SiCN thin films were synthesized by a radio frequency chemical vapor deposition (RFCVD) system on P\|type Si (1 0 0) wafers using C 2 H 4 , SiH 4 and N 2 as raw materials. In order to get rid of the ...SiCN thin films were synthesized by a radio frequency chemical vapor deposition (RFCVD) system on P\|type Si (1 0 0) wafers using C 2 H 4 , SiH 4 and N 2 as raw materials. In order to get rid of the oxygen absorbed on the surface and improve the characteristics of electron field emission, Ar + ions of low energy were used to bombard the samples. The field emission characteristics of SiCN thin films before and after Ar + bombardment were studied in the super vacuum environment of 10 -6 Pa. It was showed that the turn\|on field (defined as the point where the current\|voltage curve shows a sharp increase in the current density) decreased from 38 V/μm before bombardment to 25 V/μm after bombardment. And the maximum emission current density increased from 159.2 to 267.4 μA/cm 2 . The composition before and after Ar + bombardment was compared using X\|ray photoelectron spectroscopy (XPS). Our results illustrated that the field emission characteristics were improved after the bombardment of Ar + .展开更多
Radio Frequency plasma enhanced Chemical Vapor Deposition (RF CVD) using N2, SiH4 and C2H4 as the reaction sources was used to prepare amorphous ternary Si x C y N z thin films. The chemical states of the C, Si and N...Radio Frequency plasma enhanced Chemical Vapor Deposition (RF CVD) using N2, SiH4 and C2H4 as the reaction sources was used to prepare amorphous ternary Si x C y N z thin films. The chemical states of the C, Si and N atoms in the films were characterized by X-ray photoelectron spectroscopy (XPS) and Fourier Transform Infrared Spectroscopy (FTIR). The refractive indexn, extinction coefficientk and optical band gapE opt of the thin films were investigated by UV-visible spectrophotometer and spectroscopic ellipsometer. The results show that a complex chemical bonding network rather than a simple mixture of Si3N4, SiC, CN x and a-C etc., may exist in the ternary thin films. Then's of the films are within the range of 1. 90–2. 45, andE opt's of all samples are within the range of 2. 71–2. 86 eV.展开更多
SiCN thin films and Cu/SiCN/Si structures were fabricated by magnetron sputtering. And some samples underwent the rapid thermal annealing(RTA) processing. The thin-film surface morphology, crystal structure and electr...SiCN thin films and Cu/SiCN/Si structures were fabricated by magnetron sputtering. And some samples underwent the rapid thermal annealing(RTA) processing. The thin-film surface morphology, crystal structure and electronic properties were characterized by atomic force microscopy(AFM), X-ray diffractometry(XRD), Fourier transform infrared transmission(FTIR) and four-point probe(FPP) analyses. The results reveal the formation of complex networks among the three elements, Si, C and N, and the existence of different chemical bonds in the SiCN films, such as Si—C, Si—N, C—N and C=N. The as-deposited SiCN thin films are amorphous in the Cu/SiCN/Si structures and have good thermal stability, and the SiCN thin films are still able to prevent the diffusion reaction between Cu and Si interface after RTA processing at 600 ℃ for 5 min.展开更多
文摘SiCN thin films were synthesized by a radio frequency chemical vapor deposition (RFCVD) system on P\|type Si (1 0 0) wafers using C 2 H 4 , SiH 4 and N 2 as raw materials. In order to get rid of the oxygen absorbed on the surface and improve the characteristics of electron field emission, Ar + ions of low energy were used to bombard the samples. The field emission characteristics of SiCN thin films before and after Ar + bombardment were studied in the super vacuum environment of 10 -6 Pa. It was showed that the turn\|on field (defined as the point where the current\|voltage curve shows a sharp increase in the current density) decreased from 38 V/μm before bombardment to 25 V/μm after bombardment. And the maximum emission current density increased from 159.2 to 267.4 μA/cm 2 . The composition before and after Ar + bombardment was compared using X\|ray photoelectron spectroscopy (XPS). Our results illustrated that the field emission characteristics were improved after the bombardment of Ar + .
基金the National Natural Science Foundation of China (19975 0 3 5 )
文摘Radio Frequency plasma enhanced Chemical Vapor Deposition (RF CVD) using N2, SiH4 and C2H4 as the reaction sources was used to prepare amorphous ternary Si x C y N z thin films. The chemical states of the C, Si and N atoms in the films were characterized by X-ray photoelectron spectroscopy (XPS) and Fourier Transform Infrared Spectroscopy (FTIR). The refractive indexn, extinction coefficientk and optical band gapE opt of the thin films were investigated by UV-visible spectrophotometer and spectroscopic ellipsometer. The results show that a complex chemical bonding network rather than a simple mixture of Si3N4, SiC, CN x and a-C etc., may exist in the ternary thin films. Then's of the films are within the range of 1. 90–2. 45, andE opt's of all samples are within the range of 2. 71–2. 86 eV.
基金Project(60371046) supported by the National Natural Science Foundation of ChinaProject(713-394201034) supported by the International Cooperant Foundation of Hunan Province, China
文摘SiCN thin films and Cu/SiCN/Si structures were fabricated by magnetron sputtering. And some samples underwent the rapid thermal annealing(RTA) processing. The thin-film surface morphology, crystal structure and electronic properties were characterized by atomic force microscopy(AFM), X-ray diffractometry(XRD), Fourier transform infrared transmission(FTIR) and four-point probe(FPP) analyses. The results reveal the formation of complex networks among the three elements, Si, C and N, and the existence of different chemical bonds in the SiCN films, such as Si—C, Si—N, C—N and C=N. The as-deposited SiCN thin films are amorphous in the Cu/SiCN/Si structures and have good thermal stability, and the SiCN thin films are still able to prevent the diffusion reaction between Cu and Si interface after RTA processing at 600 ℃ for 5 min.
