With modified necessary steps for SiGe implementation,multi-finger power SiGe H BT devices are fabricated in a CMOS process line with 125mm wafer.The devices s how quite high BV CBO 23V.The current gain is very sta...With modified necessary steps for SiGe implementation,multi-finger power SiGe H BT devices are fabricated in a CMOS process line with 125mm wafer.The devices s how quite high BV CBO 23V.The current gain is very stable over a wide I C.The f T is up to 7GHz at a DC bias of I C=40mA and V CE=8 V,which show high current handling capability.Under continuous conditions in B o peration,the 31dBm output power,10dB G p,and 33.3% of PAE are obtained at 3GHz .Based on extensive tests,it has been demonstrated that the yield on a wafer is up to 85%,which means that the research results are capable of commercialization .展开更多
The influence of a heterojunction in the vicinity of a graded BC junction on the performance of npn SiGe HBTs is studied. SiGe HBTs differing only in heterojunction position in the vicinity of a graded BC junction are...The influence of a heterojunction in the vicinity of a graded BC junction on the performance of npn SiGe HBTs is studied. SiGe HBTs differing only in heterojunction position in the vicinity of a graded BC junction are simulated by means of 2D Medici software for DC current gain and frequency characteristics. In addition, the simulated DC current gains and cut-off frequencies are compared at different collector-emitter bias voltages. Through the simulation results, both DC and HF device performance are found to be strongly impacted by degree of confinement of the neutral base in the SiGe layer, even in the absence of a conduction band barrier. This conclusion is of significance for designing and analyzing SiGe HBTs.展开更多
文摘With modified necessary steps for SiGe implementation,multi-finger power SiGe H BT devices are fabricated in a CMOS process line with 125mm wafer.The devices s how quite high BV CBO 23V.The current gain is very stable over a wide I C.The f T is up to 7GHz at a DC bias of I C=40mA and V CE=8 V,which show high current handling capability.Under continuous conditions in B o peration,the 31dBm output power,10dB G p,and 33.3% of PAE are obtained at 3GHz .Based on extensive tests,it has been demonstrated that the yield on a wafer is up to 85%,which means that the research results are capable of commercialization .
文摘The influence of a heterojunction in the vicinity of a graded BC junction on the performance of npn SiGe HBTs is studied. SiGe HBTs differing only in heterojunction position in the vicinity of a graded BC junction are simulated by means of 2D Medici software for DC current gain and frequency characteristics. In addition, the simulated DC current gains and cut-off frequencies are compared at different collector-emitter bias voltages. Through the simulation results, both DC and HF device performance are found to be strongly impacted by degree of confinement of the neutral base in the SiGe layer, even in the absence of a conduction band barrier. This conclusion is of significance for designing and analyzing SiGe HBTs.
