A new method for fabricating ordered porous silicon is reported. A two-dimensional silica nanosphere array is used as a template with a hydrofluoric acid-hydrogen peroxide solution for etching the nanospheres. The ini...A new method for fabricating ordered porous silicon is reported. A two-dimensional silica nanosphere array is used as a template with a hydrofluoric acid-hydrogen peroxide solution for etching the nanospheres. The initial diameter and distribution of the holes in the resulting porous silicon layer are determined by the size and distribution of the silica nanospheres. The corrosion time can be used to control the depths of the holes. It is found that the presence of a SiO2 layer, formed by the oxidation of the rough internal surface of the hole, is the primary reason allowing the corrosion to proceed. Ultraviolet reflection and thermal conductivity measurements show that the diameter and distribution of the holes have a great influence on properties of the porous silicon.展开更多
LaMnO3 catalysts with three-dimensionally ordered holes perovskite structure were prepared via closepacked SiO2 template synthesized by Stober-Frink method. SEM, XRD and BET were employed to characterize the microstru...LaMnO3 catalysts with three-dimensionally ordered holes perovskite structure were prepared via closepacked SiO2 template synthesized by Stober-Frink method. SEM, XRD and BET were employed to characterize the microstructure, phases and specific surface area. CV method was used to the oxygen electrode beha-vior of catalysts. Diameter of the holes was about 330 nm, corresponding to the size of SiO2 template. Full-cell discharge tests were performed on aluminum-air battery fabricated by porous LaMnO3.Results showed that the discharge performance of porous LaMnO3 were 1.54 V, 1.42 V and 1.24 V respectively when the discharge currents were set at 5 mA/cm^2,10 mA/cm^2 and 20 mA/cm^2, respectively, which were higher than that of LaMnO3 prepared by coprecipitation method（1.33 V, 1.09 V, 0.63 V, respectively）.展开更多
基金Supported by the National Natural Science Foundation of China under Grant Nos 10804026 and 51101049the Natural Science Foundation of Hebei Province under Grant Nos A2013205101 and A2014205051the Hebei Talent Cultivation Foundation under Grant No A201400119
文摘A new method for fabricating ordered porous silicon is reported. A two-dimensional silica nanosphere array is used as a template with a hydrofluoric acid-hydrogen peroxide solution for etching the nanospheres. The initial diameter and distribution of the holes in the resulting porous silicon layer are determined by the size and distribution of the silica nanospheres. The corrosion time can be used to control the depths of the holes. It is found that the presence of a SiO2 layer, formed by the oxidation of the rough internal surface of the hole, is the primary reason allowing the corrosion to proceed. Ultraviolet reflection and thermal conductivity measurements show that the diameter and distribution of the holes have a great influence on properties of the porous silicon.
基金supported by the National Natural Science Foundation of China (Grant Nos. U1137601 and 51466005)the Science and Technology Program of Yunnan Province (Grant No.2014RD016)the Program for Innovative Research Team of Yunnan Province (Grant No. 2014HC013)
文摘LaMnO3 catalysts with three-dimensionally ordered holes perovskite structure were prepared via closepacked SiO2 template synthesized by Stober-Frink method. SEM, XRD and BET were employed to characterize the microstructure, phases and specific surface area. CV method was used to the oxygen electrode beha-vior of catalysts. Diameter of the holes was about 330 nm, corresponding to the size of SiO2 template. Full-cell discharge tests were performed on aluminum-air battery fabricated by porous LaMnO3.Results showed that the discharge performance of porous LaMnO3 were 1.54 V, 1.42 V and 1.24 V respectively when the discharge currents were set at 5 mA/cm^2,10 mA/cm^2 and 20 mA/cm^2, respectively, which were higher than that of LaMnO3 prepared by coprecipitation method（1.33 V, 1.09 V, 0.63 V, respectively）.
