SiC thin-films were prepared by RF-magnetron sputtering technique(RMS) with the target of single crystalline SiC and then annealed. The surface morphology of thin-films was characterized by AFM. The result shows that ...SiC thin-films were prepared by RF-magnetron sputtering technique(RMS) with the target of single crystalline SiC and then annealed. The surface morphology of thin-films was characterized by AFM. The result shows that the surface of the thin-films is smooth and compact; XRD analysis reveals that the thin-films are amorphous. The thickness, square-resistance and curves of resistance—temperature were measured. The results show that the curves of lnR versus 1/kT both before and after annealing satisfy the expression of lnR∝△W/kT, where ?W is electron excitation energy in the range of 0.014 2-0.018 5 eV, and it has a trend of increasing when the temperature is increased. After synthetical analysis we get the conclusion that the electronic mechanism of the thin-films is short distance transition between the localized states in the temperature range of 25-250 ℃. The resistivity is in the range of 2.4×10-3-4.4×10-3 Ω·cm and it has the same trend as electron excitation energy when annealing temperature is increased, which further confirms the electronic mechanism of thin-films and the trend of electron excitation energy versus annealing temperature.展开更多
We report the performances of a chalcopyrite Cu(In, Ga)Se<sub>2 </sub>CIGS-based thin-film solar cell with a newly employed high conductive n-Si layer. The data analysis was performed with the help of the ...We report the performances of a chalcopyrite Cu(In, Ga)Se<sub>2 </sub>CIGS-based thin-film solar cell with a newly employed high conductive n-Si layer. The data analysis was performed with the help of the 1D-Solar Cell Capacitance Simulator (1D-SCAPS) software program. The new device structure is based on the CIGS layer as the absorber layer, n-Si as the high conductive layer, i-In<sub>2</sub>S<sub>3</sub>, and i-ZnO as the buffer and window layers, respectively. The optimum CIGS bandgap was determined first and used to simulate and analyze the cell performance throughout the experiment. This analysis revealed that the absorber layer’s optimum bandgap value has to be 1.4 eV to achieve maximum efficiency of 22.57%. Subsequently, output solar cell parameters were analyzed as a function of CIGS layer thickness, defect density, and the operating temperature with an optimized n-Si layer. The newly modeled device has a p-CIGS/n-Si/In<sub>2</sub>S<sub>3</sub>/Al-ZnO structure. The main objective was to improve the overall cell performance while optimizing the thickness of absorber layers, defect density, bandgap, and operating temperature with the newly employed optimized n-Si layer. The increase of absorber layer thickness from 0.2 - 2 µm showed an upward trend in the cell’s performance, while the increase of defect density and operating temperature showed a downward trend in solar cell performance. This study illustrates that the proposed cell structure shows higher cell performances and can be fabricated on the lab-scale and industrial levels.展开更多
基金Project(60371046) supported by the National Natural Science Foundation of China
文摘SiC thin-films were prepared by RF-magnetron sputtering technique(RMS) with the target of single crystalline SiC and then annealed. The surface morphology of thin-films was characterized by AFM. The result shows that the surface of the thin-films is smooth and compact; XRD analysis reveals that the thin-films are amorphous. The thickness, square-resistance and curves of resistance—temperature were measured. The results show that the curves of lnR versus 1/kT both before and after annealing satisfy the expression of lnR∝△W/kT, where ?W is electron excitation energy in the range of 0.014 2-0.018 5 eV, and it has a trend of increasing when the temperature is increased. After synthetical analysis we get the conclusion that the electronic mechanism of the thin-films is short distance transition between the localized states in the temperature range of 25-250 ℃. The resistivity is in the range of 2.4×10-3-4.4×10-3 Ω·cm and it has the same trend as electron excitation energy when annealing temperature is increased, which further confirms the electronic mechanism of thin-films and the trend of electron excitation energy versus annealing temperature.
文摘We report the performances of a chalcopyrite Cu(In, Ga)Se<sub>2 </sub>CIGS-based thin-film solar cell with a newly employed high conductive n-Si layer. The data analysis was performed with the help of the 1D-Solar Cell Capacitance Simulator (1D-SCAPS) software program. The new device structure is based on the CIGS layer as the absorber layer, n-Si as the high conductive layer, i-In<sub>2</sub>S<sub>3</sub>, and i-ZnO as the buffer and window layers, respectively. The optimum CIGS bandgap was determined first and used to simulate and analyze the cell performance throughout the experiment. This analysis revealed that the absorber layer’s optimum bandgap value has to be 1.4 eV to achieve maximum efficiency of 22.57%. Subsequently, output solar cell parameters were analyzed as a function of CIGS layer thickness, defect density, and the operating temperature with an optimized n-Si layer. The newly modeled device has a p-CIGS/n-Si/In<sub>2</sub>S<sub>3</sub>/Al-ZnO structure. The main objective was to improve the overall cell performance while optimizing the thickness of absorber layers, defect density, bandgap, and operating temperature with the newly employed optimized n-Si layer. The increase of absorber layer thickness from 0.2 - 2 µm showed an upward trend in the cell’s performance, while the increase of defect density and operating temperature showed a downward trend in solar cell performance. This study illustrates that the proposed cell structure shows higher cell performances and can be fabricated on the lab-scale and industrial levels.
