A power amplifier MIC with power combining based on AlGaN/GaN HEMTs was fabricated and measured. The amplifier consists of four 10 × 120μm transistors. A Wilkinson splitters and combining were used to divide and...A power amplifier MIC with power combining based on AlGaN/GaN HEMTs was fabricated and measured. The amplifier consists of four 10 × 120μm transistors. A Wilkinson splitters and combining were used to divide and combine the power. By biasing the amplifier at VDS = 40V, IDS = 0.9A, a maximum CW output power of 41.4dBm with a maximum power added efficiency （PAE） of 32.54% and a power combine efficiency of 69% was achieved at 5.4GHz.展开更多
8GHz 20W internally matched A1GaN/GaN HEMTs have been developed. The input and output matching net- works are realised with microstrip lines on a 0. 381mm thick alumina substrate. To improve the stability factor K of ...8GHz 20W internally matched A1GaN/GaN HEMTs have been developed. The input and output matching net- works are realised with microstrip lines on a 0. 381mm thick alumina substrate. To improve the stability factor K of the device, a lossy RC network is used at the input of the device. The developed internally matched power amplifier module exhibits 43dBm （20W） power output with a 7.3dB linear gain,38.1% PAIE,and combined power efficiency of 70.6% at 8GHz.展开更多
A C-band high efficiency and high gain two-stage power amplifier based on A1GaN/GaN high electron mobility transistor （HEMT） is designed and measured in this paper. The input and output impedances for the optimum po...A C-band high efficiency and high gain two-stage power amplifier based on A1GaN/GaN high electron mobility transistor （HEMT） is designed and measured in this paper. The input and output impedances for the optimum power-added efficiency （PAE） are determined at the fundamental and 2nd harmonic frequency （f0 and 2f0）. The harmonic manipulation networks are designed both in the driver stage and the power stage which manipulate the second harmonic to a very low level within the operating frequency band. Then the inter-stage matching network and the output power combining network are calculated to achieve a low insertion loss. So the PAE and the power gain is greatly improved. In an operation frequency range of 5,4 GHz-5.8 GHz in CW mode, the amplifier delivers a maximum output power of 18.62 W, with a PAE of 55.15 % and an associated power gain of 28.7 dB, which is an outstanding performance.展开更多
For high-voltage and high-power Gallium Nitride(GaN)power amplifiers,a drain modulation circuit with rapid rise and fall time is proposed in this paper.To decrease the rise and fall time,the high-side bootstrap drive ...For high-voltage and high-power Gallium Nitride(GaN)power amplifiers,a drain modulation circuit with rapid rise and fall time is proposed in this paper.To decrease the rise and fall time,the high-side bootstrap drive circuit with an auxiliary discharge switch is proposed.The effect of the parasitics is analyzed based on calculation and the parallel bonding is proposed.The storage capacitance of power supply is calculated quantitatively to provide large pulse current.To ensure safe operation of the power amplifier,the circuit topology with the dead-time control and sequential control is proposed.Finally,a prototype is built to verify the drain modulation circuit design.The experiments prove that the rise time and fall time of the output pulse signal are both less than 100 ns.展开更多
An X-band inverse class-F power amplifier is realized by a 1-mm Al Ga N/Ga N high electron mobility transistor（HEMT）.The intrinsic and parasitic components inside the transistor,especially output capacitor Cds,influ...An X-band inverse class-F power amplifier is realized by a 1-mm Al Ga N/Ga N high electron mobility transistor（HEMT）.The intrinsic and parasitic components inside the transistor,especially output capacitor Cds,influence the harmonic impedance heavily at the X-band,so compensation design is used for meeting the harmonic condition of inverse class-F on the current source plane.Experiment results show that,in the continuous-wave mode,the power amplifier achieves 61.7% power added efficiency（PAE）,which is 16.3% higher than the class-AB power amplifier realized by the same kind of HEMT.To the best of our knowledge,this is the first inverse class-F Ga N internally-matched power amplifier,and the PAE is quite high at the X-band.展开更多
为满足毫米波通信等应用领域对超宽带功率放大器的需求,文章采用南京电子器件研究所50 nm GaN HEMT工艺研制了一款覆盖W、F波段的超宽带功率放大器。首先,使用模型对实验数据进行拟合外推,得到宽带范围内管芯的功率阻抗;其次,采用LC结...为满足毫米波通信等应用领域对超宽带功率放大器的需求,文章采用南京电子器件研究所50 nm GaN HEMT工艺研制了一款覆盖W、F波段的超宽带功率放大器。首先,使用模型对实验数据进行拟合外推,得到宽带范围内管芯的功率阻抗;其次,采用LC结构加高低阻抗微带线方式进行宽带电路匹配,并设计了末级、级间和输入级的匹配电路拓扑结构;最后,对级间匹配电路进行综合优化调整,并采用兰格桥进行功率合成。最终,放大器在80GHz~140GHz范围内,典型线性增益达18dB,饱和输出功率达100mW,同时,在全频段范围内,芯片具有±1dB的功率平坦度和良好的回波损耗,在太赫兹领域具有广阔的应用前景。展开更多
In this paper, we present a high-efficiency S-band gallium nitride （GaN） power amplifier （PA）. This amplifier is fabri- cated based on a self-developed GaN high-electron-mobility transistor （HEMT） with 10 mm gat...In this paper, we present a high-efficiency S-band gallium nitride （GaN） power amplifier （PA）. This amplifier is fabri- cated based on a self-developed GaN high-electron-mobility transistor （HEMT） with 10 mm gate width on SiC substrate. Harmonic manipulation circuits are presented in the amplifier. The matching networks consist of microstrip lines and discrete components. Open-circuited stub lines in both input and output are used to tune the 2rid harmonic wave and match the GaN HEMT to the highest efficiency condition. The developed amplifier delivers an output power of 48.5 dBm （70 W） with a power-added efficiency （PAE） of 72.2% at 2 GHz in pulse condition. When operating at 1.8-2.2 GHz （20% relative bandwidth）, the amplifier provides an output power higher than 48 dBm （,-~ 65 W）, with a PAE over 70% and a power gain above 15 dB. When operating in continuous-wave （CW） operating conditions, the amplifier gives an output power over 46 dBm （40 W） with PAE beyond 60% over the whole operation frequency range.展开更多
A broadband power amplifier is required to cover the full range of cellular frequency band—from 700 MHz to 2600 MHz—in a base station that supports multiple frequency bands simultaneously. Conventional laterally dif...A broadband power amplifier is required to cover the full range of cellular frequency band—from 700 MHz to 2600 MHz—in a base station that supports multiple frequency bands simultaneously. Conventional laterally diffused metal oxide semiconductor （LDMOS） transistors support narrow band applications up to 3 GHz. However, they cannot operate beyond 1 GHz in broadband applications. GaN transistors have much higher power density and operational frequency compared with LDMOS. Therefore, they are ideal for broadband amplifiers that support multiple bands. Theories for designing broadband amplifiers are introduced in this article, and a 500-2500 MHz 60 W GaN amplifier is discussed.展开更多
State-of-the-art AlGaN/GaN high electron mobility structures were grown on semi-insulating 4H-SiC substrates by MOCVD and X-band microwave power high electron mobility transistors were fabricated and characterized.Hal...State-of-the-art AlGaN/GaN high electron mobility structures were grown on semi-insulating 4H-SiC substrates by MOCVD and X-band microwave power high electron mobility transistors were fabricated and characterized.Hall mobility of 2291.1 cm^(2)/(V·s)and two-dimensional electron gas density of 9.954×10^(12)cm^(-2)were achieved at 300 K.The HEMT devices with a 0.45-μm gate length exhibited maximum drain current density as high as 1039.6 mA/mm and peak extrinsic transconductance of 229.7 mS/mm.The f_(T)of 30.89 GHz and f_(max)of 38.71 GHz were measured on the device.Load-pull measurements were performed and analyzed under(-3.5,28)V,(-3.5,34)V and(-3.5,40)V gate/drain direct current bias in class-AB,respectively.The uncooled device showed high linear power gain of 17.04 dB and high power-added efficiency of 50.56%at 8 GHz when drain biased at(-3.5,28)V.In addition,when drain biased at(-3.5,40)V,the device exhibited a saturation output power dens-ity up to 6.21 W/mm at 8 GHz,with a power gain of 11.94 dB and a power-added efficiency of 39.56%.Furthermore,the low f_(max)/f_(T)ratio and the variation of the power sweep of the device at 8 GHz with drain bias voltage were analyzed.展开更多
文摘A power amplifier MIC with power combining based on AlGaN/GaN HEMTs was fabricated and measured. The amplifier consists of four 10 × 120μm transistors. A Wilkinson splitters and combining were used to divide and combine the power. By biasing the amplifier at VDS = 40V, IDS = 0.9A, a maximum CW output power of 41.4dBm with a maximum power added efficiency （PAE） of 32.54% and a power combine efficiency of 69% was achieved at 5.4GHz.
文摘8GHz 20W internally matched A1GaN/GaN HEMTs have been developed. The input and output matching net- works are realised with microstrip lines on a 0. 381mm thick alumina substrate. To improve the stability factor K of the device, a lossy RC network is used at the input of the device. The developed internally matched power amplifier module exhibits 43dBm （20W） power output with a 7.3dB linear gain,38.1% PAIE,and combined power efficiency of 70.6% at 8GHz.
基金Project supported by the National Key Basic Research Program of China(Grant No.2011CBA00606)Program for New Century Excellent Talents in University,China(Grant No.NCET-12-0915)the National Natural Science Foundation of China(Grant No.61334002)
文摘A C-band high efficiency and high gain two-stage power amplifier based on A1GaN/GaN high electron mobility transistor （HEMT） is designed and measured in this paper. The input and output impedances for the optimum power-added efficiency （PAE） are determined at the fundamental and 2nd harmonic frequency （f0 and 2f0）. The harmonic manipulation networks are designed both in the driver stage and the power stage which manipulate the second harmonic to a very low level within the operating frequency band. Then the inter-stage matching network and the output power combining network are calculated to achieve a low insertion loss. So the PAE and the power gain is greatly improved. In an operation frequency range of 5,4 GHz-5.8 GHz in CW mode, the amplifier delivers a maximum output power of 18.62 W, with a PAE of 55.15 % and an associated power gain of 28.7 dB, which is an outstanding performance.
基金supported by the Pri⁃mary Research&Development Plan of Jiangsu Province(Nos.BE2022070,BE2022070-2).
文摘For high-voltage and high-power Gallium Nitride(GaN)power amplifiers,a drain modulation circuit with rapid rise and fall time is proposed in this paper.To decrease the rise and fall time,the high-side bootstrap drive circuit with an auxiliary discharge switch is proposed.The effect of the parasitics is analyzed based on calculation and the parallel bonding is proposed.The storage capacitance of power supply is calculated quantitatively to provide large pulse current.To ensure safe operation of the power amplifier,the circuit topology with the dead-time control and sequential control is proposed.Finally,a prototype is built to verify the drain modulation circuit design.The experiments prove that the rise time and fall time of the output pulse signal are both less than 100 ns.
基金Project supported by the National High Technology Research and Development Program of China(Grant No.2015AA016801)
文摘An X-band inverse class-F power amplifier is realized by a 1-mm Al Ga N/Ga N high electron mobility transistor（HEMT）.The intrinsic and parasitic components inside the transistor,especially output capacitor Cds,influence the harmonic impedance heavily at the X-band,so compensation design is used for meeting the harmonic condition of inverse class-F on the current source plane.Experiment results show that,in the continuous-wave mode,the power amplifier achieves 61.7% power added efficiency（PAE）,which is 16.3% higher than the class-AB power amplifier realized by the same kind of HEMT.To the best of our knowledge,this is the first inverse class-F Ga N internally-matched power amplifier,and the PAE is quite high at the X-band.
文摘为满足毫米波通信等应用领域对超宽带功率放大器的需求,文章采用南京电子器件研究所50 nm GaN HEMT工艺研制了一款覆盖W、F波段的超宽带功率放大器。首先,使用模型对实验数据进行拟合外推,得到宽带范围内管芯的功率阻抗;其次,采用LC结构加高低阻抗微带线方式进行宽带电路匹配,并设计了末级、级间和输入级的匹配电路拓扑结构;最后,对级间匹配电路进行综合优化调整,并采用兰格桥进行功率合成。最终,放大器在80GHz~140GHz范围内,典型线性增益达18dB,饱和输出功率达100mW,同时,在全频段范围内,芯片具有±1dB的功率平坦度和良好的回波损耗,在太赫兹领域具有广阔的应用前景。
基金Project supported by the National Natural Science Foundation of China(Grant No.61203211)the Natural Science Foundation of Jiangsu Higher Education Institutions of China(Grant No.13KJB140006)the Foundation for Outstanding Young Teachers of Nanjing University of Information Science&Technology,China(Grant No.20110423)
文摘In this paper, we present a high-efficiency S-band gallium nitride （GaN） power amplifier （PA）. This amplifier is fabri- cated based on a self-developed GaN high-electron-mobility transistor （HEMT） with 10 mm gate width on SiC substrate. Harmonic manipulation circuits are presented in the amplifier. The matching networks consist of microstrip lines and discrete components. Open-circuited stub lines in both input and output are used to tune the 2rid harmonic wave and match the GaN HEMT to the highest efficiency condition. The developed amplifier delivers an output power of 48.5 dBm （70 W） with a power-added efficiency （PAE） of 72.2% at 2 GHz in pulse condition. When operating at 1.8-2.2 GHz （20% relative bandwidth）, the amplifier provides an output power higher than 48 dBm （,-~ 65 W）, with a PAE over 70% and a power gain above 15 dB. When operating in continuous-wave （CW） operating conditions, the amplifier gives an output power over 46 dBm （40 W） with PAE beyond 60% over the whole operation frequency range.
文摘A broadband power amplifier is required to cover the full range of cellular frequency band—from 700 MHz to 2600 MHz—in a base station that supports multiple frequency bands simultaneously. Conventional laterally diffused metal oxide semiconductor （LDMOS） transistors support narrow band applications up to 3 GHz. However, they cannot operate beyond 1 GHz in broadband applications. GaN transistors have much higher power density and operational frequency compared with LDMOS. Therefore, they are ideal for broadband amplifiers that support multiple bands. Theories for designing broadband amplifiers are introduced in this article, and a 500-2500 MHz 60 W GaN amplifier is discussed.
基金supported by the National Key Research and Development Program of China(2017YFB0402900)the Key-Area Research and Development Program of Guangdong Province(2019B010126001)+3 种基金the Natural Science Foundation for Distinguished Young Scholars of Shandong Province(ZR2019JQ01)the National Natural Sciences Foundation of China(62074144,52022052,62004118)Key R&D plan of Shandong Province(2019JMRH0901,2019JMRH0201)the Natural Science Foundation of Shandong Province(ZR2019BEM030,ZR2019BEM011).
文摘State-of-the-art AlGaN/GaN high electron mobility structures were grown on semi-insulating 4H-SiC substrates by MOCVD and X-band microwave power high electron mobility transistors were fabricated and characterized.Hall mobility of 2291.1 cm^(2)/(V·s)and two-dimensional electron gas density of 9.954×10^(12)cm^(-2)were achieved at 300 K.The HEMT devices with a 0.45-μm gate length exhibited maximum drain current density as high as 1039.6 mA/mm and peak extrinsic transconductance of 229.7 mS/mm.The f_(T)of 30.89 GHz and f_(max)of 38.71 GHz were measured on the device.Load-pull measurements were performed and analyzed under(-3.5,28)V,(-3.5,34)V and(-3.5,40)V gate/drain direct current bias in class-AB,respectively.The uncooled device showed high linear power gain of 17.04 dB and high power-added efficiency of 50.56%at 8 GHz when drain biased at(-3.5,28)V.In addition,when drain biased at(-3.5,40)V,the device exhibited a saturation output power dens-ity up to 6.21 W/mm at 8 GHz,with a power gain of 11.94 dB and a power-added efficiency of 39.56%.Furthermore,the low f_(max)/f_(T)ratio and the variation of the power sweep of the device at 8 GHz with drain bias voltage were analyzed.
