本论文主要探讨SiO2奈米绝缘层对GaAs/Ge异质结构光电特性的影响之研究。本实验主要探讨分为三部分,其一是探讨以射频磁控溅镀技术所成长之砷化镓薄膜磊晶质量及特性分析;其二为透过薄膜分析GaAs/Ge和GaAs/SiO2/Ge两种异质结构,讨论SiO...本论文主要探讨SiO2奈米绝缘层对GaAs/Ge异质结构光电特性的影响之研究。本实验主要探讨分为三部分,其一是探讨以射频磁控溅镀技术所成长之砷化镓薄膜磊晶质量及特性分析;其二为透过薄膜分析GaAs/Ge和GaAs/SiO2/Ge两种异质结构,讨论SiO2厚度变化对组件结构的影响;其三则是探讨GaAs/SiO2/Ge异质结构的光电特性。在GaAs/SiO2/Ge的异质结构中,除了大约在53?的GaAs绕射峰之外,大约在52?则有另一个强度很强的绕射峰出现,该绕射峰应为氧化镓(Ga2O3),晶向为(024),推测应属SiO2的氧(O2)及GaAs的镓(Ga)所反应之生成物。当沉积时间增加时,GaAs的绕射峰强度减弱,Ga2O3的绕射峰强度增强,可能是SiO2引进氧形成Ga2O3,而造成砷的自生点缺陷(native point defect)增加所导致。在照光的情形下,在GaAs的膜层中之砷的自生点缺陷会捕捉光生电子,造成光电流减少,进而影响GaAs/SiO2/Ge异质结构的光特性。展开更多
Silicon-based planar neuroprobes are composed of silicon substrate,conducting layer,and insulation layers of SiO 2 or SiN membrane.The insulation layer is very important because it affects many key parameters of neupr...Silicon-based planar neuroprobes are composed of silicon substrate,conducting layer,and insulation layers of SiO 2 or SiN membrane.The insulation layer is very important because it affects many key parameters of neuprobes,like impedance,SNR(signal noise ratio),reliability,etc.Monolayer membrane of SiO 2 or SiN are not good choices for insulation layer,since defects and residual stress in these layers can induce bad passivation.In this paper a composite insulation structure is studied,with thermal SiO 2 as the lower insulation layer and with multilayer membrane composed of PECVD SiO 2 and SiN as the upper insulation layer.This structure not only solves the problem of residual stress but also ensures a good probe passivation.So it's a good choice for insulation layer of neuroprobes.展开更多
文摘本论文主要探讨SiO2奈米绝缘层对GaAs/Ge异质结构光电特性的影响之研究。本实验主要探讨分为三部分,其一是探讨以射频磁控溅镀技术所成长之砷化镓薄膜磊晶质量及特性分析;其二为透过薄膜分析GaAs/Ge和GaAs/SiO2/Ge两种异质结构,讨论SiO2厚度变化对组件结构的影响;其三则是探讨GaAs/SiO2/Ge异质结构的光电特性。在GaAs/SiO2/Ge的异质结构中,除了大约在53?的GaAs绕射峰之外,大约在52?则有另一个强度很强的绕射峰出现,该绕射峰应为氧化镓(Ga2O3),晶向为(024),推测应属SiO2的氧(O2)及GaAs的镓(Ga)所反应之生成物。当沉积时间增加时,GaAs的绕射峰强度减弱,Ga2O3的绕射峰强度增强,可能是SiO2引进氧形成Ga2O3,而造成砷的自生点缺陷(native point defect)增加所导致。在照光的情形下,在GaAs的膜层中之砷的自生点缺陷会捕捉光生电子,造成光电流减少,进而影响GaAs/SiO2/Ge异质结构的光特性。
文摘Silicon-based planar neuroprobes are composed of silicon substrate,conducting layer,and insulation layers of SiO 2 or SiN membrane.The insulation layer is very important because it affects many key parameters of neuprobes,like impedance,SNR(signal noise ratio),reliability,etc.Monolayer membrane of SiO 2 or SiN are not good choices for insulation layer,since defects and residual stress in these layers can induce bad passivation.In this paper a composite insulation structure is studied,with thermal SiO 2 as the lower insulation layer and with multilayer membrane composed of PECVD SiO 2 and SiN as the upper insulation layer.This structure not only solves the problem of residual stress but also ensures a good probe passivation.So it's a good choice for insulation layer of neuroprobes.
