The energy deposition for low-energy electron beam on Si-SiO2 models was calculated by Monte-Carlo method. Making use of electron paramagnetic resonance (EPR) technique, an investigation of the effect of dopant type a...The energy deposition for low-energy electron beam on Si-SiO2 models was calculated by Monte-Carlo method. Making use of electron paramagnetic resonance (EPR) technique, an investigation of the effect of dopant type and concentration on EPR signal variations was carried out by using p-type and n-type silicon(111) wafers with concentration of 1×1015 cm 3 and 1×1017 cm 3, and the changes of intensity of defect paramagnetic centers before and after irradiation of electrons were compared. The chemical states of Si-SiO2 structure were determined by X-ray photoelectrons spectroscopy(XPS). The results clearly indicate that the effects of dopant variations (type and concentration) are of obvious difference. Compared with p-type silicon, n-type silicon, especially with higher dopant concentration, tends to produce defect at the interface under low-energy electron irradiation with certain flux, which arises from the hole trapped on a nonbridging oxygen atom bonded to P. It is represented in the form of distinct changes of POHC intensity and P2P spectrum. According to the theoretical and experimental data, the relationship among electron energy deposition, chemical states of element Si at SiO2 -Si(111) interface, and radiation effect were analyzed and discussed.展开更多
基金supported by Major Foundation for Development of Science and Technology of China Academy of Engineering Physics (No. 2007A02001)
文摘The energy deposition for low-energy electron beam on Si-SiO2 models was calculated by Monte-Carlo method. Making use of electron paramagnetic resonance (EPR) technique, an investigation of the effect of dopant type and concentration on EPR signal variations was carried out by using p-type and n-type silicon(111) wafers with concentration of 1×1015 cm 3 and 1×1017 cm 3, and the changes of intensity of defect paramagnetic centers before and after irradiation of electrons were compared. The chemical states of Si-SiO2 structure were determined by X-ray photoelectrons spectroscopy(XPS). The results clearly indicate that the effects of dopant variations (type and concentration) are of obvious difference. Compared with p-type silicon, n-type silicon, especially with higher dopant concentration, tends to produce defect at the interface under low-energy electron irradiation with certain flux, which arises from the hole trapped on a nonbridging oxygen atom bonded to P. It is represented in the form of distinct changes of POHC intensity and P2P spectrum. According to the theoretical and experimental data, the relationship among electron energy deposition, chemical states of element Si at SiO2 -Si(111) interface, and radiation effect were analyzed and discussed.
