The effect of the pyrolytic carbon(PyC)interface thickness on the heat-stability of CansasⅡSiC_(f)/SiC composites under Ar up to 1500℃was studied in detail.After the heat treatment at 1500℃for 50 h,the interface bo...The effect of the pyrolytic carbon(PyC)interface thickness on the heat-stability of CansasⅡSiC_(f)/SiC composites under Ar up to 1500℃was studied in detail.After the heat treatment at 1500℃for 50 h,the interface bonding strength of the thin interface(about 200 nm)decreases from 74.4 to 20.1 MPa(73.0%),while that of the thick interface(about 2μm)declines from 7.3 to 3.2 MPa(52.7%).At the same time,the decline fraction of strength of the composites with the thin interface is 12.1%,less than that with the thick interface(42.0%).The fiber strength also decreases after heat treatment,which may be due to the significant growth ofβ-SiC grains and critical defects.The different heat-stability of the interface with the thin and thick thickness might be related to the inconsistency of the degree of the graphitization of PyC.Compared with the composites with the thick interface,the composites with the thin interface remained higher tensile strength after heat treatment due to the better interface bonding strength.The interface with strong bonding strength could protect the fiber by postponing the decomposition of amorphous phases SiC_(x)O_(y) and hindering the generation of fiber defects.展开更多
Compound casting is an efficient method for bonding dissimilar metals,in which a dramatic reaction can occur between the melt and solid.The centrifugal casting process,a type of compound casting,was applied to cast Al...Compound casting is an efficient method for bonding dissimilar metals,in which a dramatic reaction can occur between the melt and solid.The centrifugal casting process,a type of compound casting,was applied to cast Al/Mg dissimilar bimetals.Magnesium melt was poured at 700 °C,with melt-to-solid volume ratios(Vm/Vs) of 1.5 and 3,into a preheated hollow aluminum cylinder.The preheating temperatures of the solid part were 320,400,and 450 °C,and the constant rotational speed was 1,600 rpm.The cast parts were kept inside the casting machine until reaching the cooling temperature of 150 °C.The result showed that an increase in preheating temperature from 320 to 450 °C led to an enhanced reaction layer thickness.In addition,an increase in the Vm/Vs from 1.5 to 3 resulted in raising the interface thickness from 1.2 to 1.8 mm.Moreover,the interface was not continuously formed when a Vm/Vs of 3 was selected.In this case,the force of contraction overcame the resultant acting force on the interface.An interface formed at the volume ratio of 1.5 was examined using scanning electron microscopy(SEM) equipped with energy-dispersive X-ray spectroscopy(EDS),and the results demonstrated the formation of Al_(3)Mg_(2),Al_(12)Mg_(17) and(δ+Al_(12)Mg_(17)) eutectic structures in the interface.展开更多
The interface structure and electronic properties of Fe(110)/Al(110) are investigated by the first-principles plane-wave pseudopotential method. The interface segregation position of Si and Mg is determined, and the e...The interface structure and electronic properties of Fe(110)/Al(110) are investigated by the first-principles plane-wave pseudopotential method. The interface segregation position of Si and Mg is determined, and the effect of Mg and Si on the interface binding of Fe(110)/Al(110) is analyzed by combining the work of separation and charge density. The results show that the Fe(110)/Al(110) interface energy of FeHollow coordination is smaller and the interface structure is more stable. The Fe(110)/Al(110) interface separation surface in the form of Fe-Hollow coordination appears at the sub interface layer on the side of Al(110)near the interface. The interface structure of Mg and Si segregation is similar to that of undoped alloy elements.The calculations also suggest that Mg and Si segregate on the Al(110) side of the interface and occupy the Al lattice on the Al(110) side. The segregation of Mg and Si elements will reduce the interface binding, primarily because the Fe-Si bond and Fe-Mg bond are weaker than Fe-Al bond.展开更多
The effects of interface shape on stress wave distribution and attenuation were investiga- ted using finite element method （ FEM ）. The simulation results indicate that when the stress wave propagates from SiC ceram...The effects of interface shape on stress wave distribution and attenuation were investiga- ted using finite element method （ FEM ）. The simulation results indicate that when the stress wave propagates from SiC ceramic to A1 alloy, the tensile stress decreases and the attenuation coefficient of the stress wave increases with increasing central angle of the concave interface between SiC and A1. But for the convex interface, the tensile stress increases and attenuation coefficient decreases with increasing central angle. As the stress wave propagates from A1 alloy to SiC ceramic, the atten- uation coefficient of stress wave decreases with increasing the central angle of the concave interface. For the convex interface, the attenuation coefficient increases with increasing central angle.展开更多
This paper studies two-dimensional analysis of the surface state effect on current gain for a 4H-SiC bipolar junction transistor （BJT）. Simulation results indicate the mechanism of current gain degradation, which is...This paper studies two-dimensional analysis of the surface state effect on current gain for a 4H-SiC bipolar junction transistor （BJT）. Simulation results indicate the mechanism of current gain degradation, which is surface Fermi level pinning leading to a strong downward bending of the energy bands to form the channel of surface electron recombination current. The experimental results are well-matched with the simulation, which is modeled by exponential distributions of the interface state density replacing the single interface state trap. Furthermore, the simulation reveals that the oxide quality of the base emitter junction interface is very important for 4H-SiC BJT performance.展开更多
For the manufacture of Al-based metalmatrix composites, the foundry productionroute can provide less expensive products witha greater flexibility in meeting designer’s needsamong a vaviety of fablication routes. Rece...For the manufacture of Al-based metalmatrix composites, the foundry productionroute can provide less expensive products witha greater flexibility in meeting designer’s needsamong a vaviety of fablication routes. Recent-ly, a commercially produced foundry ingot,the Duralcan composite of A356 Al alloy +20展开更多
On the basis of first principles calculations, we report that the type and density of charge carriers of epitaxial graphene on SiC（O001） can be deliberately controlled by decorating the buffer layer with specific at...On the basis of first principles calculations, we report that the type and density of charge carriers of epitaxial graphene on SiC（O001） can be deliberately controlled by decorating the buffer layer with specific atoms （i.e., F, C1, O, or N）. More importantly, a fine tuning of the doping behavior from intrinsic n-type to charge neutrality to p-type and interface magnetism is achieved via increasing the doping concentration of F atoms on the buffer layer. Our results suggest an interesting avenue to the application of epitaxial graphene in nanoscale electronic and spintronic devices.展开更多
Effective improvement in electrical properties of NO passivated SiC/SiO2 interface after being irradiated by electrons is demonstrated.The density of interface traps after being irradiated by 100-kGy electrons decreas...Effective improvement in electrical properties of NO passivated SiC/SiO2 interface after being irradiated by electrons is demonstrated.The density of interface traps after being irradiated by 100-kGy electrons decreases by about one order of magnitude,specifically,from 3×1012 cm-2·eV-1 to 4×1011 cm-2·eV-1 at 0.2 eV below the conduction band of 4H-SiC without any degradation of electric breakdown field.Particularly,the results of x-ray photoelectron spectroscopy measurement show that the C-N bonds are generated near the interface after electron irradiation,indicating that the carbon-related defects are further reduced.展开更多
Near-interface oxide traps （NIOTs） in 4H-SiC metal-oxide-semiconductor （MOS） structures fabricated with and without annealing in NO are systematically investigated in this paper. The properties of NIOTs in SiC MOS...Near-interface oxide traps （NIOTs） in 4H-SiC metal-oxide-semiconductor （MOS） structures fabricated with and without annealing in NO are systematically investigated in this paper. The properties of NIOTs in SiC MOS structures prepared with and without annealing in NO are studied and compared in detail. Two main categories of the NIOTs, the “slow” and “fast” NIOTs, are revealed and extracted. The densities of the “fast” NIOTs are determined to be 0.761011 cm-2 and 0.471011 cm-2 for the N2 post oxidation annealing （POA） sample and NO POA sample, respectively. The densities of “slow” NIOTs are 0.791011 cm-2 and 9.441011 cm-2 for the NO POA sample and N2 POA sample, respectively. It is found that the NO POA process only can significantly reduce “slow” NIOTs. However, it has a little effect on “fast” NIOTs. The negative and positive constant voltage stresses （CVS） reveal that electrons captured by those “slow” NIOTs and bulk oxide traps （BOTs） are hardly emitted by the constant voltage stress.展开更多
Mg/Al bimetal combines the advantages of both aluminum and magnesium and has broad application prospects in automotive, aerospace,weapons, digital products and so on. The compound casting has the characteristics of lo...Mg/Al bimetal combines the advantages of both aluminum and magnesium and has broad application prospects in automotive, aerospace,weapons, digital products and so on. The compound casting has the characteristics of low cost, easy to achieve metallurgical combination and suitable for the preparation of complex bimetallic parts. However, bimetallic joint strength is low due to differences of physical properties between Al and Mg, oxide film on metallic surface and interfacial Al-Mg IMCs, which is closely related to the interfacial microstructure and properties. Therefore, how to control the interface of the bimetal to achieve performance enhancement is the focus and difficulty in this field. At present, there are mainly the following strengthening methods. First, the “zincate galvanizing” and “electrolytic polishing+anodic oxidation” technology were exert on the surface of Al alloy to remove and break the oxide film, which improved the wettability between Al and Mg. Second, the undesirable Al-Mg IMCs were reduce or elimination by adding the interlayers(Zn, Ni and Ni-Cu). Thirdly, the evolution process of interfacial microstructure was changed and fine strengthening phases were formed by adding Si element to Al alloy or rare earth element to Mg alloy. Fourthly, mechanical vibration and ultrasonic vibration were applied in the process of the filling and solidification to refine and homogenize the interfacial structure. Finally, some other methods, including secondary rolling, thermal modification, heat treatment and constructing exterior 3D morphology, also can be used to regulate the interfacial microstructure and compositions. The above strengthening methods can be used alone or in combination to achieve bimetallic strengthening. Finally, the future development direction of the Mg/Al bimetal is prospected, which provides some new ideas for the development and application of the Mg/Al bimetal.展开更多
The matrix accumulative roll bonding technology （MARB） can improve the matrix performance of metal composite and strengthen the bonding quality of the interface./n this research, for the fwst time, the technology of...The matrix accumulative roll bonding technology （MARB） can improve the matrix performance of metal composite and strengthen the bonding quality of the interface./n this research, for the fwst time, the technology of MARB was proposed. A sound Cu/AI bonding composite was obtained using the MARB process and the bonding characteristic of the interface was studied using scanning electricity microscope （SEM） and energy-dispersive spectroscopy （EDS）. The result indicated that accumulation cycles and diffusion annealing temperature were the most important factors for fabricating a Cu/AI composite material. The substrate aluminum was strengthened by MARB, and a high quality Cu/AI composite with sound interface was obtained as well.展开更多
Cu/Al bar clad material was fabricated by a drawing process and a subsequent heat treatment.During these processes,intermetallic compounds have been formed at the interface of Cu/Al and have affected its bonding prope...Cu/Al bar clad material was fabricated by a drawing process and a subsequent heat treatment.During these processes,intermetallic compounds have been formed at the interface of Cu/Al and have affected its bonding property.Microstructures of Cu/Al interfaces were observed by OM,SEM and EDX Analyser in order to investigate the bonding properties of the material.According to the microstructure a series of diffusion layers were observed at the interface and the thicknesses of diffusion layers have increased with aging time as a result of the diffusion bonding.The interfaces were composed of 3-ply diffusion layers and their compositions were changed with aging time at 400 °C.These compositional compounds were revealed to be η2,(θ+η2),(α+θ) intermetallic phases.It is evident from V-notch impact tests that the growth of the brittle diffusion layers with the increasing aging time directly influenced delamination distance between the Cu sleeve and the Al core.It is suggested that the proper holding time at 400 °C for aging as post heat treatment of a drawn Cu/Al bar clad material would be within 1 h.展开更多
The interface reaction between the SiC particles （ SiCp ） and Fe was stndicd during sintering the SiCp reinforced Fe matrix composites at 1423 K for 1 h. In the composite having 3wt% （weight ratio） SiCp （the 3SiC...The interface reaction between the SiC particles （ SiCp ） and Fe was stndicd during sintering the SiCp reinforced Fe matrix composites at 1423 K for 1 h. In the composite having 3wt% （weight ratio） SiCp （the 3SiCp/ Fe composite）, the interface reaction products of Fe3 Si, the carbon precipitates, and Fe3 C or pearlite were generated. Fe3 Si coustructs the bright matrix of the reaction zone in the original situation of the SiCp. The carbon precipitates are randondy embedded in the reaction zone. Fe3 C or pearlite exists at the grain boundaries of the Fe matrix. As increasing the SiCp concentration in the SiCp/ Fe composite, the inteusity of the interface reaction between SiCp and Fe iacreases. After the 10SiCp/ Fe composite （ having 10wt .% SiCp ） sintered at 1423 K for 1 h, all of SiCp are decomposed, and replaced by the reaction zone composed of Fe3 Si and the carbon precipitates. No Fe3 C or pearlite was genertaed during the reaction. The effects of the techniques of oxidizing of SiCp , coating SiCp by interaction with the Cr powder, and alloying the Fe matrix by adding the Cr element on the interface stability of the SiCp/ Fe composite system were also investigated, respectitely. The oxide membrane and the coating layer on SiCp can inhibit the interface reaction between SiCp and Fe by isolating SiCp from the Fe matrix during sintering. The interface reaction does not occur in the 3 SiCp/ Fe- 10 Cr composite but in the 3 SiCp/ Fe-5 Cr composite. In the SiCp/ Fe-Cr alloy composites, the interface reaction between SiCp and the Fe- Cr alloys is weaker than that between SiCp and Fe . The Cr element behaves as a diluent, it causes a redaction in the interface reaction, which is proportional to the amount of the element added.展开更多
基金Funded by the National Science and Technology Major Project(No.2017-IV-0005-0042)the China Postdoctoral Science Foundation(No.2021M691566)。
文摘The effect of the pyrolytic carbon(PyC)interface thickness on the heat-stability of CansasⅡSiC_(f)/SiC composites under Ar up to 1500℃was studied in detail.After the heat treatment at 1500℃for 50 h,the interface bonding strength of the thin interface(about 200 nm)decreases from 74.4 to 20.1 MPa(73.0%),while that of the thick interface(about 2μm)declines from 7.3 to 3.2 MPa(52.7%).At the same time,the decline fraction of strength of the composites with the thin interface is 12.1%,less than that with the thick interface(42.0%).The fiber strength also decreases after heat treatment,which may be due to the significant growth ofβ-SiC grains and critical defects.The different heat-stability of the interface with the thin and thick thickness might be related to the inconsistency of the degree of the graphitization of PyC.Compared with the composites with the thick interface,the composites with the thin interface remained higher tensile strength after heat treatment due to the better interface bonding strength.The interface with strong bonding strength could protect the fiber by postponing the decomposition of amorphous phases SiC_(x)O_(y) and hindering the generation of fiber defects.
文摘Compound casting is an efficient method for bonding dissimilar metals,in which a dramatic reaction can occur between the melt and solid.The centrifugal casting process,a type of compound casting,was applied to cast Al/Mg dissimilar bimetals.Magnesium melt was poured at 700 °C,with melt-to-solid volume ratios(Vm/Vs) of 1.5 and 3,into a preheated hollow aluminum cylinder.The preheating temperatures of the solid part were 320,400,and 450 °C,and the constant rotational speed was 1,600 rpm.The cast parts were kept inside the casting machine until reaching the cooling temperature of 150 °C.The result showed that an increase in preheating temperature from 320 to 450 °C led to an enhanced reaction layer thickness.In addition,an increase in the Vm/Vs from 1.5 to 3 resulted in raising the interface thickness from 1.2 to 1.8 mm.Moreover,the interface was not continuously formed when a Vm/Vs of 3 was selected.In this case,the force of contraction overcame the resultant acting force on the interface.An interface formed at the volume ratio of 1.5 was examined using scanning electron microscopy(SEM) equipped with energy-dispersive X-ray spectroscopy(EDS),and the results demonstrated the formation of Al_(3)Mg_(2),Al_(12)Mg_(17) and(δ+Al_(12)Mg_(17)) eutectic structures in the interface.
基金the National Natural Science Foundation of China(No.51871030)the Higher Education Science Foundation of Jiangsu Province of China (No.17KJA430006)。
文摘The interface structure and electronic properties of Fe(110)/Al(110) are investigated by the first-principles plane-wave pseudopotential method. The interface segregation position of Si and Mg is determined, and the effect of Mg and Si on the interface binding of Fe(110)/Al(110) is analyzed by combining the work of separation and charge density. The results show that the Fe(110)/Al(110) interface energy of FeHollow coordination is smaller and the interface structure is more stable. The Fe(110)/Al(110) interface separation surface in the form of Fe-Hollow coordination appears at the sub interface layer on the side of Al(110)near the interface. The interface structure of Mg and Si segregation is similar to that of undoped alloy elements.The calculations also suggest that Mg and Si segregate on the Al(110) side of the interface and occupy the Al lattice on the Al(110) side. The segregation of Mg and Si elements will reduce the interface binding, primarily because the Fe-Si bond and Fe-Mg bond are weaker than Fe-Al bond.
基金Supported by the National Basic Research Program of China("973" Program)(613135)
文摘The effects of interface shape on stress wave distribution and attenuation were investiga- ted using finite element method （ FEM ）. The simulation results indicate that when the stress wave propagates from SiC ceramic to A1 alloy, the tensile stress decreases and the attenuation coefficient of the stress wave increases with increasing central angle of the concave interface between SiC and A1. But for the convex interface, the tensile stress increases and attenuation coefficient decreases with increasing central angle. As the stress wave propagates from A1 alloy to SiC ceramic, the atten- uation coefficient of stress wave decreases with increasing the central angle of the concave interface. For the convex interface, the attenuation coefficient increases with increasing central angle.
文摘This paper studies two-dimensional analysis of the surface state effect on current gain for a 4H-SiC bipolar junction transistor （BJT）. Simulation results indicate the mechanism of current gain degradation, which is surface Fermi level pinning leading to a strong downward bending of the energy bands to form the channel of surface electron recombination current. The experimental results are well-matched with the simulation, which is modeled by exponential distributions of the interface state density replacing the single interface state trap. Furthermore, the simulation reveals that the oxide quality of the base emitter junction interface is very important for 4H-SiC BJT performance.
文摘For the manufacture of Al-based metalmatrix composites, the foundry productionroute can provide less expensive products witha greater flexibility in meeting designer’s needsamong a vaviety of fablication routes. Recent-ly, a commercially produced foundry ingot,the Duralcan composite of A356 Al alloy +20
基金supported by the National Natural Science Foundation of China(Grant Nos.61335006,61378073,and 61527817)the Beijing Municipal Science and Technology Committee,China(Grant No.Z151100003315006)Fundamental Research Funds for the Central Universities of Beijing Jiaotong University,China(Grant No.2012YJS123)
文摘On the basis of first principles calculations, we report that the type and density of charge carriers of epitaxial graphene on SiC（O001） can be deliberately controlled by decorating the buffer layer with specific atoms （i.e., F, C1, O, or N）. More importantly, a fine tuning of the doping behavior from intrinsic n-type to charge neutrality to p-type and interface magnetism is achieved via increasing the doping concentration of F atoms on the buffer layer. Our results suggest an interesting avenue to the application of epitaxial graphene in nanoscale electronic and spintronic devices.
基金Project supported by the National Key Research and Development Program of China(Grant No.2016YFB0100601)the National Natural Science Foundation of China(Grant Nos.61674169 and 61974159).
文摘Effective improvement in electrical properties of NO passivated SiC/SiO2 interface after being irradiated by electrons is demonstrated.The density of interface traps after being irradiated by 100-kGy electrons decreases by about one order of magnitude,specifically,from 3×1012 cm-2·eV-1 to 4×1011 cm-2·eV-1 at 0.2 eV below the conduction band of 4H-SiC without any degradation of electric breakdown field.Particularly,the results of x-ray photoelectron spectroscopy measurement show that the C-N bonds are generated near the interface after electron irradiation,indicating that the carbon-related defects are further reduced.
基金Project supported by the National Key Basic Research Program of China(Grant No.2015CB759600)the Natural Science Basic Research Plan in Shaanxi Province,China(Grant No.2017JM6003)the National Natural Science Foundation of China(Grant Nos.61774117 61404098 and 61274079)
文摘Near-interface oxide traps （NIOTs） in 4H-SiC metal-oxide-semiconductor （MOS） structures fabricated with and without annealing in NO are systematically investigated in this paper. The properties of NIOTs in SiC MOS structures prepared with and without annealing in NO are studied and compared in detail. Two main categories of the NIOTs, the “slow” and “fast” NIOTs, are revealed and extracted. The densities of the “fast” NIOTs are determined to be 0.761011 cm-2 and 0.471011 cm-2 for the N2 post oxidation annealing （POA） sample and NO POA sample, respectively. The densities of “slow” NIOTs are 0.791011 cm-2 and 9.441011 cm-2 for the NO POA sample and N2 POA sample, respectively. It is found that the NO POA process only can significantly reduce “slow” NIOTs. However, it has a little effect on “fast” NIOTs. The negative and positive constant voltage stresses （CVS） reveal that electrons captured by those “slow” NIOTs and bulk oxide traps （BOTs） are hardly emitted by the constant voltage stress.
基金financially supported by the Major Special Projects in Anhui Province,China(No.202003c08020005)the Key Projects in Hunan Province,China(No.2020GK2045)+1 种基金the Science and Technology Innovation Program of Hunan Province,China(No.2021RC4036)Postgraduate Scientific Research Innovation Project of Hunan Province,China(No.CX20211079)。
基金the supports provided by the National Natural Science Foundation of China (Grant Nos.52271102,52075198 and 52205359)the China Post-doctoral Science Foundation (Grant No.2021M691112)the Analytical and Testing Center,HUST。
文摘Mg/Al bimetal combines the advantages of both aluminum and magnesium and has broad application prospects in automotive, aerospace,weapons, digital products and so on. The compound casting has the characteristics of low cost, easy to achieve metallurgical combination and suitable for the preparation of complex bimetallic parts. However, bimetallic joint strength is low due to differences of physical properties between Al and Mg, oxide film on metallic surface and interfacial Al-Mg IMCs, which is closely related to the interfacial microstructure and properties. Therefore, how to control the interface of the bimetal to achieve performance enhancement is the focus and difficulty in this field. At present, there are mainly the following strengthening methods. First, the “zincate galvanizing” and “electrolytic polishing+anodic oxidation” technology were exert on the surface of Al alloy to remove and break the oxide film, which improved the wettability between Al and Mg. Second, the undesirable Al-Mg IMCs were reduce or elimination by adding the interlayers(Zn, Ni and Ni-Cu). Thirdly, the evolution process of interfacial microstructure was changed and fine strengthening phases were formed by adding Si element to Al alloy or rare earth element to Mg alloy. Fourthly, mechanical vibration and ultrasonic vibration were applied in the process of the filling and solidification to refine and homogenize the interfacial structure. Finally, some other methods, including secondary rolling, thermal modification, heat treatment and constructing exterior 3D morphology, also can be used to regulate the interfacial microstructure and compositions. The above strengthening methods can be used alone or in combination to achieve bimetallic strengthening. Finally, the future development direction of the Mg/Al bimetal is prospected, which provides some new ideas for the development and application of the Mg/Al bimetal.
基金the National Natural Science Foundation of China (No. 50375019).
文摘The matrix accumulative roll bonding technology （MARB） can improve the matrix performance of metal composite and strengthen the bonding quality of the interface./n this research, for the fwst time, the technology of MARB was proposed. A sound Cu/AI bonding composite was obtained using the MARB process and the bonding characteristic of the interface was studied using scanning electricity microscope （SEM） and energy-dispersive spectroscopy （EDS）. The result indicated that accumulation cycles and diffusion annealing temperature were the most important factors for fabricating a Cu/AI composite material. The substrate aluminum was strengthened by MARB, and a high quality Cu/AI composite with sound interface was obtained as well.
基金Project supported by the Fundamental Materials Development funded by the Korean Ministry of Knowledge Economy
文摘Cu/Al bar clad material was fabricated by a drawing process and a subsequent heat treatment.During these processes,intermetallic compounds have been formed at the interface of Cu/Al and have affected its bonding property.Microstructures of Cu/Al interfaces were observed by OM,SEM and EDX Analyser in order to investigate the bonding properties of the material.According to the microstructure a series of diffusion layers were observed at the interface and the thicknesses of diffusion layers have increased with aging time as a result of the diffusion bonding.The interfaces were composed of 3-ply diffusion layers and their compositions were changed with aging time at 400 °C.These compositional compounds were revealed to be η2,(θ+η2),(α+θ) intermetallic phases.It is evident from V-notch impact tests that the growth of the brittle diffusion layers with the increasing aging time directly influenced delamination distance between the Cu sleeve and the Al core.It is suggested that the proper holding time at 400 °C for aging as post heat treatment of a drawn Cu/Al bar clad material would be within 1 h.
基金Funded by the Natural Science Foundation of Anhui Province(No.050440704)
文摘The interface reaction between the SiC particles （ SiCp ） and Fe was stndicd during sintering the SiCp reinforced Fe matrix composites at 1423 K for 1 h. In the composite having 3wt% （weight ratio） SiCp （the 3SiCp/ Fe composite）, the interface reaction products of Fe3 Si, the carbon precipitates, and Fe3 C or pearlite were generated. Fe3 Si coustructs the bright matrix of the reaction zone in the original situation of the SiCp. The carbon precipitates are randondy embedded in the reaction zone. Fe3 C or pearlite exists at the grain boundaries of the Fe matrix. As increasing the SiCp concentration in the SiCp/ Fe composite, the inteusity of the interface reaction between SiCp and Fe iacreases. After the 10SiCp/ Fe composite （ having 10wt .% SiCp ） sintered at 1423 K for 1 h, all of SiCp are decomposed, and replaced by the reaction zone composed of Fe3 Si and the carbon precipitates. No Fe3 C or pearlite was genertaed during the reaction. The effects of the techniques of oxidizing of SiCp , coating SiCp by interaction with the Cr powder, and alloying the Fe matrix by adding the Cr element on the interface stability of the SiCp/ Fe composite system were also investigated, respectitely. The oxide membrane and the coating layer on SiCp can inhibit the interface reaction between SiCp and Fe by isolating SiCp from the Fe matrix during sintering. The interface reaction does not occur in the 3 SiCp/ Fe- 10 Cr composite but in the 3 SiCp/ Fe-5 Cr composite. In the SiCp/ Fe-Cr alloy composites, the interface reaction between SiCp and the Fe- Cr alloys is weaker than that between SiCp and Fe . The Cr element behaves as a diluent, it causes a redaction in the interface reaction, which is proportional to the amount of the element added.
