Electrical characteristics of SiGe-on-insulator nMOSFET and SiGe-silicon-on-aluminum nitride nMOSFET

This paper investigates the electrical characteristics and temperature distribution of strained Si/SiGe n-type metal oxide semiconductor field effect transistor （nMOSFET） fabricated on silicon-on-aluminum nitride （SOAN） substrate. This novel structure is named SGSOAN nMOSFET. A comparative study of self-heating effect of nMOSFET fabricated on SGOI and SGSOAN is presented. Numerical results show that this novel SGSOAN structure can greatly eliminate excessive self-heating in devices, which gives a more promising application for silicon on insulator to work at high temperatures.

一维硅锗纳米复合材料的制备及在场效应晶体管中的应用

一维硅锗纳米复合材料，主要包括硅锗纳米线异质结与纳米管，具有优异的电学、光学等性能，易与现代以硅为基础的微电子工业相兼容，所以在纳米器件等领域得到了广泛重视。总结了一维硅锗纳米复合材料的研究现状和相关的制备方法，重点评述了在纳米场效应晶体管中的应用，并对其研究前景做了展望。