High-k materials as an alternative dielectric layer for SiC power devices have the potential to reduce interfacial state defects and improve MOS channel conduction capability.Besides,under identical conditions of gate...High-k materials as an alternative dielectric layer for SiC power devices have the potential to reduce interfacial state defects and improve MOS channel conduction capability.Besides,under identical conditions of gate oxide thickness and gate voltage,the high-k dielectric enables a greater charge accumulation in the channel region,resulting in a larger number of free electrons available for conduction.However,the lower energy band gap of high-k materials leads to significant leakage currents at the interface with Si C,which greatly affects device reliability.By inserting a layer of SiO_(2)between the high-k material and Si C,the interfacial barrier can be effectively widened and hence the leakage current will be reduced.In this study,the optimal thickness of the intercalated SiO_(2)was determined by investigating and analyzing the gate dielectric breakdown voltage and interfacial defects of a dielectric stack composed of atomic-layer-deposited Al_(2)O_(3)layer and thermally nitride SiO_(2).Current-voltage and high-frequency capacitance-voltage measurements were performed on metal-oxide-semiconductor test structures with 35 nm thick Al_(2)O_(3)stacked on 1 nm,2 nm,3 nm,6 nm,or 9 nm thick nitride SiO_(2).Measurement results indicated that the current conducted through the oxides was affected by the thickness of the nitride oxide and the applied electric field.Finally,a saturation thickness of stacked SiO_(2)that contributed to dielectric breakdown and interfacial band offsets was identified.The findings in this paper provide a guideline for the SiC gate dielectric stack design with the breakdown strength and the interfacial state defects considered.展开更多
The formation characteristics of calcium aluminates in the CaO-Al2O3-SiO2 system with sodium oxide was investigated by XRD, SEM-EDS and DSC-TG technologies. The main phases in the clinker after sintering at 1350 °...The formation characteristics of calcium aluminates in the CaO-Al2O3-SiO2 system with sodium oxide was investigated by XRD, SEM-EDS and DSC-TG technologies. The main phases in the clinker after sintering at 1350 °C are 12CaO?7Al2O3, 2CaO?Al2O3?SiO2 and 2CaO?SiO2 when the mass ratio of Al2O3 to SiO2 is 3.0 and the molar ratio of CaO to Al2O3 is 1.0. The proportion of 12CaO?7Al2O3 increases with the increase of Na2O addition when the molar ratio of Na2O to Al2O3 is from 0 to 0.4, while the proportion of 2CaO?Al2O3?SiO2 decreases with the increase of Na2O addition. Na2O forms solid solution in 12CaO?7Al2O3, which increases the volume of elementary cell of 12CaO?7Al2O3. The formation temperature of 12CaO?7Al2O3 is decreased by 30 °C when the molar ratio of Na2O to Al2O3 increases from 0 to 0.4 determined by DSC. The alumina leaching property of clinker increases obviously with the increase of Na2O addition.展开更多
The effects of Fe2O3 content on the microstructure and mechanical properties of the CaO-Al2O3-SiO2 system were investigated by differential thermal analysis（DTA）, X-ray diffraction（XRD）, scanning electron microsc...The effects of Fe2O3 content on the microstructure and mechanical properties of the CaO-Al2O3-SiO2 system were investigated by differential thermal analysis（DTA）, X-ray diffraction（XRD）, scanning electron microscopy（SEM）, electron spin resonance（ESR）, and Mssbauer spectroscopy. The results show that the addition of Fe2O3 does not affect the main crystalline phase in the prepared glasses, but it reduces the crystallisation peak temperature, increases the crystallisation activation energy, and reduces the crystal granularity. The ESR results indicate that Fe2O3 can promote crystallization, as it leads to the phase separation of the CaO-Al2O3-SiO2 system due to axial distortion. Moreover, Fe2O3 alters the network structure of the CaO-Al2O3-SiO2 system, allowing Fe3＋ to enter octahedral sites that exhibit higher symmetry than tetrahedral sites. All of these factors are favourable to increasing the bending strength. The Mssbauer results reveal that there are two types of coordination for both Fe3＋ and Fe2＋ and the bending strength of the CaO-Al2O3-SiO2 system increases with the amount of six-coordinate Fe3＋. The increasing interaction between Fe3＋ and Fe2＋ can also enhance the bending strength of the CaO-Al2O3-SiO2 system. The microhardness of the CaO-Al2O3-SiO2 system was determined to be HV 896.9 and the bending strength to be 217 MPa under the heat treatment conditions of nucleation temperature of 700 °C and nucleation time of 2 h, crystallization temperature of 910 °C and crystallization time of 3 h.展开更多
基金Project supported by the Key Area Research and Development Program of Guangdong Province of China(Grant No.2021B0101300005)the National Key Research and Development Program of China(Grant No.2021YFB3401603)。
文摘High-k materials as an alternative dielectric layer for SiC power devices have the potential to reduce interfacial state defects and improve MOS channel conduction capability.Besides,under identical conditions of gate oxide thickness and gate voltage,the high-k dielectric enables a greater charge accumulation in the channel region,resulting in a larger number of free electrons available for conduction.However,the lower energy band gap of high-k materials leads to significant leakage currents at the interface with Si C,which greatly affects device reliability.By inserting a layer of SiO_(2)between the high-k material and Si C,the interfacial barrier can be effectively widened and hence the leakage current will be reduced.In this study,the optimal thickness of the intercalated SiO_(2)was determined by investigating and analyzing the gate dielectric breakdown voltage and interfacial defects of a dielectric stack composed of atomic-layer-deposited Al_(2)O_(3)layer and thermally nitride SiO_(2).Current-voltage and high-frequency capacitance-voltage measurements were performed on metal-oxide-semiconductor test structures with 35 nm thick Al_(2)O_(3)stacked on 1 nm,2 nm,3 nm,6 nm,or 9 nm thick nitride SiO_(2).Measurement results indicated that the current conducted through the oxides was affected by the thickness of the nitride oxide and the applied electric field.Finally,a saturation thickness of stacked SiO_(2)that contributed to dielectric breakdown and interfacial band offsets was identified.The findings in this paper provide a guideline for the SiC gate dielectric stack design with the breakdown strength and the interfacial state defects considered.
基金Projects(51174054,51104041)supported by the National Natural Science Foundation of China
文摘The formation characteristics of calcium aluminates in the CaO-Al2O3-SiO2 system with sodium oxide was investigated by XRD, SEM-EDS and DSC-TG technologies. The main phases in the clinker after sintering at 1350 °C are 12CaO?7Al2O3, 2CaO?Al2O3?SiO2 and 2CaO?SiO2 when the mass ratio of Al2O3 to SiO2 is 3.0 and the molar ratio of CaO to Al2O3 is 1.0. The proportion of 12CaO?7Al2O3 increases with the increase of Na2O addition when the molar ratio of Na2O to Al2O3 is from 0 to 0.4, while the proportion of 2CaO?Al2O3?SiO2 decreases with the increase of Na2O addition. Na2O forms solid solution in 12CaO?7Al2O3, which increases the volume of elementary cell of 12CaO?7Al2O3. The formation temperature of 12CaO?7Al2O3 is decreased by 30 °C when the molar ratio of Na2O to Al2O3 increases from 0 to 0.4 determined by DSC. The alumina leaching property of clinker increases obviously with the increase of Na2O addition.
基金Project(50974090)supported by the National Natural Science Foundation of ChinaProjects(JCYJ20140418182819155,JCYJ20130329113849606)supported by the Shenzhen Dedicated Funding of Strategic Emerging Industry Development Program,China
文摘The effects of Fe2O3 content on the microstructure and mechanical properties of the CaO-Al2O3-SiO2 system were investigated by differential thermal analysis（DTA）, X-ray diffraction（XRD）, scanning electron microscopy（SEM）, electron spin resonance（ESR）, and Mssbauer spectroscopy. The results show that the addition of Fe2O3 does not affect the main crystalline phase in the prepared glasses, but it reduces the crystallisation peak temperature, increases the crystallisation activation energy, and reduces the crystal granularity. The ESR results indicate that Fe2O3 can promote crystallization, as it leads to the phase separation of the CaO-Al2O3-SiO2 system due to axial distortion. Moreover, Fe2O3 alters the network structure of the CaO-Al2O3-SiO2 system, allowing Fe3＋ to enter octahedral sites that exhibit higher symmetry than tetrahedral sites. All of these factors are favourable to increasing the bending strength. The Mssbauer results reveal that there are two types of coordination for both Fe3＋ and Fe2＋ and the bending strength of the CaO-Al2O3-SiO2 system increases with the amount of six-coordinate Fe3＋. The increasing interaction between Fe3＋ and Fe2＋ can also enhance the bending strength of the CaO-Al2O3-SiO2 system. The microhardness of the CaO-Al2O3-SiO2 system was determined to be HV 896.9 and the bending strength to be 217 MPa under the heat treatment conditions of nucleation temperature of 700 °C and nucleation time of 2 h, crystallization temperature of 910 °C and crystallization time of 3 h.
