Light-emitting devices based on atomically thin MoSe_(2)

Atomically thin MoSe_(2) layers,as a core member of the transition metal dichalcogenides(TMDs)family,benefit from their appealing properties,including tunable band gaps,high exciton binding energies,and giant oscillator strengths,thus pro-viding an intriguing platform for optoelectronic applications of light-emitting diodes(LEDs),field-effect transistors(FETs),sin-gle-photon emitters(SPEs),and coherent light sources(CLSs).Moreover,these MoSe_(2) layers can realize strong excitonic emis-sion in the near-infrared wavelengths,which can be combined with the silicon-based integration technologies and further encourage the development of the new generation technologies of on-chip optical interconnection,quantum computing,and quantum information processing.Herein,we overview the state-of-the-art applications of light-emitting devices based on two-dimensional MoSe_(2) layers.Firstly,we introduce recent developments in excitonic emission features from atomically thin MoSe_(2) and their dependences on typical physical fields.Next,we focus on the exciton-polaritons and plasmon-exciton polaritons in MoSe_(2) coupled to the diverse forms of optical microcavities.Then,we highlight the promising applications of LEDs,SPEs,and CLSs based on MoSe_(2) and their heterostructures.Finally,we summarize the challenges and opportunities for high-quality emis-sion of MoSe_(2) and high-performance light-emitting devices.

Improving Efficiency by Doping PtOEP into Spiro Light-Emitting Devices

To investigate effective means of improving the efficiency of organic light-emitting devices （OLEDs） by making full use of ,triplet emission, a phosphorescent material Pt （II） Octaethylporphine （PtOEP） is doped into polymer host polyspirobifluorene （Spiro） to allow radiative recombination of triplet excitons. The current and brightness characteristics of the devices are tested and the electroluminescent spectra are described. Both fluorescence and phosphorescence are ob- served,and an obvious increase in external quantum efficiency is realized compared to undoped devices when different phosphorescent dopant concentrations are tried. Thus,the phosphorescent emission from triplet excited states might be an effective way to increase the efficiency of OLEDs when the concentration of the phosphorescent dopant is properiy controlled.

Air-Stable Ultrabright Inverted Organic Light-Emitting Devices with Metal Ion-Chelated Polymer Injection Layer

Here,this work presents an air-stable ultrabright inverted organic lightemitting device(OLED)by using zinc ionchelated polyethylenimine(PEI)as electron injection layer.The zinc chelation is demonstrated to increase the conductivity of the PEI by three orders of magnitude and passivate the polar amine groups.With these physicochemical properties,the inverted OLED shows a record-high external quantum efficiency of 10.0% at a high brightness of 45,610 cd m^(-2) and can deliver a maximum brightness of 121,865 cd m^(-2).Besides,the inverted OLED is also demonstrated to possess an excellent air stability(humidity,35%)with a half-brightness operating time of 541 h@1000 cd m^(-2) without any protection nor encapsulation.

Improving efficiency of organic light-emitting devices by optimizing the LiF interlayer in the hole transport layer

The efficiency of organic light-emitting devices （OLEDs） based on N,N＇-bis（1-naphthyl）-N,N＇-diphenyl-N,1＇- biphenyl-4,4＇-diamine （NPB） （the hole transport layer） and tris（8-hydroxyquinoline） aluminum （Alq3） （both emission and electron transport layers） is improved remarkably by inserting a LiF interlayer into the hole transport layer. This thin LiF interlayer can effectively influence electrical performance and significantly improve the current efficiency of the device. A device with an optimum LiF layer thickness at the optimum position in NPB exhibits a maximum current efficiency of 5.96 cd/A at 215.79 mA/cm2, which is about 86% higher than that of an ordinary device （without a LiF interlayer, 3.2 cd/A）. An explanation can be put forward that LiF in the NPB layer can block holes and balance the recombination of holes and electrons. The results may provide some valuable references for improving OLED current efficiency.

Dependence of Performance of Organic Light-emitting Devices on Sheet Resistance of Indium-tin-oxide Anodes

The dependence of the performance of organic light-emitting devices（OLEDs） on the sheet resistance of indiumtin-oxide（ITO） anodes was investigated by measuring the steady state current density brightness voltage characteristics and the electroluminescent spectra. The device with a higher sheet resistance anode shows a lower current density, a lower brightness level, and a higher operation voltage. The electroluminescence（EL） efficiencies of the devices with the same structure but different ITO anodes show more complicated differences. Furthermore, the shift of the light-emitting zone toward the anode was found when an anode with a higher sheet resistance was used. These performance differences are discussed and attributed to the reduction of hole injection and the increase in voltage drop over ITO anode with the increase in sheet resistance.

Highly efficient polymer phosphorescent light-emitting devices based on a new polyfluorene derivative as host

Several highly efficient iridium-complex polymer light-emitting devices （PLEDs） are fabricated, with a newly synthesized blue conjugated polymer, poly[（9,9-bis（4-（2-ethylhexyloxy）phenyl）-fluorene）-co-（3,7-dibenziothiene-S,S- dioxide15）] （PPF-3,TSO15）, chosen as host. High luminous efficiencies of 7.4 cd.A-1 and 27.4 cd.A-1 are achieved in red and green PLEDs, respectively, by optimizing the doping concentrations of red phosphorescent dye iridium bis（1- phenylisoquinoline） （acetylacetonate） （Ir（piq）） and green phosphorescent dye iridium tris（2-（4-tolyl）pyridinato-N, C2＇） （Ir（mppy）3）.Furthermore, highly efficient white PLEDs （WPLEDs） with the Commission Internationale de l＇Eclairage （CIE） coordinates of （0.35, 0.38） are successfully produced by carefully controlling the doping concentration of the irid- ium complex. The obtained WPLEDs show maximal efficiencies of 14.4 cd.A-1 and 10.1 lm.W-1, which are comparable to those of incandescent bulbs. Moreover, the electroluminescent spectrum of the white device with an initial luminance of about 1000 cd.m-2 is stable, subject to constant applied current stress, indicating that good device stability can be obtained in this system.

Numerical model of multilayer organic light-emitting devices

A numerical model of multilayer organic light-emitting devices is presented in this article. This model is based on the drift-diffusion equations which include charge injection, transport, space charge effects, trapping, heterojunction interface and recombination process. The device structure in the simulation is ITO/CuPc （20 nm）/NPD （40 nm）/Alq3 （60 nm）/LiF/Al. There are two heterojunctions which should be dealt with in the simulation. The I-V characteristics, carrier distribution and recombination rate of a device are calculated. The simulation results and measured data are in good agreement.

Negative capacitance in doped bi-layer organic light-emitting devices

This paper reports that the doped bi-layer organic light-emitting devices are fabricated by doping in different regions of the light-emitting layer, the admittance and luminance spectra to characterize the capacitance and luminance of the device are measured. Negative capacitance （NC） appeared at low frequencies when the doped devices are biased with high voltages. The measured phase difference between AC voltage applied across the device and AC current flowing through the device show that the device is inductive when NC appears.

Enhancement of Frster energy transfer from thermally activated delayed fluorophores layer to ultrathin phosphor layer for high color stability in non-doped hybrid white organic light-emitting devices

Fluorescence/phosphorescence hybrid white organic light-emitting devices（WOLEDs） based on double emitting layers（EMLs） with high color stability are fabricated.The simplified EMLs consist of a non-doped blue thermally activated delayed fluorescence（TADF） layer using 9,9-dimethyl-9,10-dihydroacridine-diphenylsulfone（DMAC-DPS） and an ultrathin non-doped yellow phosphorescence layer employing bis[2-（4-tertbutylphenyl）benzothiazolato-N,C2＇]iridium（acetylacetonate）（（tbt）_2Ir（acac））.Two kinds of materials of 4,7-diphenyl-1,10-phenanthroline（Bphen） and 1,3,5-tris（2-Nphenylbenzimidazolyl） benzene（TPBi） are selected as the electron transporting layer（ETL）,and the thickness of yellow EML is adjusted to optimize device performance.The device based on a 0.3-nm-thick yellow EML and Bphen exhibits high color stability with a slight Commission International de l＇Eclairage（CIE） coordinates variation of（0.017,0.009） at a luminance ranging from 52 cd/m^2 to 6998 cd/m^2.The TPBi-based device yields a high efficiency with a maximum external quantum efficiency（EQE）,current efficiency,and power efficiency of 10%,21.1 cd/A,and 21.3 lm/W,respectively.The ultrathin yellow EML suppresses hole trapping and short-radius Dexter energy transfer,so that Forster energy transfer（FRET）from DMAC-DPS to（tbt）_2Ir（acac） is dominant,which is beneficial to keep the color stable.The employment of TPBi with higher triplet excited state effectively alleviates the triplet exciton quenching by ETL to improve device efficiency.

Optimization of a poly (p-phenylene benzobisoxazole)-based light-emitting device with a complex cathode structure

In this work, we report the preparation of a series of electroluminescent （EL） devices based on a high-performance polymer, poly（p-phenylene benzobisoxazole） （PBO）, and their optoelectronic properties, which have been rarely explored. The device structure is optimised using a complex cathode structure of tris-（8-hydoxyquinoline） aluminium （Alq3）/LiF/Al. By tuning the thickness of the Alq3 layer, we improve the device efficiency dramatically in an optimized condition. Further analysis reveals that the Alq3 layer in the complex cathode structure acts as a hole blocker in addition to its electron-injection role. A green light emission with a maximum brightness of 8.7×103 cd/m2 and a moderate current efficiency of 4.8 cd/A is obtained. These values are the highest ever reported for PBO devices. The high operational stability demonstrated by the present device makes it a promising tool for display and lighting applications. A new material is added to the selection of polymers used in this field up to now.

Bright hybrid white light-emitting quantum dot device with direct charge injection into quantum dot

A bright white quantum dot light-emitting device （white-QLED） with 4-[4-（1-phenyl-lH-benzo[d]imidazol-2- yl）phenyl]-2- [3-（tri-phenylen-2-yl）phen-3-yl]quinazoline deposited on a thin film of mixed green/red-QDs as a bilayer emitter is fabricated. The optimized white-QLED exhibits a turn-on voltage of 3.2 V and a maximum brightness of 3660 cd/m2 @8 V with the Commission Internationale de l＇Eclairage （CIE） chromaticity in the region of white light. The ultra-thin layer of QDs is proved to be critical for the white light generation in the devices. Excitation mechanism in the white-QLEDs is investigated by the detailed analyses of electroluminescence （EL） spectral and the fluorescence lifetime of QDs. The results show that charge injection is a dominant mechanism of excitation in the white-QLED.

High-contrast top-emitting organic light-emitting devices

In this paper we report on a high-contrast top-emitting organic light-emitting device utilizing a moderate-reflection contrast-enhancement stack and a high refractive index anti-reflection layer.The contrast-enhancement stack consists of a thin metal anode layer,a dielectric bilayer,and a thick metal underlayer.The resulting device,with the optimized contrast-enhancement stack thicknesses of Ni（30 nm）/MgF 2（62 nm）/ZnS（16 nm）/Ni（20 nm） and the 25-nm-thick ZnS anti-reflection layer,achieves a luminous reflectance of 4.01% in the visible region and a maximum current efficiency of 0.99 cd/A（at 62.3 mA/cm 2） together with a very stable chromaticity.The contrast ratio reaches 561：1 at an on-state brightness of 1000 cd/m^2 under an ambient illumination of 140 lx.In addition,the anti-reflection layer can also enhance the transmissivity of the cathode and improve light out-coupling by the effective restraint of microcavity effects.

Luminescent Enhancement of Heterostructure Organic Light-Emitting Devices Based on Aluminum Quinolines

High performance organic light-emitting devices （OLEDs） have been investigated by using fluorescent bis （2-methyl-8-quinolinolato）（para-phenylphenolato）aluminum（BAlq） as an emissive layer on the performance of multicolor devices consisting of N, N＇-bis-（1-naphthyl）-N,N＇diphenyl- 1,1＇-biphenyl-4,4＇- diamine （NPB） as hole transport layer. The results show that the performance of heterostructure blue light-emitting device composed of 8-hydroxyquinoline aluminum （Alq3） as an electron transport layer has been dramatically enhanced. In the case of high performance heterostructure devices, the electroluminescent spectra has been perceived to vary strongly with the thickness of the organic layers due to the different recombination region, which indicates that various color devices composed of identical components could be implemented by changing the film thickness of different functional layers.

Performance and stability-enhanced inorganic perovskite light-emitting devices by employing triton X-100

Significantly enhanced electroluminescence performance and stability of all-inorganic perovskite light-emitting devices(PeLEDs) have been achieved by adding triton X-100 into the perovskite precursors.The small perovskite grains arranged tightly and formed large grains as the triton X-100 were introduced.Thus the nonradiative defects originated from Pb atoms at the grain boundaries were highly passivated by triton X-100 and resulted in the promotion of PeLED performance,including a turn-on voltage of 3.2 V,a brightness of 63500 cd/m^(2),a current efficiency of 17.4 cd/A,and a prolonged lifetime of 2 h in air.

High-Efficiency Green Phosphorescent Organic Light-Emitting Diode Based on Simplified Device Structures

A high-efficiency green phosphorescent organic light emitting diode with a simplified structure is achieved that is free of a hole transport layer. The design of this kind of device structure not only saves the consumption of organic materials but also greatly reduces the structural heterogeneities and effectively facilitates the charge injection into the emissive layer. The resulting green phosphorescent organic light-emitting diodes （PHOLEDs） exhibit higher electroluminescent efficiency. The maximum external quantum efficiency and current efficiency reach 23.7% and 88 cd/A, respectively. Moreover the device demonstrates satisfactory stability, keeping 23.7% and 88cd/A, 22% and 82cd/A, respectively, at a luminance of 100 and 1000cd/m2. The working mechanism for achieving high efficiency based on such a simple device structure is discussed correspondingly. The improved charge carrier injection and transport balance are proved to prominently contribute to achieve the high efficiency and great stability at high luminance in the green PHOLEDs.

Review of My Research Work on Ferroelectric Films and Si-Based Device Applications: Opportunity and Challenge

Ferroelectric materials have many interesting physical properties such as ferroelectricity, pyroelectricity, piezoelectricity, and opto-electricity, and applying ferroelectric materials in the forms of thin and thick films and integrating them on the silicon substrate as electronic and MEMS devices is a very attractive research area and challenging. In this paper, we report our research works on ferroelectric MEMS and ferroelectric films for electronic device applications. Pyroelectric thin film infrared sensors have been made, characterized, and a 32×32 array with its size of 1cm×1cm has been obtained on Si membrane. Ferroelectric thin films in amorphous phase have been applied to make silicon based hydrogen gas sensors with the metal/amorphous ferroelectric film/metal device structure, and its turn-on voltage of about 4.5V at ～1000 ppm in air is about 7 times of the best value reported in the literature. For the application of electron emission flat panel display, ferroelectric BST thin films with excess Ti concentrations have been coated on Si tips, the threshold voltage of those ferroelectric film coated tips has been reduced about one order from ～70 V/μm to 4～10 V/μm for different Ti concentrations, and however, the electron emission current density has been increased at least 3～4 order for those coated tips compared to that of the bare Si tips. To fulfill in the thickness gap between thin film of typical ～1 μm made by PVD/CVD and polished ceramic wafer of ～50 μm from the bulk, piezoelectric films with thickness in a range of 1～30 μm have been successfully deposited on Si substrate at a low temperature of 650oC by a novel hybridized deposition technique, and piezoelectric MEMS ultrasonic arrays have been very recently obtained with the sound pressure level up to ～120 dB. More detailed results will be presented and mechanisms will be discussed.

ZnO-based deep-ultraviolet light-emitting devices

Deep-ultraviolet（DUV） light-emitting devices（LEDs） have a variety of potential applications.Zinc-oxide-based materials,which have wide bandgap and large exciton binding energy,have potential applications in high-performance DUV LEDs.To realize such optoelectronic devices,the modulation of the bandgap is required.This has been demonstrated by the developments of Mg_xZn_（1-x）O and Be_xZn_（1-x）O alloys for the larger bandgap materials.Many efforts have been made to obtain DUV LEDs,and promising successes have been achieved continuously.In this article,we review the recent progress of and problems encountered in the research of ZnO-based DUV LEDs.

Progress of Si-based Optoelectronic Devices

Si-based optoelectronics is becoming a very active research area due to its potential applications to optical communications.One of the major goals of this study is to realize all-Si optoelectronic integrated circuit.This is due to the fact that Si-based optoelectronic technology can be compatible with Si microelectronic technology.If Si-based optoelectronic devices and integrated circuits can be achieved,it will lead to a new informational technological revolution.In the article,the current developments of this exciting field are mainly reviewed in the recent years.The involved contents are the realization of various Si-based optoelectronic devices,such as light-emitting diodes,optical waveguides devices,Si photonic bandgap crystals,and Si laser,etc.Finally,the developed tendency of all-Si optoelectronic integrated technology are predicted in the near future.

Recombination Efficiency and Width in Bilayer Organic Light-emitting Devices

A bilayer model with ohmic anode contact and injection limited cathode contact has been proposed to calculate the recombination efficiency and recombination zone width of the device. The effects of the thickness of hole transport layer and the barriers of organic/organic interface on the combination efficiency and recombination width have been discussed. It is found that： （1） When the electrons are blocked fully and the holes are not blocked significantly at the organic/organic interface, for a given Lh/L, the recombination efficiency increases with increasing the applied voltage, but at a higher applied voltage, the recombination efficiency decreases with increasing Lh/L; （2） The recombination efficiency increases with increasing applied voltage and Hh＇, and when applied voltage and Hh＇ exceed some value, the recombination efficiency appears as a plateau; （3） The recombination width decreases with increasing the applied voltage and Lh/L. This model might explain the relative experiment phenomena.

Green Light-Emitting Organic Electroluminescent Device with a New Fluorescent Dye Dispersed in Poly(N-vinylcarbazole) Emitter Layer

Double-layer organic electroluminescent devices have been constructed. A new fluorescent dye, 9,10-bis(phenylethynyl)anthracence, was chosen as the dopant which was molecularly dispersed in the polymer film, and green light was observed from the device with luminance of 130cd/m(2) at 17V.