With the progress of ULSI technology, materials with low dielectric constant are required to replace SiO2 film as the interlayer to scale down the interconnection delay. Fluorinated Si oxide thin films (SiOF) are a pr...With the progress of ULSI technology, materials with low dielectric constant are required to replace SiO2 film as the interlayer to scale down the interconnection delay. Fluorinated Si oxide thin films (SiOF) are a promising material for the low dielectric constant and the process compatibility in existing technology. However, SiOF films are liable to absorb moisture when exposed to air. By treating the SiOF films with O-2 plasma, it was found that the moisture resistibility of SiOF films was remarkably improved. The mechanism of the improvement in stability of dielectric constant was investigated. The results show that: 1) F atoms dissociated from the films and the bond angle of Si-O-Si decreased. 2) The plasma treatment enhanced the strength of Si-F bonds by removing unstable =SiF2 structures in the films. Resistibility of SiOF films in moisture was improved.展开更多
The requirement of reduced RC delay and cross-talk for multilevel interconnect ULSI applications has enthusiastically driven process development for seeking suitable low dielectric constant materials with sufficient k...The requirement of reduced RC delay and cross-talk for multilevel interconnect ULSI applications has enthusiastically driven process development for seeking suitable low dielectric constant materials with sufficient k value. The replacement of HDP FSG(k-3.5-3.6) with conventional SiO2 as a manufacturable intermetal dielectric layer (IMD) has achieved 0.18μm ULSI interconnect technology. The electrical test result, via resislance as well as multilevel CMOS transistor characteristics (such as plasma damage, device degradation, hot carrier, etc.) are basically compatible to those conventional oxide as IMD. Assessment of metal line-to-line capacitance reduction using comb capacitors yields values of reduction range 10%-14% comparing FSG to convention oxide. The effectiveness of low-k FSG in circuit performance is also demonstrated. Comparisons of ring-oscillator speed performance for metal runners with various width and space show speed improvement approximately 10% for the FSG. Impact of FSG on reliability is evaluated and results show manufacturing compatibility to conventional SiO2.展开更多
基金The work was supported by the National Natural Science Foundation of China(No.69776026)the Foundation for University Key Teacher by the Ministry of Education.
文摘With the progress of ULSI technology, materials with low dielectric constant are required to replace SiO2 film as the interlayer to scale down the interconnection delay. Fluorinated Si oxide thin films (SiOF) are a promising material for the low dielectric constant and the process compatibility in existing technology. However, SiOF films are liable to absorb moisture when exposed to air. By treating the SiOF films with O-2 plasma, it was found that the moisture resistibility of SiOF films was remarkably improved. The mechanism of the improvement in stability of dielectric constant was investigated. The results show that: 1) F atoms dissociated from the films and the bond angle of Si-O-Si decreased. 2) The plasma treatment enhanced the strength of Si-F bonds by removing unstable =SiF2 structures in the films. Resistibility of SiOF films in moisture was improved.
文摘The requirement of reduced RC delay and cross-talk for multilevel interconnect ULSI applications has enthusiastically driven process development for seeking suitable low dielectric constant materials with sufficient k value. The replacement of HDP FSG(k-3.5-3.6) with conventional SiO2 as a manufacturable intermetal dielectric layer (IMD) has achieved 0.18μm ULSI interconnect technology. The electrical test result, via resislance as well as multilevel CMOS transistor characteristics (such as plasma damage, device degradation, hot carrier, etc.) are basically compatible to those conventional oxide as IMD. Assessment of metal line-to-line capacitance reduction using comb capacitors yields values of reduction range 10%-14% comparing FSG to convention oxide. The effectiveness of low-k FSG in circuit performance is also demonstrated. Comparisons of ring-oscillator speed performance for metal runners with various width and space show speed improvement approximately 10% for the FSG. Impact of FSG on reliability is evaluated and results show manufacturing compatibility to conventional SiO2.
