High Temperature Creep behaviour of a Si_3N_4 Whisker Reinforced Al-Fe-V-Si Composite

The creep behaviour of β-Si3N4 whisker reinforced Al-8.5Fe-1.3V-1.7Si composite has been investigated at the temperature 773 and 823 K. The results are characterized by high stress exponent and high apparent creep activation energy The creep data can be interpreted based on the incorporation of a threshold Stress and a load transfer coefficient into the power-law creep equation. A good correlation between the normalized creep rate and normalized effective stress is available which demonstrates that the creep behaviour of both the alloy and the composite is controlled by the matrix lattice self-diffusion in AI. EXamination on microstructure shows that edge dislocations exist at the interfaces between two adjacent whiskers and the intedeces emit edge dislocations in parallel paired-columns.

氮化硅低温转化合成碳化硅晶须研究

对氮化硅转化法制备碳化硅晶须的反应过程进行了热力学分析;采用氮化硅为硅源,石墨、活性炭和炭黑为碳源,氧化硼作为催化剂,利用氮化硅转化法分别在1500℃、1550℃、1600℃合成碳化硅晶须,通过X射线衍射和扫描电子显微镜分析合成晶须的特征。结果表明:合成反应在1450℃以上可以发生,且随着温度的升高,平衡常数急剧增加,SiC晶须直径变大;以活性炭和炭黑等较高活性的碳源代替石墨可以提高晶须的质量和生成量,通过对晶须合成过程的分析,推测晶须的生长属于螺旋位错生长机理。

Si_3N_4晶须结合剂合成PCBN微观组织结构的研究

本文以Si3N4晶须为结合剂,高温高压下合成了聚晶立方氮化硼,烧结压力为5～7GPa,温度为1400～1500℃,选用了石墨管+NaCl管+钼杯组装方式。采用金相显微镜、扫描电镜和X射线衍射仪等仪器设备研究了产品PCBN的组织结构。金相显微镜结果表明,PCBN的表面组织比较均匀。扫描电镜结果表明,PCBN的烧结情况良好,结合剂对CBN高温润湿情况良好。X射线衍射结果表明,有新的物相生成。