Interdigitated back contact silicon hetero-junction(IBC-SHJ) solar cells exhibit excellent performance owing to the IBC and SHJ structures.The front surface field(FSF) layer composed of electric field passivation and ...Interdigitated back contact silicon hetero-junction(IBC-SHJ) solar cells exhibit excellent performance owing to the IBC and SHJ structures.The front surface field(FSF) layer composed of electric field passivation and chemical passivation has been proved to play an important role in IBC-SHJ solar cells.The electric field passivated layer n^+-a-Si: H, an n-type Si alloy with carbon or oxygen in amorphous phase, is simulated in this study to investigate its effect on IBC-SHJ.It is indicated that the n^+-a-Si: H layer with wider band gap can reduce the light absorption on the front side efficaciously,which hinders the surface recombination of photo-generated carriers and thus contributes to the improvement of the short circuit current density Jsc.The highly doped n^+-a-Si: H can result in the remakable energy band bending, which makes it outstanding in the field passivation, while it makes little contribution to the chemical passivation.It is noteworthy that when the electric field intensity exceeds 1.3 × 10^5 V/cm, the efficiency decrease caused by the inferior chemical passivation is only 0.16%.In this study, the IBC-SHJ solar cell with a front n^+-a-Si: H field passivation layer is simulated, which shows the high efficiency of 26% in spite of the inferior chemical passivation on the front surface.展开更多
Magnesium-based materials have been regarded as promising candidates for large-scale,high-efficiency thermoelectric applications,owing to their excellent dimensionless figure of merit,high abundance,and low cost.In th...Magnesium-based materials have been regarded as promising candidates for large-scale,high-efficiency thermoelectric applications,owing to their excellent dimensionless figure of merit,high abundance,and low cost.In this review,we comprehensively summarize the recent advances of Mg-based thermoelectrics,including Mg_(2)X(X=Si,Ge,Sn),Mg3(Sb,Bi)_(2),andα-MgAgSb,from both material and device level.Their electrical and thermal transport properties are first elucidated based on the crystallographic characteristics,band structures,and phonon dispersions.We then review the optimization strategies towards higher thermoelectric performance,as well as the device applications of Mg-based thermoelectric materials and the related engineering issues.By highlighting the challenges and possible solutions in the end,this review intends to offer perspectives on the future research work to further enhance the performance of Mg-based materials for practical applications.展开更多
A numerical method is presented for the large deflection in elastic analysis of tensegrity structures including both geometric and material nonlinearities.The geometric nonlinearity is considered based on both total L...A numerical method is presented for the large deflection in elastic analysis of tensegrity structures including both geometric and material nonlinearities.The geometric nonlinearity is considered based on both total Lagrangian and updated Lagrangian formulations,while the material nonlinearity is treated through elastoplastic stress-strain relationship.The nonlinear equilibrium equations are solved using an incremental-iterative scheme in conjunction with the modified Newton-Raphson method.A computer program is developed to predict the mechanical responses of tensegrity systems under tensile,compressive and flexural loadings.Numerical results obtained are compared with those reported in the literature to demonstrate the accuracy and efficiency of the proposed program.The flexural behavior of the double layer quadruplex tensegrity grid is sufficiently good for lightweight large-span structural applications.On the other hand,its bending strength capacity is not sensitive to the self-stress level.展开更多
A novel technique of Moveable Reduction Bed Hydride Generator（MRBHG）was applied tohe hydride generation or cold vapor generation of As，Se，Ge，and Hg existing In TraditionalChinese Medicinal Material（TCM）．The si...A novel technique of Moveable Reduction Bed Hydride Generator（MRBHG）was applied tohe hydride generation or cold vapor generation of As，Se，Ge，and Hg existing In TraditionalChinese Medicinal Material（TCM）．The simultaneous determination of the multi－elements wasperformed with ICP－MS．A solid reduction system involving the use of potassiumtetraborohydride and tartaric acid was applied to generating metal hydride or cold vaporefficiently．The factors affecting the metal cold vapor generation were studied．The mainadvantage of the technique is that only a 4μL volume of sample was required for the cold vapor展开更多
Si-based optoelectronics is becoming a very active research area due to its potential applications to optical communications.One of the major goals of this study is to realize all-Si optoelectronic integrated circuit....Si-based optoelectronics is becoming a very active research area due to its potential applications to optical communications.One of the major goals of this study is to realize all-Si optoelectronic integrated circuit.This is due to the fact that Si-based optoelectronic technology can be compatible with Si microelectronic technology.If Si-based optoelectronic devices and integrated circuits can be achieved,it will lead to a new informational technological revolution.In the article,the current developments of this exciting field are mainly reviewed in the recent years.The involved contents are the realization of various Si-based optoelectronic devices,such as light-emitting diodes,optical waveguides devices,Si photonic bandgap crystals,and Si laser,etc.Finally,the developed tendency of all-Si optoelectronic integrated technology are predicted in the near future.展开更多
Si-based germanium is considered to be a promising platform for the integration of electronic and pho- tonic devices due to its high carrier mobility, good optical properties, and compatibility with Si CMOS technology...Si-based germanium is considered to be a promising platform for the integration of electronic and pho- tonic devices due to its high carrier mobility, good optical properties, and compatibility with Si CMOS technology. However, some great challenges have to be confronted, such as： （1） the nature of indirect band gap of Ge; （2） the epitaxy of dislocation-free Ge layers on Si substrate; and （3） the immature technology for Ge devices. The aim of this paper is to give a review of the recent progress made in the field of epitaxy and optical properties of Ge heterostructures on Si substrate, as well as some key technologies on Ge devices. High crystal quality Ge epilayers, as well as Ge/SiGe multiple quantum wells with high Ge content, were successfully grown on Si substrate with a low-temperature Ge buffer layer. A local Ge condensation technique was proposed to prepare germanium-on- insulator （GOI） materials with high tensile strain for enhanced Ge direct band photoluminescence. The advances in formation of Ge n＋p shallow junctions and the modulation of Schottky barrier height of metal/Ge contacts were a significant progress in Ge technology. Finally, the progress of Si-based Ge light emitters, photodetectors, and MOSFETs was briefly introduced. These results show that Si-based Ge heterostructure materials are promising for use in the next-generation of integrated circuits and optoelectronic circuits.展开更多
基金Project supported by the National Key Research Program of China(Grant Nos.2018YFB1500500 and 2018YFB1500200)the National Natural Science Foundation of China(Grant Nos.51602340,51702355,and 61674167)JKW Project,China(Grant No.31512060106)
文摘Interdigitated back contact silicon hetero-junction(IBC-SHJ) solar cells exhibit excellent performance owing to the IBC and SHJ structures.The front surface field(FSF) layer composed of electric field passivation and chemical passivation has been proved to play an important role in IBC-SHJ solar cells.The electric field passivated layer n^+-a-Si: H, an n-type Si alloy with carbon or oxygen in amorphous phase, is simulated in this study to investigate its effect on IBC-SHJ.It is indicated that the n^+-a-Si: H layer with wider band gap can reduce the light absorption on the front side efficaciously,which hinders the surface recombination of photo-generated carriers and thus contributes to the improvement of the short circuit current density Jsc.The highly doped n^+-a-Si: H can result in the remakable energy band bending, which makes it outstanding in the field passivation, while it makes little contribution to the chemical passivation.It is noteworthy that when the electric field intensity exceeds 1.3 × 10^5 V/cm, the efficiency decrease caused by the inferior chemical passivation is only 0.16%.In this study, the IBC-SHJ solar cell with a front n^+-a-Si: H field passivation layer is simulated, which shows the high efficiency of 26% in spite of the inferior chemical passivation on the front surface.
基金financial support from the National Natural Science Foundation of China(Grant Nos.52125103,52071041,12104071,11874356,U21A2054)。
文摘Magnesium-based materials have been regarded as promising candidates for large-scale,high-efficiency thermoelectric applications,owing to their excellent dimensionless figure of merit,high abundance,and low cost.In this review,we comprehensively summarize the recent advances of Mg-based thermoelectrics,including Mg_(2)X(X=Si,Ge,Sn),Mg3(Sb,Bi)_(2),andα-MgAgSb,from both material and device level.Their electrical and thermal transport properties are first elucidated based on the crystallographic characteristics,band structures,and phonon dispersions.We then review the optimization strategies towards higher thermoelectric performance,as well as the device applications of Mg-based thermoelectric materials and the related engineering issues.By highlighting the challenges and possible solutions in the end,this review intends to offer perspectives on the future research work to further enhance the performance of Mg-based materials for practical applications.
基金support of the research reported here by Basic Science Research Program through the National Research Foundation of Korea (NRF)funded by the Ministry of Education, Science and Technology (NRF2010-0019373)
文摘A numerical method is presented for the large deflection in elastic analysis of tensegrity structures including both geometric and material nonlinearities.The geometric nonlinearity is considered based on both total Lagrangian and updated Lagrangian formulations,while the material nonlinearity is treated through elastoplastic stress-strain relationship.The nonlinear equilibrium equations are solved using an incremental-iterative scheme in conjunction with the modified Newton-Raphson method.A computer program is developed to predict the mechanical responses of tensegrity systems under tensile,compressive and flexural loadings.Numerical results obtained are compared with those reported in the literature to demonstrate the accuracy and efficiency of the proposed program.The flexural behavior of the double layer quadruplex tensegrity grid is sufficiently good for lightweight large-span structural applications.On the other hand,its bending strength capacity is not sensitive to the self-stress level.
文摘A novel technique of Moveable Reduction Bed Hydride Generator（MRBHG）was applied tohe hydride generation or cold vapor generation of As，Se，Ge，and Hg existing In TraditionalChinese Medicinal Material（TCM）．The simultaneous determination of the multi－elements wasperformed with ICP－MS．A solid reduction system involving the use of potassiumtetraborohydride and tartaric acid was applied to generating metal hydride or cold vaporefficiently．The factors affecting the metal cold vapor generation were studied．The mainadvantage of the technique is that only a 4μL volume of sample was required for the cold vapor
文摘Si-based optoelectronics is becoming a very active research area due to its potential applications to optical communications.One of the major goals of this study is to realize all-Si optoelectronic integrated circuit.This is due to the fact that Si-based optoelectronic technology can be compatible with Si microelectronic technology.If Si-based optoelectronic devices and integrated circuits can be achieved,it will lead to a new informational technological revolution.In the article,the current developments of this exciting field are mainly reviewed in the recent years.The involved contents are the realization of various Si-based optoelectronic devices,such as light-emitting diodes,optical waveguides devices,Si photonic bandgap crystals,and Si laser,etc.Finally,the developed tendency of all-Si optoelectronic integrated technology are predicted in the near future.
基金supported in part by the National Natural Science Foundation(Nos.61036003,61435013)the Major State Basic Research Development Program of China(No.2013CB632103)
文摘Si-based germanium is considered to be a promising platform for the integration of electronic and pho- tonic devices due to its high carrier mobility, good optical properties, and compatibility with Si CMOS technology. However, some great challenges have to be confronted, such as： （1） the nature of indirect band gap of Ge; （2） the epitaxy of dislocation-free Ge layers on Si substrate; and （3） the immature technology for Ge devices. The aim of this paper is to give a review of the recent progress made in the field of epitaxy and optical properties of Ge heterostructures on Si substrate, as well as some key technologies on Ge devices. High crystal quality Ge epilayers, as well as Ge/SiGe multiple quantum wells with high Ge content, were successfully grown on Si substrate with a low-temperature Ge buffer layer. A local Ge condensation technique was proposed to prepare germanium-on- insulator （GOI） materials with high tensile strain for enhanced Ge direct band photoluminescence. The advances in formation of Ge n＋p shallow junctions and the modulation of Schottky barrier height of metal/Ge contacts were a significant progress in Ge technology. Finally, the progress of Si-based Ge light emitters, photodetectors, and MOSFETs was briefly introduced. These results show that Si-based Ge heterostructure materials are promising for use in the next-generation of integrated circuits and optoelectronic circuits.
