Morphology and Structure of SiO_2 Film Using Thermal Oxidation Process on(111)Silicon Crystals in Dry Oxygen Atmosphere

By means of scanning electron microscope(SEM)and high voltage electron microscope(HVEM)we have observed and analysed morphology and micro-structure of silicon oxide film with different thickness formed on(111)silicon monocrystal under dry oxygen atmosphere at 1100℃.Compared with their oxidation kinetic curves consisted of three stages,we suggested a mechanism on forming silicon oxide film.According to electron and X-ray diffraction analyses the silicon oxide films consisted of silica with different crystal structure.We also have discussed a stacking fault and a dislocation formed in the Si-Sio_2 interface region simulaneously forming silicon oxide film.

The Influence of Pico-Second Pulse Electron Irradiation on the Electrical-Physical Properties of Silicon Crystals

The studies of the influence of pico-second (4 × 10-13 sec.) pulse electron irradiation with energy of 3.5 MeV on the electrical-physical properties of silicon crystals (n-Si) are presented. It is shown that in spite of relatively low electron irradiation energy, induced radiation defects are of cluster type. The behavior of main carrier mobility depending on temperature and irradiation dose is analyzed and charge carriers’ scattering mechanisms are clarified: on ionized impurities, on point radiation defects with transition into cluster formation. Dose dependencies of electrical conductivity and carrier mobility for samples of various specific resistivities are given.

Numerical analysis and simulation of Czochralski growth processes for large diameter silicon crystals

Numerical analysis and simulation have been an effective means to develop the advanced growth technology and to control the defects type, size and density for silicon crystals of 300 mm and beyond. In the present paper, numerical analysis of the melt flow in the Czochralski （CZ） crystal growth configuration, the three dimensional （3D） modeling, the simulation of melt flow under the magnetic field, the inverse modeling and the time-dependent simulation are reviewed. Finally, comparison of numerical analysis with experimental measurements is discussed.

Irradiation Defects in Silicon Crystal

The application of irradiation in silicon crystal is introduced.The defects caused by irradiation are reviewed and some major ways of studying defects in irradiated silicon are summarized.Furthermore the problems in the investigation of irradiated silicon are discussed as well as its properties.

<i>In-Situ</i>Study of Non-Equilibrium Charge Carriers’ Behavior under Ultra-Short Pulsed Electrons Irradiation in Silicon Crystal

The recombination processes for charge carriers have been studied in n-type silicon crystals which were irradiated by pico-second duration pulse electrons with energy of 3.5 MeV (ultrafast irradiation), and maximum dose of 3.3 × 1013 el/cm2. In-situ measurements were carried out under artificial conditions simulating natural environment (space, semiconductor detectors, etc.). The observed phenomena were investigated experimentally in-situ using a high-speed oscilloscope equipped with a special preamplifier. Following irradiation to particular doses, some peculiarities of the recovery time of the semiconductor equilibrium condition (“characteristic time”), were obtained. Thus, it was found that the value of the “characteristic time” differs by an order of magnitude from the lifetime of the non-equilibrium (minority) charge carrier measured in an ex-situ regime. However, their behavior, as a function of irradiation dose, is similar and decreases with dose increase. Investigations of the dependencies of electro-physical parameters on irradiation dose, using Hall effect measurements, showed that at particular doses the radiation defects thus created, have an insignificant influence on the concentration of the charge carriers, but change their scattering properties appreciably, which affects the time parameters for the recombination of the semiconductor charge carriers. This investigation uses a novel approach to solid-state radiation physics, where in situ measurements were conducted in addition to conventional pre- and post-irradiation.

Quasi-Chemical Reactions in Irradiated Silicon Crystals with Regard to Ultrafast Irradiation

This paper reports results from an investigation of the interaction of displaced Si-self atoms (I) and their vacancies (V), with impurities in crystalline silicon (Si), as induced by micro-second pulse duration irradiation with electrons at different energies: 3.5, 14, 25 and 50 MeV and pico-second pulse duration with energy 3.5 MeV. V-V, I-impurity atom and V-impurity atom interactions are analyzed both experimentally and as modeled using computer simulations. A process of divacancy (V2) accumulation in the dose-dependent linear region is investigated. The effect of impurities on recombination of correlated divacancies, and I-atoms that had become displaced from regular lattice points is estimated by computer modeling of an appropriate diffusion-controlled process. It is concluded that the experimental results can be interpreted quantitatively in terms of a strongly anisotropic quasi-one-dimensional diffusion of displaced I-atoms. In addition, a significant difference is found between the effects of pico-second duration electron beam irradiation, which causes the formation of A-centre (V + Oxygen) clusters, while when the beam is applied on a micro-second timescale, divacancies are created instead, although the electrons have the same energy in both cases.

The Interaction of Impurity Oxygen with Radiation Defects in Silicon Crystal

Present paper describes the investigation of vacancy (V) and interstitial (I) annihilation on oxygen atoms by means of infrared (IR) absorption and Hall-effect measurements of the accumulation of vacancy-oxygen complexes (VO) in Si crystals at high energy electron irradiation. Silicon samples, containing along with isolated oxygen atoms, more complicated oxygen quasi-molecules of SiOn (n = 1, 2, 3…) type, were used. At isochronal and isothermal annealing in the temperature range of 300°C - 350°C, apart from the reaction of vacancy capturing by oxygen atoms with formation of A-centers, more complicated reactions with participation of vacancies and oxygen atoms were observed: A-centers, oxygen containing quasi-molecules. A model is suggested to describe the observed processes that are qualitatively different from those taking place in samples containing completely dissociated oxygen.

Optimization of heat shield for single silicon crystal growth by using numerical simulation

In integrated circuit-grade single silicon Czochralski growth, the position and material of heat shield are main parameters affecting the heat exchange and crystal growth condition. By optimizing the above parameters, we attempted to increase the growth rate and crystal quality. Numerical simulation proved to verify the results before and after optimization. Through analyses of the temperature and microdefect distribution, it is found that the optimized heat shield can further increase the pulling rate and decrease the melt/crystal interface deflection, increase the average velocity of argon flow from ~2 to ~5 m&middots-1, which is in favor of the transportation of SiO, and obtain the low defects concentration crystal and that the average temperature along the melt-free surface is 8 °C higher than before avoiding supercooled melt effectively. © The Nonferrous Metals Society of China and Springer-Verlag Berlin Heidelberg 2012.

Experiment and numerical simulation of melt convection and oxygen distribution in 400-mm Czochralski silicon crystal growth

Single-crystalline silicon materials with large dimensions have been widely used as assemblies in plasma silicon etching machines.However,information about large-diameter low-cost preparation technology has not been sufficiently reported.In this paper,it was focused on the preparation of 400-mm silicon（100） crystal lightly doped with boron from 28-in.hot zones.Resistivity uniformity and oxygen concentration of the silicon crystal were investigated by direct-current（DC） four-point probes method and Fourier transform infrared spectroscopy（FTIR）,respectively.The global heat transfer,melt flow and oxygen distribution were calculated by finite element method（FEM）.The results show that 28-in.hot zones can replace conventional 32 in.ones to grow 400-mm-diameter silicon single crystals.The change in crucible diameter can save energy,reduce cost and improve efficiency.The trend of oxygen distribution obtained in calculations is in good agreement with experimental values.The present model can well predict the 400-mm-diameter silicon crystal growth and is essential for the optimization of furnace design and process condition.

Silicon-Crystal应用在SW26010处理器上的移植与优化

Silicon-Crystal应用运用分子动力学方法对晶体热传导性进行模拟,采用Tersoff势模拟硅晶体的运动轨迹.本文利用神威Athread在神威太湖之光上成功移植了Silicon-Crystal应用,针对SW26010异构众核处理器带来的内存受限问题,提出5种主要优化方式:1)将计算所需参数预取到LDM(Local Data Memory);2)通过DMA(Direct Memory Access)方式对中心原子数据进行传输;3)合理设计软件cache,利用软件cache实现邻居原子数据的读取;4)在从核定制超越函数,避免从核访问超越函数时的离散访存;5)利用寄存器通信实现从核间任务分步流水优化.经过优化,单核组较主核串行取得了12.89倍的加速,较Intel Xeon E5-2620 v4处理器取得了8.7倍的加速.本文还对Silicon-Crystal应用进行了可扩展性测试及分析,实验结果证明Silicon-Crystal应用在神威太湖之光平台上具有良好的可扩展性.

Simulation aided hot zone design for faster growth of CZ silicon mono crystals

Computer simulation was used for optimizing a hot zone for Czochralski （CZ） silicon crystal growth. The heater structure and heat shield material were investigated. With this optimized hot zone, the temperature gradient near the crystal/melt interface increased and the CZ crystal could be grown at a faster rate. It is a great contribution for saving power consumption.

Solid-phase Crystallization of Amorphous Silicon Films by Rapid Thermal Annealing

The morphous silicon films prepared by PECVD at substrate temperatures of 30℃ have been crystallized by rapid thermal annealing method, the budget of time-temperature in the annealing process is 600℃ for 120s, 850℃ for 120s, and 950℃ for 120s. The results indicate the crystallization at 850℃ and 950℃ are better as shown in micro-Raman scattering and scanning electronic microscope.

Preparation and Tribological Investigation of Rare Earth Nanofilm on Single-Crystal Silicon Substrate

The self-assembled silicon substrate. The resultant contact angle meter and atomic method was introduced to successfully obtain film was characterized by means of X-ray rare earth（RE） nanofilm on a single-crystal photoelectron spectroscopy （XPS）, ellipsometer, force microscopy （AFM）. The scratch experiment was performed for interfacial adhesion measurement of the RE film. The friction and wear behavior of RE nanofilm was examined on a DF-PM reciprocating friction and wear tester. The results indicate the RE nanofilm is of low coefficient of friction （COF） and high wear resistance. These desirable characteristics of RE nanofilm together with its nanometer thickness, strong bonding to the substrate and low surface energy make it a promising choice as a solid lubricant film in micro electromechanical system （MEMS） devices.

Numerical study of heat transport and fluid flow during the silicon crystal growth process by the Czochralski method

A global analysis of heat transfer and fluid flow in a real Czochralski single silicon crystal furnace is developed using the FLUENT package.Good agreement was obtained for comparisons of the power and crystal growth speed between the simulation and experimental data,and the effect of the length of the crystal on heat transfer and fluid flow was analyzed.The results showed that T_（max） increases and its location moves downward as the crystal length increases.The flow pattern in the melt does not change until the crystal grows to 900 mm.As the crystal length increases,the flow pattern in the first gas area only changes when the crystal length is less than 700 mm,but the flow pattern in the second area changes throughout the growth process.

STUDY OF PROPERTIES AND TOXICOLOGY OF MEDICAL ORGANIC SILICON GEL CRYSTALS

The authors perpared artifical crystals from silicon elastomer, which ensured medical purity, studied how to improve the light transmittance and the characteristics of moulding (sulfurization). This material has been applied to many clinical cases.

Nickel-disilicide-assisted excimer laser crystallization of amorphous silicon

Polycrystalline silicon （poly-Si） thin film has been prepared by means of nickel-disilicide （NiSi2） assisted excimer laser crystallization （ELC）. The process to prepare a sample includes two steps. One step consists of the formation of NiSi2 precipitates by heat-treating the dehydrogenated amorphous silicon （a-Si） coated with a thin layer of Ni. And the other step consists of the formation of poly-Si grains by means of ELC. According to the test results of scanning electron microscopy （SEM）, another grain growth model named two-interface grain growth has been proposed to contrast with the conventional Ni-metal-induced lateral crystallization （Ni-MILC） model and the ELC model. That is, an additional grain growth interface other than that in conventional ELC is formed, which consists of NiSi2 precipitates and a-Si. The processes for grain growth according to various excimer laser energy densities delivered to the a-Si film have been discussed. It is discovered that grains with needle shape and most of a uniform orientation are formed which grow up with NiSi2 precipitates as seeds. The reason for the formation of such grains which are different from that of Ni-MILC without migration of Ni atoms is not clear. Our model and analysis point out a method to prepare grains with needle shape and mostly of a uniform orientation. If such grains are utilized to make thin-film transistor, its characteristics may be improved.

Material Removal Characteristics of Single-Crystal 4H-SiC Based on Varied-Load Nanoscratch Tests

Single-crystal silicon carbide(SiC)has been widely applied in the military and civil fields because of its excellent physical and chemical properties.However,as is typical in hard-to-machine materials,the good mechanical properties result in surface defects and subsurface damage during precision or ultraprecision machining.In this study,single-and double-varied-load nanoscratch tests were systematically performed on single-crystal 4H-SiC using a nanoindenter system with a Berkovich indenter.The material removal characteristics and cracks under different planes,indenter directions,normal loading rates,and scratch intervals were analyzed using SEM,FIB,and a 3D profilometer,and the mechanisms of material removal and crack propagation were studied.The results showed that the Si-plane of the single-crystal 4H-SiC and edge forward indenter direction are most suitable for material removal and machining.The normal loading rate had little effect on the scratch depth,but a lower loading rate increased the ductile region and critical depth of transition.Additionally,the crack interaction and fluctuation of the depth-distance curves of the second scratch weakened with an increase in the scratch interval,the status of scratches and chips changed,and the comprehensive effects of the propagation and interaction of the three cracks resulted in material fractures and chip accumulation.The calculated and experimental values of the median crack depth also showed good consistency and relativity.Therefore,this study provides an important reference for the high-efficiency and precision machining of single-crystal SiC to ensure high accuracy and a long service life.

Spatially-Resolved Crystallization of Amorphous Silicon Films on the Glass Substrate by Multi-beam Laser Interference

Laser interference induced crystallization of amorphous silicon （a-Si） on the glass substrate was performed using a Q-switched Nd：YAG （yttrium aluminum garnet） laser. White light interferometer （WLI） and atomic force microscope （AFM） were used to characterize the morphology of the structured films, while X-ray diffraction （XRD）, combined with the AFM, was used to analyse the crystalline structure of the film. The experimental results show that the laser energy density above a certain threshold, in the range of 400-500 mJ/cm2,triggers the patterned crystallizations which take the form similar to the laser intensity distribution. For the patterned crystallization under multipulse exposure, a definite polycrystalline structure with individual phases was observed by XRD. The difference in feature form, e.g., deepened craters or heightened lines, is related to the laser energy density relative to the threshold of evaporation of the material.

Growth Conditions of Φ100 mm n <111> FZ Silicon Single Crystal

For large diarneter silicon single crystal, the solid-liquid growth interface is necessary to be a coneaveshape with a certain radius range. If the change of the radius of growth interface is not in this limited range,the growth of DF (dislocation free) sinsle crystal is very difficult. The growth of FZ-Si single crystal was stud-ied. It is found that the growth speed ( 2. 5～2. 7 mm/min) as well as the rotation speed (3. 5 r/min) for theΦ100 mm crystal can be smaller . comparing with the Φ76. 2 mm crystal with the same coil. In order to satisfythe demand of large diameter crystal . the size of coil should be large enough, and the shape should satisfy theneed of the growth interface of crystal. With the increasing of diameter , the heating power , the anode voltageand the strength of electric field within the coil should be increased, and Ar pressure in surrounding circum-stance should also be higher , from 1. 96 × 1 0￣4 Pa to 4. 90 × 10￣4 Pa.According to the above growth factors, three rods of Φ100 mm FZ-Si single crystal were grown success-fully , the weights are 8～10 kg. When the diameter of crystal cone is increased to a limited size, “remeltingarca” will occur in the surface of the crystal , which cause a failure of growing DF crystal , this reason may bethat the recrystalliztion direction has been chansed , as it does.

THEORETICAL STUDIES OF THE NATURE OF THE 2210 cm^(-1) IR ABSORPTION PEAK IN SILICON CRYSTAL CONTAINING HYDROGEN (Ⅲ)——TEMPERATURE EFFECTS OF THE PEAK SHAPEAND THE SYMMETRIC BREAKING OF DEFECT COMPLEX

It is verified that the phonon scattering process and the residual linewidthare the dominant factors of the linewidth of 2210 cm-1 IR absorption peak except the anomalous linewidth at 200 K. By investigating the anomalities of the peak shape and thelinewidth of the peak at 200 K, we put forward a mechanism that the Td symmetry of defect-complex corresponding to the 2210 cm-1 peak can he transferred into the D2d symmetry as temperature rises to above 200 K. The quantitative analysis shows that the V+4H-model is indeed of two states: The Td configuration is stable at temperature lower than 200 K, while the D2d one is stable at temperature higher than 200 K. We can draw the conclusion that the V +4H-model corresponds to the 2210 cm-1 IR absorption peak from the symmetric breaking mechanism, which can quantitatively fit the experimental results.