采用0.13μm Si Ge双极互补型金属氧化物半导体（Bi CMOS）工艺,设计了一款X波段功率放大器芯片。通过采用共射共基放大器电路结构和有源线性化偏置电路,提高了电路耐压值和功放最大输出功率。通过两级共射共基放大电路级联,结合级间匹...采用0.13μm Si Ge双极互补型金属氧化物半导体（Bi CMOS）工艺,设计了一款X波段功率放大器芯片。通过采用共射共基放大器电路结构和有源线性化偏置电路,提高了电路耐压值和功放最大输出功率。通过两级共射共基放大电路级联,结合级间匹配电路及输出匹配电路,提高了放大器的增益和工作带宽。采用非均匀功率管版图布局及镇流电阻,提升功率放大器电路可靠性。测试结果表明,在8-12 GHz频段内,放大器回波损耗均小于-10 d B,小信号增益大于30 d B,1 d B压缩点输出功率为16 d Bm,饱和功率大于19 d Bm,峰值饱和功率附加效率大于18%。该放大器工作在AB类,采用5 V供电,静态工作电流为80 m A,面积为1.22 mm×0.73 mm。展开更多
A two-stage power amplifier operated at 925 MHz was designed and fabricated in Jazz' s 0.35μmSiGe BiCMOS process.It was fully integrated excluding the inductors and the output matching network.Under a single 3.3V...A two-stage power amplifier operated at 925 MHz was designed and fabricated in Jazz' s 0.35μmSiGe BiCMOS process.It was fully integrated excluding the inductors and the output matching network.Under a single 3.3V supply voltage,the off-chip bonding test results indicated that the circuit has a smallsignal gain of more than 24dB,the input and output reflectance are less than- 24dB and-10dB,re-spectively,and the maximal output power is 23.5 dBm.At output power of 23.1 dBm,the PAE(poweradded efficiency)is 30.2%,the IMD2 and IMD3 are less than- 32 dBc and-46 dBc,respectively.The chip size is 1.27mm ×0.9mm.展开更多
东芝美国电子元器件公司（Toshiba America Electronic Components，TAEC）日前发布一款中等功率SiGe BiCMOS功率放大器TA4401CT，该产品适合于1．9GHz至2．5GHz频带的无线应用，包括无线LAN（WLAN）、PHS以及蓝牙等。TA4401CT采用了3...东芝美国电子元器件公司（Toshiba America Electronic Components，TAEC）日前发布一款中等功率SiGe BiCMOS功率放大器TA4401CT，该产品适合于1．9GHz至2．5GHz频带的无线应用，包括无线LAN（WLAN）、PHS以及蓝牙等。TA4401CT采用了3个串联RF级以实现线性，高效和低功耗的性能优化，该器件符合IEEE802．11g标准，展开更多
文摘采用0.13μm Si Ge双极互补型金属氧化物半导体（Bi CMOS）工艺,设计了一款X波段功率放大器芯片。通过采用共射共基放大器电路结构和有源线性化偏置电路,提高了电路耐压值和功放最大输出功率。通过两级共射共基放大电路级联,结合级间匹配电路及输出匹配电路,提高了放大器的增益和工作带宽。采用非均匀功率管版图布局及镇流电阻,提升功率放大器电路可靠性。测试结果表明,在8-12 GHz频段内,放大器回波损耗均小于-10 d B,小信号增益大于30 d B,1 d B压缩点输出功率为16 d Bm,饱和功率大于19 d Bm,峰值饱和功率附加效率大于18%。该放大器工作在AB类,采用5 V供电,静态工作电流为80 m A,面积为1.22 mm×0.73 mm。
基金Supported by the High Technology Research and Development Programme of China (2006AA03Z418)
文摘A two-stage power amplifier operated at 925 MHz was designed and fabricated in Jazz' s 0.35μmSiGe BiCMOS process.It was fully integrated excluding the inductors and the output matching network.Under a single 3.3V supply voltage,the off-chip bonding test results indicated that the circuit has a smallsignal gain of more than 24dB,the input and output reflectance are less than- 24dB and-10dB,re-spectively,and the maximal output power is 23.5 dBm.At output power of 23.1 dBm,the PAE(poweradded efficiency)is 30.2%,the IMD2 and IMD3 are less than- 32 dBc and-46 dBc,respectively.The chip size is 1.27mm ×0.9mm.
文摘东芝美国电子元器件公司（Toshiba America Electronic Components，TAEC）日前发布一款中等功率SiGe BiCMOS功率放大器TA4401CT，该产品适合于1．9GHz至2．5GHz频带的无线应用，包括无线LAN（WLAN）、PHS以及蓝牙等。TA4401CT采用了3个串联RF级以实现线性，高效和低功耗的性能优化，该器件符合IEEE802．11g标准，
