This paper reports that the SiOx barrier films are deposited on polyethylene terephthalate substrate by plasmaenhanced chemical vapour deposition （PECVD） for the application of transparent barrier packaging. The var...This paper reports that the SiOx barrier films are deposited on polyethylene terephthalate substrate by plasmaenhanced chemical vapour deposition （PECVD） for the application of transparent barrier packaging. The variations of 02/Tetramethyldisiloxane （TMDSO） ratio and input power in radio frequency （RF） plasma are carried out to optimize barrier properties of the SiOx coated film. The properties of the coatings are characterized by Fourier transform infrared, water vapour transmission rate （WVTR）, oxygen transmission rate （OTR）, and atomic force microscopy analysers. It is found that the 02/TMDSO ratio exceeding 2：1 and the input power over 200 W yield SiOx films with low carbon contents which can be good to the barrier （WVTR and OTR） properties of the SiOx coatings. Also, the film properties not only depend on oxygen concentration of the inlet gas mixtures and input power, but also relate to the surface morphology of the coating.展开更多
This paper presents a study of amorphous SiO<sub>x</sub> thin films by means of Variable Angle Spectroscopic Ellipsometry (VASE) technique. Tauc Lorentz, Lorentz and Cauchy models have been used to obtain ...This paper presents a study of amorphous SiO<sub>x</sub> thin films by means of Variable Angle Spectroscopic Ellipsometry (VASE) technique. Tauc Lorentz, Lorentz and Cauchy models have been used to obtain physical thickness and complex refractive index (n and k) from experimental data. In order to obtain a wide range to x stoichiometry values, the films were prepared by vacuum thermal evaporation of SiO on glass substrates, under different and controlled deposition conditions.展开更多
In this paper the elastic properties of SiOx film are investigated quantitatively for local fixed point and qualitatively for overall area by atomic force acoustic microscopy （AFAM） in which the sample is vibrated a...In this paper the elastic properties of SiOx film are investigated quantitatively for local fixed point and qualitatively for overall area by atomic force acoustic microscopy （AFAM） in which the sample is vibrated at the ultrasonic frequency while the sample surface is touched and scanned with the tip contacting the sample respectively for fixed point and continuous measurements. The SiOx films on the silicon wafers are prepared by the plasma enhanced chemical vapour deposition （PECVD）, The local contact stiffness of the tip-SiOx film is calculated from the contact resonance spectrum measured with the atomic force acoustic microscopy. Using the reference approach, indentation modulus of SiOx film for fixed point is obtained. The images of cantilever amplitude are also visualized and analysed when the SiOx surface is excited at a fixed frequency. The results show that the acoustic amplitude images can reflect the elastic properties of the sample.展开更多
A new kind of SiOx film on Al substrate,prepared by Ambient Pressure Chemical Vapor Deposition (APCVD) is reported in this paper. It is proposed that the SiOx particles as products of SiH4 and O2 reaction deposited on...A new kind of SiOx film on Al substrate,prepared by Ambient Pressure Chemical Vapor Deposition (APCVD) is reported in this paper. It is proposed that the SiOx particles as products of SiH4 and O2 reaction deposited on the heated Al surface, followed by close packing and further growth to form the thin film. The morphology, composition and microstructure of the film are characterized by SEM, XPS, XRD and HRTEM. The results show that the SiO, film comprises a majority of uncrystalline structure with a fraction of dispersed ordered zones and the atomic ratio of Si/O in the film is 1:1.60-1:1.75. The tests show that the film is well-bonded with the substrate.展开更多
文摘This paper reports that the SiOx barrier films are deposited on polyethylene terephthalate substrate by plasmaenhanced chemical vapour deposition （PECVD） for the application of transparent barrier packaging. The variations of 02/Tetramethyldisiloxane （TMDSO） ratio and input power in radio frequency （RF） plasma are carried out to optimize barrier properties of the SiOx coated film. The properties of the coatings are characterized by Fourier transform infrared, water vapour transmission rate （WVTR）, oxygen transmission rate （OTR）, and atomic force microscopy analysers. It is found that the 02/TMDSO ratio exceeding 2：1 and the input power over 200 W yield SiOx films with low carbon contents which can be good to the barrier （WVTR and OTR） properties of the SiOx coatings. Also, the film properties not only depend on oxygen concentration of the inlet gas mixtures and input power, but also relate to the surface morphology of the coating.
文摘This paper presents a study of amorphous SiO<sub>x</sub> thin films by means of Variable Angle Spectroscopic Ellipsometry (VASE) technique. Tauc Lorentz, Lorentz and Cauchy models have been used to obtain physical thickness and complex refractive index (n and k) from experimental data. In order to obtain a wide range to x stoichiometry values, the films were prepared by vacuum thermal evaporation of SiO on glass substrates, under different and controlled deposition conditions.
基金Project supported by the National Natural Science Foundation of China(Grant No.50775005)
文摘In this paper the elastic properties of SiOx film are investigated quantitatively for local fixed point and qualitatively for overall area by atomic force acoustic microscopy （AFAM） in which the sample is vibrated at the ultrasonic frequency while the sample surface is touched and scanned with the tip contacting the sample respectively for fixed point and continuous measurements. The SiOx films on the silicon wafers are prepared by the plasma enhanced chemical vapour deposition （PECVD）, The local contact stiffness of the tip-SiOx film is calculated from the contact resonance spectrum measured with the atomic force acoustic microscopy. Using the reference approach, indentation modulus of SiOx film for fixed point is obtained. The images of cantilever amplitude are also visualized and analysed when the SiOx surface is excited at a fixed frequency. The results show that the acoustic amplitude images can reflect the elastic properties of the sample.
基金the Nationa1 Science Foundation of China for financial support(contract no.50271065)to this project
文摘A new kind of SiOx film on Al substrate,prepared by Ambient Pressure Chemical Vapor Deposition (APCVD) is reported in this paper. It is proposed that the SiOx particles as products of SiH4 and O2 reaction deposited on the heated Al surface, followed by close packing and further growth to form the thin film. The morphology, composition and microstructure of the film are characterized by SEM, XPS, XRD and HRTEM. The results show that the SiO, film comprises a majority of uncrystalline structure with a fraction of dispersed ordered zones and the atomic ratio of Si/O in the film is 1:1.60-1:1.75. The tests show that the film is well-bonded with the substrate.
