SiO_2介质材料辐射损伤测试结构设计

为研究CMOS器件与电路的辐射效应,文中提出了SiO2介质材料辐射损伤测试结构的设计思想。针对栅氧化层和场氧化层在器件中位置、作用和结构上的差异,分别设计了用于场氧化层测试的多栅结构和用于栅氧化层测试的封闭栅结构以及Dog-Bone栅结构。为CMOS器件辐射损伤机理及辐射加固提供了新的样品和研究方法。

基于LabView的SiO_2抗辐射能力无损评价系统

基于MOS器件中SiO2介质材料噪声灵敏表征技术,提出了SiO2介质材料抗辐射能力无损评价方法。结合噪声测试的经验及该模型为理论分析要求,使用LabView平台开发SiO2介质材料抗辐射无损评价系统。本系统由数据采集和数据分析两个部分组成,数据采集部分主要负责噪声时间序列与频谱的采集与保存,数据分析部分的主要功能为时间序和频谱的特征值分析及SiO2介质材料抗辐射能力分析与相应器件的筛选。实验结果表明,软件性能可靠,对MOSFETT抗辐射能力的评价准确。

The multiscale modeling and data mining of high-temperature dielectrics of SiO_2/SiO_2 composites

The high temperature dielectrics of Quartz fiber-reinforced silicon dioxide ceramic （Si02/SiO2 ） composites were studied both theoretically and experimentally. A multi-scale theoretical model was developed based on the theory of dielectrics. It was realized to predict dielectric properties at higher temperature （ 〉 1200 ℃） by experimental data mining for correlative coefficients in model. The results show that the dielectrics of SiO2/SiO2, which were calculated with the theoretical model, were in agreement with experimental measured value.