A silicon carbide (SiC) vertical channel junction field effect transistor (VJFET) was fabricated based on in-house SiC epitaxial wafer with trenched and implanted method. Its forward drain current is in excess of 3.12...A silicon carbide (SiC) vertical channel junction field effect transistor (VJFET) was fabricated based on in-house SiC epitaxial wafer with trenched and implanted method. Its forward drain current is in excess of 3.12 A (170 W/cm2) with a current gain of ID/IG = 19746 at gate bias VG = 3 V and drain bias VD = 5.5 V. The SiC VJFET device’s related specific on-resistance 54 mΩ·cm2. The BV gain is 250 V with Vg from -10 V to -4 V and is 350 V with Vg from -4 V to -2 V. Self-aligned floating guard rings provide edge termination that blocks 3180V at a gate bias of ?14 V and a drain-current density of 1.53 mA/cm2.展开更多
英飞凌近日宣布推出第五代650 V thinQ!TM SiC肖特基势垒二极管,壮大其SiC产品阵容。英飞凌荣获专利的扩散焊接工艺早已应用于第三代产品,如今又成功地与更紧凑的全新设计和最新的薄晶圆技术有机结合在一起,改进了热特性,并使一个优值系...英飞凌近日宣布推出第五代650 V thinQ!TM SiC肖特基势垒二极管,壮大其SiC产品阵容。英飞凌荣获专利的扩散焊接工艺早已应用于第三代产品,如今又成功地与更紧凑的全新设计和最新的薄晶圆技术有机结合在一起,改进了热特性,并使一个优值系数(Qc x Vf)与英飞凌前代SiC二极管相比降低了大约30%。展开更多
文摘A silicon carbide (SiC) vertical channel junction field effect transistor (VJFET) was fabricated based on in-house SiC epitaxial wafer with trenched and implanted method. Its forward drain current is in excess of 3.12 A (170 W/cm2) with a current gain of ID/IG = 19746 at gate bias VG = 3 V and drain bias VD = 5.5 V. The SiC VJFET device’s related specific on-resistance 54 mΩ·cm2. The BV gain is 250 V with Vg from -10 V to -4 V and is 350 V with Vg from -4 V to -2 V. Self-aligned floating guard rings provide edge termination that blocks 3180V at a gate bias of ?14 V and a drain-current density of 1.53 mA/cm2.
文摘英飞凌近日宣布推出第五代650 V thinQ!TM SiC肖特基势垒二极管,壮大其SiC产品阵容。英飞凌荣获专利的扩散焊接工艺早已应用于第三代产品,如今又成功地与更紧凑的全新设计和最新的薄晶圆技术有机结合在一起,改进了热特性,并使一个优值系数(Qc x Vf)与英飞凌前代SiC二极管相比降低了大约30%。
