SiCN thin films were synthesized by a radio frequency chemical vapor deposition (RFCVD) system on P\|type Si (1 0 0) wafers using C 2 H 4 , SiH 4 and N 2 as raw materials. In order to get rid of the ...SiCN thin films were synthesized by a radio frequency chemical vapor deposition (RFCVD) system on P\|type Si (1 0 0) wafers using C 2 H 4 , SiH 4 and N 2 as raw materials. In order to get rid of the oxygen absorbed on the surface and improve the characteristics of electron field emission, Ar + ions of low energy were used to bombard the samples. The field emission characteristics of SiCN thin films before and after Ar + bombardment were studied in the super vacuum environment of 10 -6 Pa. It was showed that the turn\|on field (defined as the point where the current\|voltage curve shows a sharp increase in the current density) decreased from 38 V/μm before bombardment to 25 V/μm after bombardment. And the maximum emission current density increased from 159.2 to 267.4 μA/cm 2 . The composition before and after Ar + bombardment was compared using X\|ray photoelectron spectroscopy (XPS). Our results illustrated that the field emission characteristics were improved after the bombardment of Ar + .展开更多
Radio Frequency plasma enhanced Chemical Vapor Deposition (RF CVD) using N2, SiH4 and C2H4 as the reaction sources was used to prepare amorphous ternary Si x C y N z thin films. The chemical states of the C, Si and N...Radio Frequency plasma enhanced Chemical Vapor Deposition (RF CVD) using N2, SiH4 and C2H4 as the reaction sources was used to prepare amorphous ternary Si x C y N z thin films. The chemical states of the C, Si and N atoms in the films were characterized by X-ray photoelectron spectroscopy (XPS) and Fourier Transform Infrared Spectroscopy (FTIR). The refractive indexn, extinction coefficientk and optical band gapE opt of the thin films were investigated by UV-visible spectrophotometer and spectroscopic ellipsometer. The results show that a complex chemical bonding network rather than a simple mixture of Si3N4, SiC, CN x and a-C etc., may exist in the ternary thin films. Then's of the films are within the range of 1. 90–2. 45, andE opt's of all samples are within the range of 2. 71–2. 86 eV.展开更多
文摘SiCN thin films were synthesized by a radio frequency chemical vapor deposition (RFCVD) system on P\|type Si (1 0 0) wafers using C 2 H 4 , SiH 4 and N 2 as raw materials. In order to get rid of the oxygen absorbed on the surface and improve the characteristics of electron field emission, Ar + ions of low energy were used to bombard the samples. The field emission characteristics of SiCN thin films before and after Ar + bombardment were studied in the super vacuum environment of 10 -6 Pa. It was showed that the turn\|on field (defined as the point where the current\|voltage curve shows a sharp increase in the current density) decreased from 38 V/μm before bombardment to 25 V/μm after bombardment. And the maximum emission current density increased from 159.2 to 267.4 μA/cm 2 . The composition before and after Ar + bombardment was compared using X\|ray photoelectron spectroscopy (XPS). Our results illustrated that the field emission characteristics were improved after the bombardment of Ar + .
基金the National Natural Science Foundation of China (19975 0 3 5 )
文摘Radio Frequency plasma enhanced Chemical Vapor Deposition (RF CVD) using N2, SiH4 and C2H4 as the reaction sources was used to prepare amorphous ternary Si x C y N z thin films. The chemical states of the C, Si and N atoms in the films were characterized by X-ray photoelectron spectroscopy (XPS) and Fourier Transform Infrared Spectroscopy (FTIR). The refractive indexn, extinction coefficientk and optical band gapE opt of the thin films were investigated by UV-visible spectrophotometer and spectroscopic ellipsometer. The results show that a complex chemical bonding network rather than a simple mixture of Si3N4, SiC, CN x and a-C etc., may exist in the ternary thin films. Then's of the films are within the range of 1. 90–2. 45, andE opt's of all samples are within the range of 2. 71–2. 86 eV.
