A novel high-κ~ A1203/HfO2/AI203 nanolaminate charge trapping memory capacitor structure based on SiGe substrates with low interface densities is successfully fabricated and investigated. The memory capacitor exhibit...A novel high-κ~ A1203/HfO2/AI203 nanolaminate charge trapping memory capacitor structure based on SiGe substrates with low interface densities is successfully fabricated and investigated. The memory capacitor exhibits excellent program-erasable characteristics. A large memory window of ~4 V, a small leakage current density of ~2 ×10-6 Acre-2 at a gate voltage of 7V, a high charge trapping density of 1.42 × 1013 cm-2 at a working vo]tage of 4-10 V and good retention characteristics are observed. Furthermore, the programming （△ VFB = 2.8 V at 10 V for 10μs） and erasing speeds （△VFB =-1.7 V at -10 V for 10μs） of the fabricated capacitor based on SiGe substrates are significantly improved as compared with counterparts reported earlier. It is concluded that the high-κ Al2O3/HfO2/Al2O3 nanolaminate charge trapping capacitor structure based on SiGe substrates is a promising candidate for future nano-scaled nonvolatile flash memory applications.展开更多
基金Supported by the National Science and Technology Major Project of China under Grant No 2013ZX02303007the National Key Research and Development Program of China under Grant No 2016YFA0301701the Youth Innovation Promotion Association of the Chinese Academy of Sciences under Grant No 2016112
文摘A novel high-κ~ A1203/HfO2/AI203 nanolaminate charge trapping memory capacitor structure based on SiGe substrates with low interface densities is successfully fabricated and investigated. The memory capacitor exhibits excellent program-erasable characteristics. A large memory window of ~4 V, a small leakage current density of ~2 ×10-6 Acre-2 at a gate voltage of 7V, a high charge trapping density of 1.42 × 1013 cm-2 at a working vo]tage of 4-10 V and good retention characteristics are observed. Furthermore, the programming （△ VFB = 2.8 V at 10 V for 10μs） and erasing speeds （△VFB =-1.7 V at -10 V for 10μs） of the fabricated capacitor based on SiGe substrates are significantly improved as compared with counterparts reported earlier. It is concluded that the high-κ Al2O3/HfO2/Al2O3 nanolaminate charge trapping capacitor structure based on SiGe substrates is a promising candidate for future nano-scaled nonvolatile flash memory applications.
