本文报道了4.2～300K 温度范围的富含 Si 的 Si_(1-x)Ge_x 合金的晶格振动红外透射光谱.实验首次观察到 Ge 杂质诱发的一个新的共振模吸收.结果还表明,直拉法生长的Si_(1-x)Ge_x 合金存在严重的氧沾污,且氧的振动峰随温度的降低向高频...本文报道了4.2～300K 温度范围的富含 Si 的 Si_(1-x)Ge_x 合金的晶格振动红外透射光谱.实验首次观察到 Ge 杂质诱发的一个新的共振模吸收.结果还表明,直拉法生长的Si_(1-x)Ge_x 合金存在严重的氧沾污,且氧的振动峰随温度的降低向高频方向移动.展开更多
采用异质结双台面双极型结构设计微波功率器件,选择Si作发射区和集电区,Si1-xGex合金作基区的n p n型异质结双极性晶体管,利用数学方法,通过实验数据,采用MATLAB得到了一个比线性化更精确的禁带宽度Eg在300K时关于Ge组分变化的方程。并...采用异质结双台面双极型结构设计微波功率器件,选择Si作发射区和集电区,Si1-xGex合金作基区的n p n型异质结双极性晶体管,利用数学方法,通过实验数据,采用MATLAB得到了一个比线性化更精确的禁带宽度Eg在300K时关于Ge组分变化的方程。并用数值方法计算出集电区电流密度Jc随VBE变化的直流方程,与实验结果相符,并得到一个最佳的Ge组分值。展开更多
The etch characteristics of Si_1-xGex films in HNO3:H2O:HF were examined. The etch rate ratio (etch selectivity) between Si_1-xGex and Si escalated with the growth of HNO3 concentration at low concentration level, and...The etch characteristics of Si_1-xGex films in HNO3:H2O:HF were examined. The etch rate ratio (etch selectivity) between Si_1-xGex and Si escalated with the growth of HNO3 concentration at low concentration level, and when the HNO3 concentration exceeded a critical level the etch selectivity descended with higher HNO3 concentration. The dependence of etch selectivity on the HNO3 concentration was due to the higher critical HNO3 concentration for etching Si than that for etching Si1-xGex. Since the Ge-Ge bond energy was weaker than that of Si-Si and Si-Ge, the Ge atoms were oxidized preferentially once the HNO3 composition exceeded the critical concentration of etching Si1-xGex,which was manifested by the XPS spectra of Si1-xGex etched in HNO3:H2O:HF. When the HNO3 volume rose to another critical value, the significant growth of the Si etch rate low-ered the etch selectivity. Although both the etch rates of Si1-xGex and Si dropped with lower HF concentration, the etch rate ra-tio of Si1-xGex to Si boosted remarkably due to the water-soluble characteristics of GeO2.展开更多
Hetero-element doped lithium orthosilicates have been considered as advanced tritium breeders due to the superior performances.In this work,Li_(4)Si_(1-x)Ti_(x)O_(4) ceramics were prepared by proprietary hydrothermal ...Hetero-element doped lithium orthosilicates have been considered as advanced tritium breeders due to the superior performances.In this work,Li_(4)Si_(1-x)Ti_(x)O_(4) ceramics were prepared by proprietary hydrothermal process and multistage reactive sintering.The reaction mechanism of Li_(4)Si_(1-x)Ti_(x)O_(4) was put forward.XRD and SEM analyses indicate that insertion of Ti leads to lattice expansion,which promotes the grain growth and changes the fracture mode.The compressive tests show that the crush load increases almost four times by increasing x from 0 to 0.2.However,the thermal conductivity and ionic conductivity are the best when x=0.05 and x=0.1,respectively.Thermal cycling stability of Li_(4)Si_(1-x)Ti_(x)O_(4) pebbles was further appraised through investigating the changes of microstructure and crush load.After undergoing thermal cycling,the Li_(4)Si_(1-x)Ti_(x)O_(4) still show higher crush load compared with Li_(4)SiO_(4),despite Ti segregation in some samples.The x=0.05 sample exhibits excellent thermal cycling stability.In summary,proper amount of Ti doping can improve the crush load,thermal and ionic conductivity,and thermal cycling stability of Li_(4)SiO_(4).展开更多
Mixed crystal strategy is an effective approach of improving the luminescence properties of optical materials and has been adopted widely in many systems.In this paper,the La-mixed Gd_(2)Si_(2)O_(7):Ce polycrystalline...Mixed crystal strategy is an effective approach of improving the luminescence properties of optical materials and has been adopted widely in many systems.In this paper,the La-mixed Gd_(2)Si_(2)O_(7):Ce polycrystalline samples were successfully synthesized by a sol-gel method.The crystal structure and luminescence properties were confirmed and discussed by XRD,UV-Vis luminescence spectra,and XEL,respectively.The vacuum ultraviolet excitation spectra and thermoluminescence glow curves were also systematically investigated and discussed at varied temperature.A combination of the first-principles calculations and optical characterization experiments was employed to study the electronic band structure of host material,revealing that the band gap is narrowed and the 5d_(1) level of Ce^(3+) shifts to higher energy as the La content increases.The luminescence the rmo-stability and activation energy were also measured and calculated.It indicates that thermo-stability is strongly dependent on the La concentration.An effective approach is developed to tune the electronic band structure,luminescence properties and thermostability of(Gd_(1-x)La_(x))_(2)Si_(2)O_(7):Ce scintillator by adjusting La/Gd ratio.展开更多
文摘采用异质结双台面双极型结构设计微波功率器件,选择Si作发射区和集电区,Si1-xGex合金作基区的n p n型异质结双极性晶体管,利用数学方法,通过实验数据,采用MATLAB得到了一个比线性化更精确的禁带宽度Eg在300K时关于Ge组分变化的方程。并用数值方法计算出集电区电流密度Jc随VBE变化的直流方程,与实验结果相符,并得到一个最佳的Ge组分值。
基金supported by the National Natural Science Foundation of China (Grant No. 61006088)the National Basic Research Program of China (973 Program) (Grant No. 2010CB832906)the Natural Sci-ence Foundation of Shanghai (Grant No. 10ZR1436100)
文摘The etch characteristics of Si_1-xGex films in HNO3:H2O:HF were examined. The etch rate ratio (etch selectivity) between Si_1-xGex and Si escalated with the growth of HNO3 concentration at low concentration level, and when the HNO3 concentration exceeded a critical level the etch selectivity descended with higher HNO3 concentration. The dependence of etch selectivity on the HNO3 concentration was due to the higher critical HNO3 concentration for etching Si than that for etching Si1-xGex. Since the Ge-Ge bond energy was weaker than that of Si-Si and Si-Ge, the Ge atoms were oxidized preferentially once the HNO3 composition exceeded the critical concentration of etching Si1-xGex,which was manifested by the XPS spectra of Si1-xGex etched in HNO3:H2O:HF. When the HNO3 volume rose to another critical value, the significant growth of the Si etch rate low-ered the etch selectivity. Although both the etch rates of Si1-xGex and Si dropped with lower HF concentration, the etch rate ra-tio of Si1-xGex to Si boosted remarkably due to the water-soluble characteristics of GeO2.
基金supported by National Natural Science Foundation of China(No.51802257)Natural Science Foundation of Shaanxi Provincial Department of Education(18JK0570)China Postdoctoral Science Foundation(2019M663788).
文摘Hetero-element doped lithium orthosilicates have been considered as advanced tritium breeders due to the superior performances.In this work,Li_(4)Si_(1-x)Ti_(x)O_(4) ceramics were prepared by proprietary hydrothermal process and multistage reactive sintering.The reaction mechanism of Li_(4)Si_(1-x)Ti_(x)O_(4) was put forward.XRD and SEM analyses indicate that insertion of Ti leads to lattice expansion,which promotes the grain growth and changes the fracture mode.The compressive tests show that the crush load increases almost four times by increasing x from 0 to 0.2.However,the thermal conductivity and ionic conductivity are the best when x=0.05 and x=0.1,respectively.Thermal cycling stability of Li_(4)Si_(1-x)Ti_(x)O_(4) pebbles was further appraised through investigating the changes of microstructure and crush load.After undergoing thermal cycling,the Li_(4)Si_(1-x)Ti_(x)O_(4) still show higher crush load compared with Li_(4)SiO_(4),despite Ti segregation in some samples.The x=0.05 sample exhibits excellent thermal cycling stability.In summary,proper amount of Ti doping can improve the crush load,thermal and ionic conductivity,and thermal cycling stability of Li_(4)SiO_(4).
基金Project supported by the National Natural Science Foundation of China(11975220,51972291)the National Key Research and Development Program of China(2016YFB0700204)Natural Science Foundation of Shanghai(16ZR1441100)。
文摘Mixed crystal strategy is an effective approach of improving the luminescence properties of optical materials and has been adopted widely in many systems.In this paper,the La-mixed Gd_(2)Si_(2)O_(7):Ce polycrystalline samples were successfully synthesized by a sol-gel method.The crystal structure and luminescence properties were confirmed and discussed by XRD,UV-Vis luminescence spectra,and XEL,respectively.The vacuum ultraviolet excitation spectra and thermoluminescence glow curves were also systematically investigated and discussed at varied temperature.A combination of the first-principles calculations and optical characterization experiments was employed to study the electronic band structure of host material,revealing that the band gap is narrowed and the 5d_(1) level of Ce^(3+) shifts to higher energy as the La content increases.The luminescence the rmo-stability and activation energy were also measured and calculated.It indicates that thermo-stability is strongly dependent on the La concentration.An effective approach is developed to tune the electronic band structure,luminescence properties and thermostability of(Gd_(1-x)La_(x))_(2)Si_(2)O_(7):Ce scintillator by adjusting La/Gd ratio.
