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纳米复合n型Bi_2(Te_(0.9)Se_(0.1))_3/(SiC)_y热电材料的微观组织结构与热电性能 被引量:1
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作者 田杰 张忻 +3 位作者 周子群 刘洪亮 伏亚楠 张久兴 《功能材料》 EI CAS CSCD 北大核心 2018年第6期184-189,共6页
以铋粉、碲粉、硒粉以及纳米SiC粉末为原料,采用机械合金化结合放电等离子烧结技术成功制备了n型Bi_2(Te_(0.9)Se_(0.1))_3/(SiC)_y(0≤y≤0.02)纳米复合热电材料,并详细研究了纳米SiC复合量对样品物相组成、微观组织结构以及热电性能... 以铋粉、碲粉、硒粉以及纳米SiC粉末为原料,采用机械合金化结合放电等离子烧结技术成功制备了n型Bi_2(Te_(0.9)Se_(0.1))_3/(SiC)_y(0≤y≤0.02)纳米复合热电材料,并详细研究了纳米SiC复合量对样品物相组成、微观组织结构以及热电性能的影响。实验结果表明,纳米尺度的SiC颗粒弥散分布在微米尺度的Bi_2(Te_(0.9)Se_(0.1))_3基体中的晶界处,这种纳米复合结构能够显著降低晶格热导率,对热电性能的提高非常有利。Bi_2(Te_(0.9)Se_(0.1))_3/(SiC)_y复合热电材料的电输运特性为n型传导,电阻率和Seebeck系数均随SiC含量的增多而增大,在室温附近仍保持有良好的电输运特性。纳米SiC颗粒弥散分布在晶界位置,可以增加声子散射,显著降低热导率,使得复合有SiC的样品的ZT值相较未掺杂的样品有所提高,在SiC复合量摩尔比y=0.01,T=323K时,Bi_2(Te_(0.9)Se_(0.1))_3/(SiC)_(0.01)成分样品具有最大ZT值,达到0.73。 展开更多
关键词 BI2TE3 sic纳米复合化 热导率 晶格热导率 ZT
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Characterization of SiC nanowires prepared on C/C composite without catalyst by CVD 被引量:3
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作者 葛毅成 刘云启 +3 位作者 武帅 吴皇 毛佩林 易茂中 《Transactions of Nonferrous Metals Society of China》 SCIE EI CAS CSCD 2015年第10期3258-3264,共7页
SiC nanowires were prepared on C/C composite surface without catalyst by chemical vapor deposition(CVD) using CH3 SiCl3 as precursor.SEM images of the CVD-product reveal that some long nanowires have grown to tens o... SiC nanowires were prepared on C/C composite surface without catalyst by chemical vapor deposition(CVD) using CH3 SiCl3 as precursor.SEM images of the CVD-product reveal that some long nanowires have grown to tens of micrometers with some gathered as a ball.Some short nanowires agglomerate like chestnut shell with many thorns accompanied by some deposited nano-particles.XRD,Raman-spectrum and FTIR patterns indicate that the product is a typical β-SiC.TEM images show that the nanowires have a wide diameter range from 10 to 100 nm,and some thin nanowires are bonded to the thick one by amorphous CVD-SiC.A SiC branch generates from an amorphous section of a thick one with an angle of 70° between them,which is consistent with the [111] axis stacking angle of the crystal.SAED and fast Fourier transform(FFT) patterns reveal that the nanowires can grow along with different axes,and the bamboo-nodes section is full of stacking faults and twin crystal.The twisted SiC lattice planes reveal that the screw dislocation growth is the main mechanism for the CVD-SiC nanowires. 展开更多
关键词 sic nanowires C/C composite chemical vapor deposition growth mechanism CHARACTERIZATION
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PIEZOSPECTROSCOPIC STUDY OF RESIDUAL STRESSES AROUND INDENTATIONS IN SiC/Al_O_3 NANOCOMPOSITE
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作者 陶杰 崔益华 杨斌鹏 《Transactions of Nanjing University of Aeronautics and Astronautics》 EI 2003年第1期85-90,共6页
A new experimental measurement of residual stresses around Vickers′ indentations on the surface of the SiC/Al 2O 3 nanocomposites is proposed with the aid of a Raman microprobe. Results s how that the shifts of R... A new experimental measurement of residual stresses around Vickers′ indentations on the surface of the SiC/Al 2O 3 nanocomposites is proposed with the aid of a Raman microprobe. Results s how that the shifts of R lines in the fluorescence spectra va ry with the distance from the centre of indentation. The magnitude of load appli ed on the surface of the materials through the indenter influences the shifts of R lines to great extent. The luminescence of R lines of the materials before indenting is used to determine the residual stresses around the indentation in the materials, assuming that the stress tensor is transversely isotropic. Final ly, the term of hydrostatic stress is adopted to explain and compare different residual stresses around indentations with the increase of the indenting load an d the distance from the centre of indentations. < 展开更多
关键词 residual stress NANOCOMPOSITE piezospec troscopi c method INDENTATION sic/Al 2O 3
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Microstructure and properties of alumina-silicon carbide nanocomposites fabricated by pressureless sintering and post hot-isostatic pressing 被引量:4
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作者 Young-Keun JEONG Koichi NIIHARA 《Transactions of Nonferrous Metals Society of China》 SCIE EI CAS CSCD 2011年第A01期1-6,共6页
A1203/5%SIC nanocomposites were fabricated by pressureless sintering using MgO as a sintering aid and then post hot-isostatic pressed (HIP), which can subsequently break through the disadvantage of hot-pressing proc... A1203/5%SIC nanocomposites were fabricated by pressureless sintering using MgO as a sintering aid and then post hot-isostatic pressed (HIP), which can subsequently break through the disadvantage of hot-pressing process. The MgO additive was able to promote the densification of the composites, but could not induce the grain growth of A1203 matrix due to the grain growth inhibition by nano-sized SiC particles. After HIP treatment, A12OJSiC nanocomposites achieved full densification and homogeneous distribution of nano-sized SiC particles. Moreover, the fracture morphology of HIP treated specimens was identical with that of the hot-pressed A1203/SiC nanocomposites showing complete transgranular fracture. Consequently, high fracture strength of 1 GPa was achieved for the A1203/5%SIC nanocomposites by pressureless sintering and post HIP process. 展开更多
关键词 NANOCOMPOSITE pressureless sintering fracture strength
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