The impacts of remote Coulomb scattering(RCS)on hole mobility in ultra-thin body silicon-on-insulator(UTB SOI)p-MOSFETs at cryogenic temperatures are investigated.The physical models including phonon scattering,surfac...The impacts of remote Coulomb scattering(RCS)on hole mobility in ultra-thin body silicon-on-insulator(UTB SOI)p-MOSFETs at cryogenic temperatures are investigated.The physical models including phonon scattering,surface roughness scattering,and remote Coulomb scatterings are considered,and the results are verified by the experimental results at different temperatures for both bulk(from 300 K to 30 K)and UTB SOI(300 K and 25 K)p-MOSFETs.The impacts of the interfacial trap charges at both front and bottom interfaces on the hole mobility are mainly evaluated for the UTB SOI p-MOSFETs at liquid helium temperature(4.2 K).The results reveal that as the temperature decreases,the RCS due to the interfacial trap charges plays an important role in the hole mobility.展开更多
sSi/Si_（0.5）Ge_（0.5）/sSOI quantum-well（QW） p-MOSFETs with Hf O_2/Ti N gate stack were fabricated and characterized. According to the low temperature experimental results, carrier mobility of the strained Si_（0....sSi/Si_（0.5）Ge_（0.5）/sSOI quantum-well（QW） p-MOSFETs with Hf O_2/Ti N gate stack were fabricated and characterized. According to the low temperature experimental results, carrier mobility of the strained Si_（0.5）Ge_（0.5）QW p-MOSFET was mainly governed by phonon scattering from 300 to 150 K and Coulomb scattering below150 K, respectively. Coulomb scattering was intensified by the accumulated inversion charges in the Si cap layer of this Si/Si Ge heterostructure, which led to a degradation of carrier mobility in the Si Ge channel, especially at low temperature.展开更多
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61674008,61421005,and 61804003)the National Key Research and Development Program of China(Grant No.2016YFA0202101)the China Postdoctoral Science Foundation(Grant Nos.2018M630034 and 2019T120017)。
文摘The impacts of remote Coulomb scattering(RCS)on hole mobility in ultra-thin body silicon-on-insulator(UTB SOI)p-MOSFETs at cryogenic temperatures are investigated.The physical models including phonon scattering,surface roughness scattering,and remote Coulomb scatterings are considered,and the results are verified by the experimental results at different temperatures for both bulk(from 300 K to 30 K)and UTB SOI(300 K and 25 K)p-MOSFETs.The impacts of the interfacial trap charges at both front and bottom interfaces on the hole mobility are mainly evaluated for the UTB SOI p-MOSFETs at liquid helium temperature(4.2 K).The results reveal that as the temperature decreases,the RCS due to the interfacial trap charges plays an important role in the hole mobility.
基金Project supported by the National Natural Science Foundation of China(Nos.61306126,61306127,61106015)the CAS International Collaboration and Innovation Program on High Mobility Materials Engineering
文摘sSi/Si_（0.5）Ge_（0.5）/sSOI quantum-well（QW） p-MOSFETs with Hf O_2/Ti N gate stack were fabricated and characterized. According to the low temperature experimental results, carrier mobility of the strained Si_（0.5）Ge_（0.5）QW p-MOSFET was mainly governed by phonon scattering from 300 to 150 K and Coulomb scattering below150 K, respectively. Coulomb scattering was intensified by the accumulated inversion charges in the Si cap layer of this Si/Si Ge heterostructure, which led to a degradation of carrier mobility in the Si Ge channel, especially at low temperature.
