An optically controlled SiC lateral power transistor based on SiC/SiCGe superjunction structure

An optically controlled SiC/SiCGe lateral power transistor based on superjunction structure has been proposed, in which n-SiCGe/p-SiC superjunction structure is employed to improve device figure of merit. Performance of the novel optically controlled power transistor was simulated using Silvaco Atlas tools, which has shown that the device has a very good response to the visible light and the near infrared light. The optoelectronic responsivities of the device at 0.5 μm and 0.7 μm are 330 mA/W and 76.2 mA/W at 2 V based voltage, respectively.

具有电荷补偿层的SiCGe/SiC光控晶体管的特性模拟

本文提出了一种具有电荷补偿层的SiCGe/SiC的光控晶体管,主要利用SiCGe与SiC构成异质结来克服SiC材料对大部分可见光和全部红外光的不敏感性。结构上,在传统的npn晶体管底部加了一层P型电荷补偿层,在横向和纵向电场的相互作用下,来改善器件的性能。