Effects of Co_(2)O_(3)Addition on Microstructure and Properties of SiC Composite Ceramics for Solar Absorber and Storage

SiC composite ceramics for solar absorber and storage integration are new concentrating solar power materials.SiC composite ceramics for solar absorber and storage integration were fabricated using SiC,black corundum and kaolin as the raw materials,Co_(2)O_(3)as the additive via pressureless graphite-buried sintering method in this study.Influences of Co_(2)O_(3)on the microstructure and properties of SiC composite ceramics for solar absorber and storage integration were studied.The results indicate that sample D2(5wt%Co_(2)O_(3))sintered at 1480℃exhibits optimal performances for 119.91 MPa bending strength,93%solar absorption,981.5 kJ/kg(25-800℃)thermal storage density.The weight gain ratio is 12.58 mg/cm2after 100 h oxidation at 1000℃.The Co_(2)O_(3)can decrease the liquid phase formation temperature and reduce the viscosity of liquid phase during sintering.The liquid with low viscosity not only promotes the elimination of pores to achieve densification,but also increases bending strength,solar absorption,thermal storage density and oxidation resistance.A dense SiO_(2) layer was formed on the surface of SiC after 100 h oxidation at 1000℃,which protects the sample from further oxidation.However,excessive Co_(2)O_(3)will make the microstructure loose,which is disadvantageous to the performances of samples.

Mechanical Properties and Microstructure of Al_(2)O_(3)/SiC Composite Ceramics for Solar Heat Absorber

Al_(2)O_(3)/SiC composite ceramics were prepared fromα-Al_(2)O_(3) and SiC by a pressureless sinter method in this study.The effect of SiC contents on the mechanic properties,phase compositions and microstructure is studied.Experimental results show that the vickers hardness,wear resistance and thermal conductivity of the samples increase with the increase in the SiC content,and the hardness of the sample reaches 16.22 GPa,and thermal conductivity of the sample reaches 25.41 W/(m.K)at room temperature when the SiC content is 20 wt%(B5)and the sintering temperature is at 1640℃.Higher hardness means higher scour resistance,and it indicates that the B5 material is expected to be used for the solar heat absorber of third generation solar thermal generation.The results indicate the mechanism of improving mechanical properties of Al_(2)O_(3)/SiC composite ceramics:SiC plays a role in grain refinement that the grain of SiC inhibits the grain growth of Al_(2)O_(3),while the addition of SiC changes the fracture mode from the intergranular to the intergranular-transgranular.

Vacuum brazing of Si/SiC ceramic composite and Invar alloy using TiSOCu-W filler metals

Si/SiC ceramic composite and lnvar alloy were successfidly joined by vacuum brazing using Ti5OCu-W filler metals into which W was added to release the thermal stress of the brazed joint. Microstructures of the brazed joints were irwestigated by scanning electron micrascope （SEM） and energy dispersive spectrometer （EDS）. The mechanical properties of the brazed joints were measured by shearing tests. The results showed that the brazed joints were composed of Ti-Cu phase, W phase and Ti-Si phase. W had no effect on the wettability and mobility of the .filler metals. The growth of Ti2 Cu phase was restrained, and the reaction between ceramic composite and filler metals was weakened. The specimen, brazed at 970°C for 5 rain, had the maximum shear strength of 108 MPa at room temperature.

Comparison of K_(IC) Values for SiC Whisker Reinforced Ceramic Composites Obtained by Using Various Methods

The fracture toughness (KIC) values determined by indentation microfracture method (IM ) for SiC whisker reinforced Al2O3 and ZrO2 based composites were calculated with different IM equations and compared with those obtained by singte edge notched beam (SENB) technique. Experimental results show that the KIC (IM) values calculated with different equations are quite different one from another. For composites without phase transformable components the KIC (IM) and KIC (SENB) values are practically on the same level, but for composites with phase transformable components (partially stabilized zirconia) the KIC (SENB) values are always higher than KIC (IM). This is because that the IM method can not reveal sensitively the toughening effect due to dynamic t-m transformation of ZrO2 as the SENB method does. The accuracy of the IM method depends on the Suitability of the IM equations and was evaluated for the materials used in this investigation. Two new IM equations are suggested with which the KIC (IM ) values can be obtained very close to KIC (SENB) values for composites having phase transformable components.

Rare earth monosilicates as oxidation resistant interphase for SiCf/SiC CMC:Investigation of SiC_(f)/Yb_(2)SiO_(5)model composites

Model composites consisting of SiC fiber and Yb_(2)SiO_(5)were processed by the spark plasma sintering(SPS)method.The mechanical compatibility and chemical stability between Yb_(2)SiO_(5)and SiC fiber were studied to evaluate the potential application of Yb monosilicate as the interphase of silicon carbide fiber reinforced silicon carbide ceramic matrix composite(SiC_(f)/SiC CMC).Two kinds of interfaces,namely mechanical and chemical bonding interfaces,were achieved by adjusting sintering temperature.SiC_(f)/Yb_(2)SiO_(5)interfaces prepared at 1450 and 1500℃exhibit high interface strength and debond energy,which do not satisfy the crack deflection criteria based on He-Hutchison diagram.Raman spectrum analyzation indicates that the thermal expansion mismatch between Yb_(2)SiO_(5)and SiC contributes to high compressive thermal stress at interface,and leads to high interfacial parameters.Amorphous layer at interface in model composite sintered at 1550℃is related to the diffusion promoted by high temperature and DC electric filed during SPS.It is inspired that the interfacial parameters could be adjusted by introducing Yb_(2)Si_(2)O_(7)-Yb_(2)SiO_(5)interphase with controlled composition to optimize the mechanical fuse mechanism in SiC_(f)/SiC CMC.