectively. In addition, the energy density distribution profile of the interface states （Nss） is obtained from the forward bias I-V, and the series resistance （Rs） values for the two diodes are calculated from Cheung＇s method and Ohm＇s law.展开更多
We put forward an n-ZnO/p-Si heterojunction solar cell model based on AFORS-HET simulations and provide experimental support in this article.ZnO：B（B-doped ZnO） thin films deposited by metal-organic chemical vapor d...We put forward an n-ZnO/p-Si heterojunction solar cell model based on AFORS-HET simulations and provide experimental support in this article.ZnO：B（B-doped ZnO） thin films deposited by metal-organic chemical vapor deposition（MOCVD） are planned to act as electrical emitter layer on p-type c-Si substrate for photovoltaic applications.We investigate the effects of thickness,buffer layer,ZnO：B affinity and work function of electrodes on performances of solar cells through computer simulations using AFORS-HET software package.The energy conversion efficiency of the ZnO：B（n）/ZnO/c-Si（p） solar cell can achieve 17.16%（V（oc）：675.8 mV,J（sc）：30.24 mA/cm^2,FF：83.96%） via simulation.On a basis of optimized conditions in simulation,we carry out some experiments,which testify that the ZnO buffer layer of 20 nm contributes to improving performances of solar cells.The influences of growth temperature,thickness and diborane（B2H6） flow rates are also discussed.We achieve an appropriate condition for the fabrication of the solar cells using the MOCVD technique.The obtained conversion efficiency reaches2.82%（V（oc）：294.4 mV,J（sc）：26.108 mA/cm^2,FF：36.66%）.展开更多
基金National Natural Science Foundation of China(U1932205)Key R&D Program of Shandong Province(2021CXGC010401)+1 种基金Taishan Scholars Program(ts201712035)Project of Qingdao Leading Talents in Entrepreneurship and Innovation。
基金supported by Gazi University Scientific Research Project (BAP),FEF. 05/2012-15
文摘In this paper, the electrical parameters of Au/n-Si （MS） and Au/Si3N4/n-Si （MIS） Schottky diodes are obtained from the forward bias current-voltage （I-V） and capacitance-voltage （C-V） measurements at room temperature. Experimental results show that the rectifying ratios of the MS and MIS diodes at ± 5 V are found to be 1.25 ×103 and 1.27 ×104, respectively. The main electrical parameters of the MS and MIS diodes, such as the zero-bias barrier height （rbBo） and ideality factor （n）, are calculated to be 0.51 eV （I-V）, 0.53 eV （C-V）, and 4.43, and 0.65 eV （I-V）, 0.70 eV （C-V）, and 3.44, respectively. In addition, the energy density distribution profile of the interface states （Nss） is obtained from the forward bias I-V, and the series resistance （Rs） values for the two diodes are calculated from Cheung＇s method and Ohm＇s law.
基金Project supported by the State Key Development Program for Basic Research of China(Nos.2011CBA00706,2011CBA00707)the Tianjin Applied Basic Research Project and Cutting-Edge Technology Research Plan(No.13JCZDJC26900)+2 种基金the Tianjin Major Science and Technology Support Project(No.11TXSYGX22100)the National High Technology Research and Development Program of China(No.2013AA050302)the Fundamental Research Funds for the Central Universities(No.65010341)
文摘We put forward an n-ZnO/p-Si heterojunction solar cell model based on AFORS-HET simulations and provide experimental support in this article.ZnO：B（B-doped ZnO） thin films deposited by metal-organic chemical vapor deposition（MOCVD） are planned to act as electrical emitter layer on p-type c-Si substrate for photovoltaic applications.We investigate the effects of thickness,buffer layer,ZnO：B affinity and work function of electrodes on performances of solar cells through computer simulations using AFORS-HET software package.The energy conversion efficiency of the ZnO：B（n）/ZnO/c-Si（p） solar cell can achieve 17.16%（V（oc）：675.8 mV,J（sc）：30.24 mA/cm^2,FF：83.96%） via simulation.On a basis of optimized conditions in simulation,we carry out some experiments,which testify that the ZnO buffer layer of 20 nm contributes to improving performances of solar cells.The influences of growth temperature,thickness and diborane（B2H6） flow rates are also discussed.We achieve an appropriate condition for the fabrication of the solar cells using the MOCVD technique.The obtained conversion efficiency reaches2.82%（V（oc）：294.4 mV,J（sc）：26.108 mA/cm^2,FF：36.66%）.
