Anodized composite films containing Si C nanoparticles were synthesized on Ti6Al4 V alloy by anodic oxidation procedure in C4O6H4Na2 electrolyte. Scanning electron microscopy(SEM), energy dispersive spectroscopy(EDS) ...Anodized composite films containing Si C nanoparticles were synthesized on Ti6Al4 V alloy by anodic oxidation procedure in C4O6H4Na2 electrolyte. Scanning electron microscopy(SEM), energy dispersive spectroscopy(EDS) and X-ray photoelectron spectroscopy(XPS) were employed to characterize the morphology and composition of the films fabricated in the electrolytes with and without addition of Si C nanoparticles. Results show that Si C particles can be successfully incorporated into the oxide film during the anodizing process and preferentially concentrate within internal cavities and micro-cracks. The ball-on-disk sliding tests indicate that Si C-containing oxide films register much lower wear rate than the oxide films without Si C under dry sliding condition. Si C particles are likely to melt and then are oxidized by frictional heat during sliding tests. Potentiodynamic polarization behavior reveals that the anodized alloy with Si C nanoparticles results in a reduction in passive current density to about 1.54×10-8 A/cm2, which is more than two times lower than that of the Ti O2 film(3.73×10-8 A/cm2). The synthesized composite film has good anti-wear and anti-corrosion properties and the growth mechanism of nanocomposite film is also discussed.展开更多
Thermoelectric materials, Mg2Si1-xGex （x=0, 0.2, 0.4, 0.6, 0.8, 1）, have been prepared by bulk mechanical alloying （BMA） and hot pressing （HP）. The electrical conductivity, Seebeck coefficient and thermal conduc...Thermoelectric materials, Mg2Si1-xGex （x=0, 0.2, 0.4, 0.6, 0.8, 1）, have been prepared by bulk mechanical alloying （BMA） and hot pressing （HP）. The electrical conductivity, Seebeck coefficient and thermal conductivity were measured from room temperature up to about 700 K. The electrical conductivity of all the samples increases with increasing temperature, while the Seebeck coefficient and thermal conductivity decrease with increasing temperature. Mg2Si and Mg2Si0.8Ge0.2 possess negative type of conductivity, while for other compounds it is positive. At the same time, the effect of hot processing condition on thermoelectric properties was also investigated. The maximum figure of merit of Mg2Si0.6Ge0.4 was obtained with the processing parameter of BMA at 600 cycles and hot pressing at 773 K and i GPa for i h.展开更多
基金Project(51271012)supported by the National Natural Science Foundation of China
文摘Anodized composite films containing Si C nanoparticles were synthesized on Ti6Al4 V alloy by anodic oxidation procedure in C4O6H4Na2 electrolyte. Scanning electron microscopy(SEM), energy dispersive spectroscopy(EDS) and X-ray photoelectron spectroscopy(XPS) were employed to characterize the morphology and composition of the films fabricated in the electrolytes with and without addition of Si C nanoparticles. Results show that Si C particles can be successfully incorporated into the oxide film during the anodizing process and preferentially concentrate within internal cavities and micro-cracks. The ball-on-disk sliding tests indicate that Si C-containing oxide films register much lower wear rate than the oxide films without Si C under dry sliding condition. Si C particles are likely to melt and then are oxidized by frictional heat during sliding tests. Potentiodynamic polarization behavior reveals that the anodized alloy with Si C nanoparticles results in a reduction in passive current density to about 1.54×10-8 A/cm2, which is more than two times lower than that of the Ti O2 film(3.73×10-8 A/cm2). The synthesized composite film has good anti-wear and anti-corrosion properties and the growth mechanism of nanocomposite film is also discussed.
文摘Thermoelectric materials, Mg2Si1-xGex （x=0, 0.2, 0.4, 0.6, 0.8, 1）, have been prepared by bulk mechanical alloying （BMA） and hot pressing （HP）. The electrical conductivity, Seebeck coefficient and thermal conductivity were measured from room temperature up to about 700 K. The electrical conductivity of all the samples increases with increasing temperature, while the Seebeck coefficient and thermal conductivity decrease with increasing temperature. Mg2Si and Mg2Si0.8Ge0.2 possess negative type of conductivity, while for other compounds it is positive. At the same time, the effect of hot processing condition on thermoelectric properties was also investigated. The maximum figure of merit of Mg2Si0.6Ge0.4 was obtained with the processing parameter of BMA at 600 cycles and hot pressing at 773 K and i GPa for i h.
