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B-implantation and Annealing for SiGe Epilayers
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作者 JIANG R L,LIU W P,JIANG N, ZHU S M,HU L H,ZHENG Y D (Dept.of Physics,Nanjing University,Nanjing 210093,CHN) 《Semiconductor Photonics and Technology》 CAS 1997年第4期286-289,共4页
Si 0.8 Ge 0.2 strained epilayer were grown on Si substrates by rapid thermal process/very low pressure-chemical vapor deposition (RTP/VLP-CVD) and implanted with boron at 40 keV,a dosage of 2.5×10 14 ... Si 0.8 Ge 0.2 strained epilayer were grown on Si substrates by rapid thermal process/very low pressure-chemical vapor deposition (RTP/VLP-CVD) and implanted with boron at 40 keV,a dosage of 2.5×10 14 cm -2 .Rapid thermal annealing (RTA) and steady-state furnace annealing with different temperature and time period were performed for comparison.Results indicate that RTA is better than furnace annealing.After RTA at 750 ℃~850 ℃ for 10 s or at 700 ℃ for 40 s,the implantation induced damage can be removed,the carrier mobility was about 300 cm 2/V·s and the activity was nearly 100%. 展开更多
关键词 Activity ANNEALING B-implantation Doping Technique sige/Si heterostructures
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