A multi-finger power SiGe heterojunction bipolar transistor （HBT） with non-uniform finger spacing was fabricated to improve thermal stability. Experimental results show that the peak temperature is reduced by 22K co...A multi-finger power SiGe heterojunction bipolar transistor （HBT） with non-uniform finger spacing was fabricated to improve thermal stability. Experimental results show that the peak temperature is reduced by 22K compared with that of an HBT with uniform finger spacing in the same operating conditions. The temperature profile across the device can be improved at different biases for the same HBT with non-uniform finger spacing. Because of the decrease in peak temperature and the improvement of temperature profile, the power SiGe HBT with non-uniform spacing can operate at higher bias and hence has higher power handling capability.展开更多
A wideband dual-feedback low noise amplifier （LNA） was analyzed, designed and implemented using SiGe heterojunction bipolar transistor （HBT） technology. The design analysis in terms of gain, input and output match...A wideband dual-feedback low noise amplifier （LNA） was analyzed, designed and implemented using SiGe heterojunction bipolar transistor （HBT） technology. The design analysis in terms of gain, input and output matching, noise and poles for the amplifier was presented in detail. The area of the complete chip die, including bonding pads and seal ring, was 655 μm × 495 μm. The on-wafer measurements on the fabricated wideband LNA sample demonstrated good performance： a small-signal power gain of 33 dB with 3-dB bandwidth at 3.3 GHz was achieved; the input and output return losses were better than - 10 dB from 100 MHz to 4 GHz and to 6 GHz, respectively; the noise figure was lower than 4.25 dB from 100 MHz to 6 GHz; with a 5 V supply, the values of OPtdB and OIP3 were 1.7 dBm and 11 dBm at 3-dB bandwidth, respectively.展开更多
文摘A multi-finger power SiGe heterojunction bipolar transistor （HBT） with non-uniform finger spacing was fabricated to improve thermal stability. Experimental results show that the peak temperature is reduced by 22K compared with that of an HBT with uniform finger spacing in the same operating conditions. The temperature profile across the device can be improved at different biases for the same HBT with non-uniform finger spacing. Because of the decrease in peak temperature and the improvement of temperature profile, the power SiGe HBT with non-uniform spacing can operate at higher bias and hence has higher power handling capability.
基金Supported by the National Science and Technology Major Project of the Ministry of Science and Technology of China(No.2009ZX02303-003)
文摘A wideband dual-feedback low noise amplifier （LNA） was analyzed, designed and implemented using SiGe heterojunction bipolar transistor （HBT） technology. The design analysis in terms of gain, input and output matching, noise and poles for the amplifier was presented in detail. The area of the complete chip die, including bonding pads and seal ring, was 655 μm × 495 μm. The on-wafer measurements on the fabricated wideband LNA sample demonstrated good performance： a small-signal power gain of 33 dB with 3-dB bandwidth at 3.3 GHz was achieved; the input and output return losses were better than - 10 dB from 100 MHz to 4 GHz and to 6 GHz, respectively; the noise figure was lower than 4.25 dB from 100 MHz to 6 GHz; with a 5 V supply, the values of OPtdB and OIP3 were 1.7 dBm and 11 dBm at 3-dB bandwidth, respectively.
