Synthesis of SiC/graphene nanosheet composites by helicon wave plasma

We report an approach to the rapid, one-step, preparation of a variety of wide-bandgap silicon carbide/graphene nanosheet(Si C/GNSs) composites by using a high-density helicon wave plasma(HWP) source. The microstructure and morphology of the Si C/GNSs are characterized by using scanning electron microscopy(SEM), Raman spectroscopy, x-ray diffraction(XRD), x-ray photoelectron spectroscopy(XPS), and fluorescence(PL). The nucleation mechanism and the growth model are discussed. The existence of Si C and graphene structure are confirmed by XRD and Raman spectra.The electron excitation temperature is calculated by the intensity ratio method of optical emission spectroscopy. The main peak in the PL test is observed at 420 nm, with a corresponding bandgap of 2.95 e V that indicates the potential for broad application in blue light emission and ultraviolet light emission, field electron emission, and display devices.

Comparative Study of Monolayer and Bilayer Epitaxial Graphene Field-Effect Transistors on SiC Substrates

Monolayer and bilayer graphenes have generated tremendous excitement as the potentially useful electronic materials due to their unique features. We report on monolayer and bilayer epitaxial graphene field-effect transistors （GFETs） fabricated on SiC substrates. Compared with monolayer GFETs, the bilayer GFETs exhibit a significant improvement in dc characteristics, including increasing current density I DS, improved transconductance g m, reduced sheet resistance lion, and current saturation. The improved electrical properties and tunable bandgap in the bilayer graphene lead to the excellent dc performance of the bilayer GFETs. Furthermore, the improved dc characteristics enhance a better rf performance for bilayer graphene devices, demonstrating that the quasifree-standing bilayer graphene on SiC substrates has a great application potential for the future graphene-based electronics.

Na Induced Changes in the Electronic Band Structure of Graphene Grown on C-Face SiC

Studies of the effects induced on the electron band structure after Na deposition, and subsequent heating, on a C-face 2 MLs graphene sample are reported. Na deposition shifts the Dirac point downwards from the Fermi level by about 0.5 eV due to electron doping. After heating at temperatures from around 120℃ to 300℃,thep-band appears considerably broadened. Collected Si 2p and Na 2p spectra then indicate Na intercalation in between the graphene layers and at the graphene SiC interface. The broadening is therefore interpreted to arise from the presence of two slightly shifted, but not clearly resolved,p-bands. Constant energy photoelectron distribution patterns, E(kx,ky);s, extracted from the clean 2MLs graphene C-face sample look very similar to earlier calculated distribution patterns for monolayer, but not Bernal stacked bilayer, graphene. After Na deposition the patterns extracted at energies below the Dirac point appear very similar so the doping had no pronounced effect on the shape or intensity distribution. At energies above the Dirac point the extracted angular distribution patterns show the flipped, “mirrored”, intensity distribution predicted for monolayer graphene at these energies. An additional weaker outer band is also discernable at energies above the Dirac point, which presumably is induced by the deposited Na.

镧对Cu/Ti_3SiC_2/C/MWCNTs/Graphene/La纳米复合材料摩擦学性能的影响（英文）

研究采用真空热压及热等静压方法制备Cu/Ti_3SiC_2/C/MWCNTs/Graphene/La纳米复合材料,采用摩擦磨损试验机研究对磨材料为GCr15时,镧含量对Cu/Ti_3SiC_2/C/MWCNTs/Graphene/La纳米复合材料的摩擦学性能的影响。研究了镧含量、正应力及旋转速度对纳米复合材料摩擦学行为的影响并揭示其相互作用机理,采用正交试验分析、方差分析及极差分析法来分析镧含量、正应力及旋转速度的相互作用。采用扫描电镜和能谱仪观察并分析磨损表面及磨削的形态及成分组分。结果表明,镧对纳米复合材料的摩擦磨损性能起到首要作用,当镧的质量分数为0.05%时,复合材料的磨损机理为磨粒磨损、剥层磨损和氧化磨损,而当镧的质量分数为0.1%和0.3%时,复合材料的磨损机理为粘着磨损和氧化磨损。

Graphene/SiC-coated textiles with excellent electromagnetic interference shielding,Joule heating,high-temperature resistance,and pressure-sensing performances

Multifunctional,wearable,and durable textiles integrated with smart electronics have attracted tremendous attention.However,it remains a great challenge to balance new functionalities with high-temperature stability.Herein,textile-based pressure sensors with excellent electromagnetic interference(EMI)shielding,Joule heating,and high-temperature resistance were fabricated by constructing graphene/SiC(G/SiC)heterostructures on carbon cloth via laser chemical vapor deposition(LCVD).The resultant textiles exhibited excellent EMI efficiency of 74.2 dB with a thickness of 0.45 mm,Joule heating performance within a low working voltage(V)range of 1-3 V,and fast response time within 20 s.These properties arose from multiple reflections,interfacial polarization,and high conductivity due to the numerous amounts of nanoscale G/SiC heterostructures.More importantly,G/SiC/carbon fibers(CFs)demonstrated well high-temperature resistance with a heat resistance index(THri)of 380.2 C owing to the protection of a coating layer on the CFs upon oxidation.Meanwhile,the G/SiC/CFs presented good pressure-sensing performance with high sensitivity(S)of 52.93 kPal,fast response time of 85 ms,and a wide pressure range of up to 186 kPa.These features imply the potential of the G/SiC/CFs as efficient EMI shielding,electrical heater,and piezoresistive sensor textiles.