An open-loop 20 GSps track-and-hold amplifier （THA） using fully-differential architecture to mitigate common-mode noise and suppress even-order harmonics is presented. CMOS switch and dummy switches are adopted to a...An open-loop 20 GSps track-and-hold amplifier （THA） using fully-differential architecture to mitigate common-mode noise and suppress even-order harmonics is presented. CMOS switch and dummy switches are adopted to achieve high speed and good linearity. A cross-coupled pair is used in the input buffer to suppress the charge injection and clock feedthrough. Both the input and output buffers use an active inductor load to achieve high signal bandwidth. The THA is realized with 0.18/zm SiGe BiCMOS technology using only CMOS devices at a 1.8 V voltage supply and with a core area of 0.024 mme. The measurement results show that the SFDR is 32.4 dB with a 4 GHz sine wave input at a 20 GSps sampling rate, and the third harmonic distortion is -48 dBc. The effective resolution bandwidth of the THA is 12 GHz and the figure of merit is only 0.028 mW/GHz.展开更多
This paper presents a 2.4 GHz power amplifier （PA） designed and implemented in 0.35μm SiGe BiCMOS technology. Instead of chip grounding through PCB vias, a metal plate with a mesa connecting ground is designed to d...This paper presents a 2.4 GHz power amplifier （PA） designed and implemented in 0.35μm SiGe BiCMOS technology. Instead of chip grounding through PCB vias, a metal plate with a mesa connecting ground is designed to decrease the parasitics in the PCB, improving the stability and the gain of the circuit. In addition, a low-pass network for output matching is designed to improve the linearity and power capability. At 2.4 GHz, a P1dB of 15.7 dBm has been measured, and the small signal gain is 27.6 dB with S11 〈 -7 dB and S22 〈 -15 dB.展开更多
This paper presents the circuit design and measured performance of a multi-band tuner for mobile TV applications. The tuner RFIC is composed of a wideband front-end, an analog baseband, a full integrated fractional- N...This paper presents the circuit design and measured performance of a multi-band tuner for mobile TV applications. The tuner RFIC is composed of a wideband front-end, an analog baseband, a full integrated fractional- N synthesizer and an Iac digital interface. To meet the stringent adjacent channel rejection （ACR） requirements of mobile TV standards while keeping low power consumption and low cost, direct conversion architecture with a local AGC scheme is adopted in this design. Eighth-order elliptic active-RC filters with large stop band attenuation and a sharp transition band are chosen as the channel select filter to further improve the ACR preference. The chip is fabricated in a 0.35-#m SiGe BiCMOS technology and occupies a silicon area of 5.5 mm2. It draws 50 mA current from a 3.0 V power supply. In CMMB application, it achieves a sensitivity of-97 dBm with 1/2 coding QPSK signal input and over 40 dB ACR.展开更多
A 23 GHz voltage controlled oscillator （VCO） with very low power consumption is presented. This paper presents the design and measurement of an integrated millimeter wave VCO. This VCO employs an on-chip inductor an...A 23 GHz voltage controlled oscillator （VCO） with very low power consumption is presented. This paper presents the design and measurement of an integrated millimeter wave VCO. This VCO employs an on-chip inductor and MOS varactor to form a high Q resonator. The VCO RFIC was implemented in a 0.18 #m 120 GHz ft SiGe hetero-junction bipolar transistor （HBT） BiCMOS technology. The VCO oscillation frequency is around 23 GHz, targeting at the ultra wideband （UWB） and short range radar applications. The core of the VCO circuit consumes 1 mA current from a 2.5 V power supply and the VCO phase noise was measured at around -94 dBc/Hz at a 1 MHz frequency offset. The FOM of the VCO is -177 dBc/Hz.展开更多
In this paper, we present the design of an integrated low noise amplifier （LNA） for wireless local area network （WLAN） applications in the 5.15-5.825 GHz range using a SiGe BiCMOS technology. A novel method that c...In this paper, we present the design of an integrated low noise amplifier （LNA） for wireless local area network （WLAN） applications in the 5.15-5.825 GHz range using a SiGe BiCMOS technology. A novel method that can determine both the optimum bias point and the frequency point for achieving the minimum noise figure is put forward. The method can be used to determine the optimum impedance over a relevant wider operating frequency range. The results show that this kind of optimizing method is more suitable for the WLAN circuits design. The LNA gain is optimized and the noise figure （NF） is reduced. This method can also achieve the noise match and power match simultaneously. This proposal is applied on designing a LNA for IEEE 802.1 la WLAN. The LNA exhibits a power gain large than 16 dB from 5.15 to 5.825 GHz range. The noise figure is lower than 2 dB. The OIP3 is -8 dBm. Also the LNA is matched to 50 Ω input impedance with 6 mA DC current for differential design.展开更多
A 2 nd transconductance subharmonic receiver for 245 GHz spectroscopy sensor applications has been proposed. The receiver consists of a 245 GHz on-chip folded dipole antenna, a CB（common base） LNA, a 2 nd transcondu...A 2 nd transconductance subharmonic receiver for 245 GHz spectroscopy sensor applications has been proposed. The receiver consists of a 245 GHz on-chip folded dipole antenna, a CB（common base） LNA, a 2 nd transconductance SHM（subharmonic mixer）, and a 120 GHz push-push VCO with 1/64 divider. The receiver is fabricated in f;/f;= 300/500 GHz SiGe:C BiCMOS technology. The receiver dissipates a low power of 288 mW.Integrated with the on-chip antenna, the receiver is measured on-chip with a conversion gain of 15 dB, a bandwidth of 15 GHz, and the chip will be utilized in PCB board design for gas spectroscopy sensor application.展开更多
A continuous-time 7th-order Butterworth Gm-C low pass filter （LPF） with on-chip automatic tuning circuit has been implemented for a direct conversion DBS tuner in 0.35 μm SiGe BiCMOS technology. The filter＇s -3 dB...A continuous-time 7th-order Butterworth Gm-C low pass filter （LPF） with on-chip automatic tuning circuit has been implemented for a direct conversion DBS tuner in 0.35 μm SiGe BiCMOS technology. The filter＇s -3 dB cutoff frequency f0 can be tuned from 4 to 40 MHz. A novel on-chip automatic tuning scheme has been successfully realized to tune and Iock the filter＇s cutoff frequency. Measurement results show that the filter has -0.5 dB passband gain, ＋/- 5% bandwidth accuracy, 30 nV/Hz1/2 input referred noise, -3 dBVrms passband IIP3, and 27 dBVrms stopband IIP3. The I/Q LPFs with the tuning circuit draw 13 mA （with f0 = 20 MHz） from 5 V supply, and occupy 0.5 mm^2.展开更多
基金supported by the PhD Programs Foundation of Ministry of Education of China(No.2009009211001)the Important National Science&Technology Specific Projects(No.2010ZX03006-003-02)
文摘An open-loop 20 GSps track-and-hold amplifier （THA） using fully-differential architecture to mitigate common-mode noise and suppress even-order harmonics is presented. CMOS switch and dummy switches are adopted to achieve high speed and good linearity. A cross-coupled pair is used in the input buffer to suppress the charge injection and clock feedthrough. Both the input and output buffers use an active inductor load to achieve high signal bandwidth. The THA is realized with 0.18/zm SiGe BiCMOS technology using only CMOS devices at a 1.8 V voltage supply and with a core area of 0.024 mme. The measurement results show that the SFDR is 32.4 dB with a 4 GHz sine wave input at a 20 GSps sampling rate, and the third harmonic distortion is -48 dBc. The effective resolution bandwidth of the THA is 12 GHz and the figure of merit is only 0.028 mW/GHz.
文摘This paper presents a 2.4 GHz power amplifier （PA） designed and implemented in 0.35μm SiGe BiCMOS technology. Instead of chip grounding through PCB vias, a metal plate with a mesa connecting ground is designed to decrease the parasitics in the PCB, improving the stability and the gain of the circuit. In addition, a low-pass network for output matching is designed to improve the linearity and power capability. At 2.4 GHz, a P1dB of 15.7 dBm has been measured, and the small signal gain is 27.6 dB with S11 〈 -7 dB and S22 〈 -15 dB.
文摘This paper presents the circuit design and measured performance of a multi-band tuner for mobile TV applications. The tuner RFIC is composed of a wideband front-end, an analog baseband, a full integrated fractional- N synthesizer and an Iac digital interface. To meet the stringent adjacent channel rejection （ACR） requirements of mobile TV standards while keeping low power consumption and low cost, direct conversion architecture with a local AGC scheme is adopted in this design. Eighth-order elliptic active-RC filters with large stop band attenuation and a sharp transition band are chosen as the channel select filter to further improve the ACR preference. The chip is fabricated in a 0.35-#m SiGe BiCMOS technology and occupies a silicon area of 5.5 mm2. It draws 50 mA current from a 3.0 V power supply. In CMMB application, it achieves a sensitivity of-97 dBm with 1/2 coding QPSK signal input and over 40 dB ACR.
基金Project supported by the State Key Development Program for Basic Research of China(No.2010CB327502)
文摘A 23 GHz voltage controlled oscillator （VCO） with very low power consumption is presented. This paper presents the design and measurement of an integrated millimeter wave VCO. This VCO employs an on-chip inductor and MOS varactor to form a high Q resonator. The VCO RFIC was implemented in a 0.18 #m 120 GHz ft SiGe hetero-junction bipolar transistor （HBT） BiCMOS technology. The VCO oscillation frequency is around 23 GHz, targeting at the ultra wideband （UWB） and short range radar applications. The core of the VCO circuit consumes 1 mA current from a 2.5 V power supply and the VCO phase noise was measured at around -94 dBc/Hz at a 1 MHz frequency offset. The FOM of the VCO is -177 dBc/Hz.
文摘In this paper, we present the design of an integrated low noise amplifier （LNA） for wireless local area network （WLAN） applications in the 5.15-5.825 GHz range using a SiGe BiCMOS technology. A novel method that can determine both the optimum bias point and the frequency point for achieving the minimum noise figure is put forward. The method can be used to determine the optimum impedance over a relevant wider operating frequency range. The results show that this kind of optimizing method is more suitable for the WLAN circuits design. The LNA gain is optimized and the noise figure （NF） is reduced. This method can also achieve the noise match and power match simultaneously. This proposal is applied on designing a LNA for IEEE 802.1 la WLAN. The LNA exhibits a power gain large than 16 dB from 5.15 to 5.825 GHz range. The noise figure is lower than 2 dB. The OIP3 is -8 dBm. Also the LNA is matched to 50 Ω input impedance with 6 mA DC current for differential design.
基金Project supported by the Zhejiang National Natural Science Foundation of China(No.LQ17F040001)the Key Laboratory Open Project Fund of Southeast University,China(No.K201817)
文摘A 2 nd transconductance subharmonic receiver for 245 GHz spectroscopy sensor applications has been proposed. The receiver consists of a 245 GHz on-chip folded dipole antenna, a CB（common base） LNA, a 2 nd transconductance SHM（subharmonic mixer）, and a 120 GHz push-push VCO with 1/64 divider. The receiver is fabricated in f;/f;= 300/500 GHz SiGe:C BiCMOS technology. The receiver dissipates a low power of 288 mW.Integrated with the on-chip antenna, the receiver is measured on-chip with a conversion gain of 15 dB, a bandwidth of 15 GHz, and the chip will be utilized in PCB board design for gas spectroscopy sensor application.
文摘A continuous-time 7th-order Butterworth Gm-C low pass filter （LPF） with on-chip automatic tuning circuit has been implemented for a direct conversion DBS tuner in 0.35 μm SiGe BiCMOS technology. The filter＇s -3 dB cutoff frequency f0 can be tuned from 4 to 40 MHz. A novel on-chip automatic tuning scheme has been successfully realized to tune and Iock the filter＇s cutoff frequency. Measurement results show that the filter has -0.5 dB passband gain, ＋/- 5% bandwidth accuracy, 30 nV/Hz1/2 input referred noise, -3 dBVrms passband IIP3, and 27 dBVrms stopband IIP3. The I/Q LPFs with the tuning circuit draw 13 mA （with f0 = 20 MHz） from 5 V supply, and occupy 0.5 mm^2.
