Thermodynamic Performance of Three-Terminal Hybrid Quantum Dot Thermoelectric Devices

We propose four different models of three-terminal quantum dot thermoelectric devices. From general thermodynamic laws, we examine the rew;rsible efficiencies of the four different models. Based on the master equation, the expressions for the efficiency and power output are derived and the corresponding working regions are determined. Moreover, we particularly analyze the performance of a three-terminal hybrid quantum dot refrigerator. The performance characteristic curves and the optimal performance parameters are obtained. Finally, we discuss the influence of the nonradiative effects on the optimal performance parameters in detail.

Flexible Memristive Devices Based on Graphene Quantum-Dot Nanocomposites

Artificial neural networks(ANNs)are attracting attention for their high performance in various fields,because increasing the network size improves its functioning.Since large-scale neural networks are difficult to implement on custom hardware,a two-dimensional(2D)structure is applied to an ANN in the form of a crossbar.We demonstrate a synapse crossbar device from recent research by applying a memristive system to neuromorphic chips.The system is designed using two-dimensional structures,graphene quantum dots(GQDs)and graphene oxide(GO).Raman spectrum analysis results indicate a D-band of 1421 cm^(−1) that occurs in the disorder;band is expressed as an atomic characteristic of carbon in the sp2 hybridized structure.There is also a G-band of 1518 cm^(−1) that corresponds to the graphite structure.The G bands measured for RGO-GQDs present significant GQD edge-dependent shifts with position.To avoid an abruptly-formed conduction path,effect of barrier layer on graphene/ITO interface was investigated.We confirmed the variation in the nanostructure in the RGO-GQD layers by analyzing them using HR-TEM.After applying a negative bias to the electrode,a crystalline RGO-GQD region formed,which a conductive path.Especially,a synaptic array for a neuromorphic chip with GQDs applied was demonstrated using a crossbar array.

Paving continuous heat dissipation pathways for quantum dots in polymer with orangeinspired radially aligned UHMWPE fibers

Thermal management of nanoscale quantum dots(QDs)in light-emitting devices is a long-lasting challenge.The existing heat transfer reinforcement solutions for QDs-polymer composite mainly rely on thermal-conductive fillers.However,this strategy failed to deliver the QDs’heat generation across a long distance,and the accumulated heat still causes considerable temperature rise of QDs-polymer composite,which eventually menaces the performance and reliability of lightemitting devices.Inspired by the radially aligned fruit fibers in oranges,we proposed to eliminate this heat dissipation challenge by establishing long-range ordered heat transfer pathways within the QDs-polymer composite.Ultrahigh molecular weight polyethylene fibers(UPEF)were radially aligned throughout the polymer matrix,thus facilitating massive efficient heat dissipation of the QDs.Under a UPEF filling fraction of 24.46 vol%,the in-plane thermal conductivity of QDs-radially aligned UPEF composite(QDs-RAPE)could reach 10.45 W m^(−1) K^(−1),which is the highest value of QDs-polymer composite reported so far.As a proof of concept,the QDs’working temperature can be reduced by 342.5℃ when illuminated by a highly concentrated laser diode(LD)under driving current of 1000 mA,thus improving their optical performance.This work may pave a new way for next generation high-power QDs lighting applications.

Materials and device engineering to achieve high-performance quantum dots light emitting diodes for display applications

Quantum dots(QDs)have attracted wide attention from academia and industry because of their advantages such as high emitting efficiency,narrow half-peak width,and continuously adjustable emitting wavelength.QDs light emitting diodes(QLEDs)are expected to become the next generation commercial display technology.This paper reviews the progress of QLED from physical mechanism,materials,to device engineering.The strategies to improve QLED performance from the perspectives of quantum dot materials and device structures are summarized.

Electrically driven uniaxial stress device for tuning in situ semiconductor quantum dot symmetry and exciton emission in cryostat

Uniaxial stress is a powerful tool for tuning exciton emitting wavelength, polarization, fine-structure splitting (FSS), and the symmetry of quantum dots (QDs). Here, we present a technique for applying uniaxial stress, which enables us in situ to tune exciton optical properties at low temperature down to 15 K with high tuning precision. The design and operation of the device are described in detail. This technique provides a simple and convenient approach to tune QD structural symmetry, exciton energy and biexciton binding energy. It can be utilized for generating entangled and indistinguishable photons. Moreover, this device can be employed for tuning optical properties of thin film materials at low temperature.

Bright hybrid white light-emitting quantum dot device with direct charge injection into quantum dot

A bright white quantum dot light-emitting device （white-QLED） with 4-[4-（1-phenyl-lH-benzo[d]imidazol-2- yl）phenyl]-2- [3-（tri-phenylen-2-yl）phen-3-yl]quinazoline deposited on a thin film of mixed green/red-QDs as a bilayer emitter is fabricated. The optimized white-QLED exhibits a turn-on voltage of 3.2 V and a maximum brightness of 3660 cd/m2 @8 V with the Commission Internationale de l＇Eclairage （CIE） chromaticity in the region of white light. The ultra-thin layer of QDs is proved to be critical for the white light generation in the devices. Excitation mechanism in the white-QLEDs is investigated by the detailed analyses of electroluminescence （EL） spectral and the fluorescence lifetime of QDs. The results show that charge injection is a dominant mechanism of excitation in the white-QLED.

Room-Temperature Organic Negative Differential Resistance Device Using CdSe Quantum Dots as the ITO Modification Layer

Room-temperature negative differential resistance （NDR） has been observed in different types of organic materials. However, detailed study on the influence of the organic material on NDR performance is still scarce. In this work, room-temperature NDR ＆ observed when CdSe quantum dot （QD） modified ITO is used as the electrode. Furthermore, material dependence of the NDR performance is observed by selecting materials with different charge transporting properties as the active layer, respectively. A peak-to-valley current ratio up to 9 is observed. It is demonstrated that the injection barrier between ITO and the organic active layer plays a decisive role for the device NDR performance. The influence of the aggregation state of CdSe QDs on the NDR performance is also studied, which indicates that the NDR is caused by the resonant tunneling process in the ITO/CdSe QD/organic active layer structure.

Phase transition and charge transport through a triple dot device beyond the Kondo regime

Semiconductor quantum dot structure provides a promising basis for quantum information processing, within which to reveal the quantum phase and charge transport is one of the most important issues. In this paper, by means of the numerical renormalization group technique, we study the quantum phase transition and the charge transport for a parallel triple dot device in the strongly correlated limit, focusing on the effect of inter-dot hopping t beyond the Kondo regime. We find the quantum behaviors depend closely on the initial electron number on the dots, and the present model may map to single,double, and side-coupled impurity models in different parameter spaces. An orbital spin-1/2 Kondo effect between the conduction leads and the bonding orbital, and several magnetic-frustration phases are demonstrated when t is adjusted to different regimes. To understand these phenomena, a canonical transformation of the energy levels is given, and important physical quantities with respect to increasing t and necessary theoretical discussions are shown.

Air-Stable,Eco-Friendly RRAMs Based on Lead-Free Cs_(3)Bi_(2)Br_(9)Perovskite Quantum Dots for High-Performance Information Storage

Development of lead-free halide perovskites that are innocuous and stable has become an attractive trend in resistive random access memory(RRAM)fields.However,their inferior memory properties compared with the lead-based analogs hinder their commercialization.Herein,the lead-free Cs_(3)Bi_(2)Br_(9)perovskite quantum dot(PQD)-based RRAMs are reported with outstanding memory performance,where Cs_(3)Bi_(2)Br_(9)quantum dots(QDs)are synthesized via a modified ligand-assisted recrystallization process.This is the first report of applying Cs_(3)Bi_(2)Br_(9)QDs as the switching layer for RRAM device.The Cs_(3)Bi_(2)Br_(9)QD device demonstrates nonvolatile resistive switching(RS)effect with large ON/OFF ratio of 105,low set voltage of-0.45 V,as well as good reliability,reproducibility,and flexibility.Concurrently,the device exhibits the notable tolerance toward moisture,heat and light illumination,and long-term stability of 200 days.More impressively,the device shows the reliable light-modulated RS behavior,and therefrom the logic gate operations including"AND"and"OR"are implemented,foreboding its prospect in logic circuits integrated with storage and computation.Such multifunctionality of device could be derived from the unique 2D layered crystal structure,small particle size,quantum confinement effect,and photoresponse of Cs_(3)Bi_(2)Br_(9)QDs.This work provides the strategy toward the high-performance RRAMs based on stable and eco-friendly perovskites for future applications.

All-Optical Reconfigurable Metamaterial Employing the Self-Assembly of CdTe Quantum Dots

Positively and negatively charged polyelectrolytes, namely, Poly(diallyldimethylammonium chloride) and Poly(styrene sulfonate), respectively, were employed to disperse and deploy negatively charged quantum dots on an otherwise passive metamaterial structure with a resonant frequency of 0.62 THz, by employing a layer-by-layer, self-assembly scheme. Upon exposure to a UV source with a wavelength of 365 nm the amplitude modulation was observed to increase with increases in the number of deposited bi-layers, until a modulation maximum of 2.68% was recorded enabling an all-optical, dynamically reconfigurable metamaterial geometry. Furthermore, amplitude modulation was subsequently observed to decrease with further increases in the number of layers employed due to quenching and shadowing effects. The experimental observations reported herein will enable the utilization of all-optical reconfigurable THz devices for communication and data transmission applications.

Molecularly Imprinted Polymer Based on GO-QDs as Enhanced Fluorescent Nanoscale Device for Specific Recognition of Target Protein

In this work the enhanced molecularly imprinted optosensing material based on graphene oxide-quantum dots （ GO- QDs） was synthesized for highly selective and sensitive specific recognition of the target protein, bovine serum albumin （BSA）. Here, GO was introduced to enhance the efficiency of mass-transfer in recognition of target protein. Molecularly imprinted polymer coated GO-QDs using BSA as template （BMIP-coated GO-QDs ） exhibited a fast mass-transfer speed, which could be ascribed to the high volume of efficient surface area and high target recognition efficiency of the synthesized nanoscale device. Under optimal conditions, it was found that the BSA as target protein could remarkably quench the relative fluorescence intensity of BMIP- coated GO-QDs linearly in a concentration-dependent manner that was best described by a Stern-Volmer equation. The Ksv （Stern- Volmer constant） for template BSA was much higher than bovine hemoglobin （BHb） and lysozyme （Lyz）, implying a highly selective recognition ability of the BMIP-coated GO-QDs to BSA. This enhanced fluorescent nanoscale device may provide opportunities to develop a system that is efficient and effective and has potential in the design of highly effective fluorescent receptor for recognition of target protein in Droteomics studies.

Kondo effect in quantum dots and molecular devices

Kondo effect is a very important many-body phenomenon in condensed matter physics,which explains why the resistance increases as the temperature is lowered (usually <10 K) in dilute magnetic alloy, and why the con-ductance increases as temperature is decreased in quantum dots. This paper simply introduces equilibrium and non- equilibrium Kondo effects in quantum dots together with the Kondo effect in quantum dots with even number of electrons (when the singlet and triplet states are degenerate). Fur-thermore, Kondo effect in single atom/molecular transistors is introduced, which indicates a new way to study Kondo effect.

Ge quantum dots light-emitting devices

Si photonics becomes one of the research focuses in the field of photonics. Si-based light-emitting devices are one of the most important devices in this field. In this paper, we review the Si-based light-emitting devices fabricated by embedding Ge self-assembled quantum dots into optical microcavities. Ge self-assembled quantum dots emit light in the telecommunication wavelength range from 1.3 to 1.6 pro, for which Si is transparent. Ge self- assembled quantum dots were grown on silicon-on- insulator （SOI） by molecular beam epitaxy （MBE） in Stranski-Krastanov （S-K） mode. Then, electron beam lithography （EBL） was used to define the pattern of optical microcavities on the wafer. Finally, the pattern was transferred onto the Si/Ge slab by inductive coupled plasma （ICP） dry etching. Room-temperature photolumi- nescence （PL） was used to characterize the light-emitting properties of fabricated devices. The results showed that strong resonant light emission was observed in different optical microcavities. Significant enhancement of the intensity was obtained by the optical resonance. Based on the results of PL, we designed and fabricated current- injected light-emitting devices based on Ge self-assembled quantum dots in optical microcavities. Room-temperature resonant light emission was observed from Ge dots in a 3.8 μm microdisk resonator.

基于多功能苯乙基溴化铵修饰层的喷墨打印钙钛矿量子点发光二极管

钙钛矿量子点(PQD)的喷墨打印技术在全彩显示应用中具有巨大潜力,但一些关键问题仍然影响其发光效率,例如不平衡的载流子注入、低质量的钙钛矿薄膜以及PQD自身的非辐射复合通道等。为解决这些问题,我们引入了界面修饰层苯乙基溴化铵(PEABr)以平衡器件的载流子传输。PEABr与钙钛矿二元溶剂(甲苯、萘)具有相似的结构,可改善PQD的印刷特性和成膜能力,并有效钝化PQD膜的Br-空位和界面缺陷。基于这一策略,成功实现了在414 cd/m^(2)亮度下,最大外量子效率(EQE)达到8.82%、电流效率(CE)达到29.15 cd/A的喷墨打印钙钛矿量子点发光二极管(PeLED),为喷墨打印技术在未来显示领域中的应用提供了有益的思路。

从制备到应用:InP量子点的发展与应用前景

量子点材料具有与尺寸相关的优异光学性能,如发光波长可谐调、发射半峰宽窄、激发范围宽等,应用领域广泛。然而目前主流的量子点普遍含有镉、铅等元素,不利于商业化产品发展。磷化铟(InP)量子点无重金属毒性,光谱范围可覆盖整个可见光区,具有与镉基量子点相媲美的发光和光电性能,逐渐得到关注。本文综述了近年来InP量子点的合成方法和应用方面的研究进展,首先探讨了热注入、加热、晶核生长、阳离子交换等InP量子点合成方法的优势与缺陷,然后重点介绍了目前InP量子点在照明显示、光伏、光催化和光学标记成像等领域取得的应用成果。最后,从材料合成和器件应用2个角度提出了InP量子点发展面临的挑战及可能的解决方案,以期推动InP量子点的研究和应用,为光电领域的发展提供新的思路。

Zirconia quantum dots for a nonvolatile resistive random access memory device

We propose a nonvolatile resistive random access memory device by employing nanodispersion of zirconia(ZrO2) quantum dots(QDs) for the formation of an active layer. The memory devices comprising a typical sandwich structure of Ag(top)/ZrO2(active layer)/Ti(bottom) are fabricated using a facile spin-coating method. The optimized device exhibits a high resistance state/low resistance state resistance difference(about 10 Ω), a good cycle performance(the number of cycles larger than 100), and a relatively low conversion current(about 1 μA). Atomic force microscopy and scanning electron microscope are used to observe the surface morphology and stacking state of the ZrO2 active layer. Experimental results show that the ZrO2 active layer is stacked compactly and has a low roughness(Ra=4.49 nm) due to the uniform distribution of the ZrO2 QDs. The conductive mechanism of the Ag/ZrO2/Ti device is analyzed and studied, and the conductive filaments of Ag ions and oxygen vacancies are focused on to clarify the resistive switching memory behavior. This study offers a facile approach of memristors for future electronic applications.

一种可用于智能监测的量子点神经形态显示器件

制备了基于量子点的神经形态显示器件。通过新一代显示技术量子点发光二极管(Quantum Dot Light Emitting Diodes,QLED)与人工神经突触的有机结合,将处理模块和显示像素集成到一个器件上。进行任务决策和智能显示时,由于其存算一体的特性,不用频繁调动数据,降低了功耗并提高了计算效率。神经形态显示器件的发射光强度直接显示了器件对不同频率的脉冲刺激的处理结果。在对水果的智能监测中,该器件可以实现对变质水果的有效识别和可视化警报。

Dopant atoms as quantum components in silicon nanoscale devices

Recent progress in nanoscale fabrication allows many fundamental studies of the few dopant atoms in various semiconductor nanostructures. Since the size of nanoscale devices has touched the limit of the nature, a single dopant atom may dominate the performance of the device. Besides, the quantum computing considered as a future choice beyond Moore＇s law also utilizes dopant atoms as functional units. Therefore, the dopant atoms will play a significant role in the future novel nanoscale devices. This review focuses on the study of few dopant atoms as quantum components in silicon nanoscale device. The control of the number of dopant atoms and unique quantum transport characteristics induced by dopant atoms are presented. It can be predicted that the development of nanoelectronics based on dopant atoms will pave the way for new possibilities in quantum electronics.

II-VI族半导体量子点的发光特性及其应用研究进展

半导体量子点由于具有独特的发光特性而具有极高的应用价值。结合本实验室的工作介绍了半导体量子点的发光原理和发光特性,在实验中发现核壳结构的CdSe/CdS半导体量子点比没有包覆的CdSe半导体量子点的发光稳定性提高,吸收光谱和发射光谱均发生红移,而且粒径不同,半导体量子点所呈现的颜色也不同,随着粒径的增加吸收光谱和发射光谱向长波方向红移。介绍了半导体量子点在光电子器件和生物医学方面的应用,并对其发展前景进行了展望。

全无机胶体量子点显示技术

基于胶体量子点发光的全无机显示器件具有优于OLED的电致发光和抗环境性优势,将成为新一代平板显示器件。本文介绍了全无机胶体量子点显示的优势和发展潜力,介绍了GaN电荷传输层量子点显示器件、金属氧化物电荷传输层量子点显示器件、交流驱动多层结构的透明量子点显示器以及单极性量子点显示器件等。指出深入研究全无机胶体量子点发光器件的电荷输运机制,在新材料、新器件结构和新驱动机制等方面,改进器件的电致发光效率是目前需要解决的主要问题。