Electron Spectroscopy Studies on SiC Films before and after Hydrogen Ion Irradiation

The ion beam mixing prepared SiC films on stainless steel substrates were irradiated by hydrogen ion beam with an energy of 5 keV to a dose of 1 x 10(18) ions/cm(2). AES and XPS were used for the characterization of chemical bonding states of C and Si elements in SiC films as well as contamination oxygen before and after hydrogen ion irradiation in order to study the effect of hydrogen ion irradiation on SiC films and to understand oxygen behaviors in the SiC films prepared with ion beam mixing. The results shou, that contamination oxygen can react with silicon to form silicon oxides, and more oxygen entered into the films during hydrogen ion irradiation. In addition, oxygen also reacts with carbon related hydrogen to form species including carbon, hydrogen and oxygen.

Photoluminescence Properties of Nanocrystalline 3C-SiC Films

Nanocrystalline （nc） 3C-SiC films on the Si substrate were prepared by the helicon wave plasma enhanced chemical vapor deposition （HW-PECVD） technique. With the SiH4-CH4 gas flow ratio changing, the films exhibit different photoluminescence （PL） characteristics. Under the stoichiometric condition, the PL peak redshift from 470 nm to 515 nm is detected with the increase of excitation wavelength, which can be attributed to the quantum confinement effect radiation of 3C-SiC nanocrystals of different sizes. However, the appearance of an additional PL band at 436 nm in Si-rich film might be sourced back to the excess of Si defect centers in it. This is also the case for C-rich film for its PL band lying at 570 nm. The results above quoted indicate an important influence of gas flow ratio on the PL properties of the SiC films providing an effective guidance for analyzing the luminescence mechanism and exploring the high-efficiency light emission of the SiC films.

INVESTIGATION ON DEPOSITIONS AND HARDNESS CHARACTERISTICS OF a-SiC:H FILMS

In this paper, a deposition feature of a SiC:H films deposited by a RF sputtering system and a effect on the hardness of the films with various deposition conditions are investigated, and the effects of the silicon on a C:H are studied. It follows from the results that the properties of hardness can be changed with the depositing conditions. An increase of silane in the gas phase allows to deposit a SiC:H having tetrahedral structure. The sets of deposition conditions by which the different types of a SiC:H films can be deposited are obtained.

Influence of CH_3SiCl_3 Consistency on Growth Process of SiC Film by Kinetic Monte Carlo Method

CH3SiCl3 （MTS）-H2-Ar system has been applied to prepare SiC film with chemical vapor deposition （CVD） method in this paper. For three facets of SiC film, some significant influence on growth rate, surface roughness, thickness and relative density brought by MTS consistency has been mainly discussed with kinetic monte carlo （KMC） method. The simulation results show that there is a certain scale for mol ratio of H2 to MTS （H2/MTS） with different deposition temperature. When MTS consistency increases, growth rate and surface roughness of three facets all increase, which manifests approximate linearity relationship. Thickness of three facets also increases while increasing trend of three facets thickness is different obviously. Although relative density of three facets all increases, increasing trend shows a little difference with MTS consistency increasing.