We present a study on the single event transient （SET） induced by a pulsed laser in different silicon-germanium （SiGe） heterojunction bipolar transistors （HBTs） with the structure of local oxidation of silicon ...We present a study on the single event transient （SET） induced by a pulsed laser in different silicon-germanium （SiGe） heterojunction bipolar transistors （HBTs） with the structure of local oxidation of silicon （LOCOS） and deep trench isolation （DTI）. The experimental results are discussed in detail and it is demonstrated that a SiGe HBT with the structure of LOCOS is more sensitive than the DTI SiGe HBT in the SET. Because of the limitation of the DTI structure, the charge collection of diffusion in the DTI SiGe HBT is less than that of the LOCOS SiGe HBT. The SET sensitive area of the LOCOS SiGe HBT is located in the eollector-substrate （C/S） junction, while the sensitive area of the DTI SiGe HBT is located near to the collector electrodes.展开更多
we investigate the effects of 60^Co γ-ray irradiation on the 130 nm partially-depleted silicon-on-isolator （PDSOI） input/output （I/O） n-MOSFETs. A shallow trench isolation （STI） parasitic transistor is responsi...we investigate the effects of 60^Co γ-ray irradiation on the 130 nm partially-depleted silicon-on-isolator （PDSOI） input/output （I/O） n-MOSFETs. A shallow trench isolation （STI） parasitic transistor is responsible for the observed hump in the back-gate transfer characteristic curve. The STI parasitic transistor, in which the trench oxide acts as the gate oxide, is sensitive to the radiation, and it introduces a new way to characterize the total ionizing dose （TID） responses in the STI oxide. A radiation enhanced drain induced barrier lower （DIBL） effect is observed in the STI parasitic transistor. It is manifested as the drain bias dependence of the radiation-induced off-state leakage and the increase of the DIBL parameter in the STI parasitic transistor after irradiation. Increasing the doping concentration in the whole body region or just near the STI sidewall can increase the threshold voltage of the STI parasitic transistor, and further reduce the radiation-induced off-state leakage. Moreover, we find that the radiation-induced trapped charge in the buried oxide leads to an obvious front-gate threshold voltage shift through the coupling effect. The high doping concentration in the body can effectively suppress the radiation-induced coupling effect.展开更多
In this paper, a complementary metal-oxide semiconductor （CMOS）-compatible silicon substrate optimization technique is proposed to achieve effective isolation. The selective growth of porous silicon is used to effec...In this paper, a complementary metal-oxide semiconductor （CMOS）-compatible silicon substrate optimization technique is proposed to achieve effective isolation. The selective growth of porous silicon is used to effectively suppress the substrate crosstalk. The isolation structures are fabricated in standard CMOS process and then this post-CMOS substrate optimization technique is carried out to greatly improve the performances of crosstalk isolation. Three-dimensional electro-magnetic simulation is implemented to verify the obvious effect of our substrate optimization technique. The morphologies and growth condition of porous silicon fabricated have been investigated in detail. Furthermore, a thick selectively grown porous silicon （SGPS） trench for crosstalk isolation has been formed and about 20dB improvement in substrate isolation is achieved. These results demonstrate that our post-CMOS SGPS technique is very promising for RF IC applications.展开更多
Total ionizing dose responses of different transistor geometries after being irradiated by ^（60）Co γ-rays, in 0.13-μm partially-depleted silicon-on-insulator（PD SOI） technology are investigated. The negative thr...Total ionizing dose responses of different transistor geometries after being irradiated by ^（60）Co γ-rays, in 0.13-μm partially-depleted silicon-on-insulator（PD SOI） technology are investigated. The negative threshold voltage shift in an n-type metal-oxide semiconductor field effect transistor（nMOSFET） is inversely proportional to the channel width due to radiation-induced charges trapped in trench oxide, which is called the radiation-induced narrow channel effect（RINCE）.The analysis based on a charge sharing model and three-dimensional technology computer aided design（TCAD） simulations demonstrate that phenomenon. The radiation-induced leakage currents under different drain biases are also discussed in detail.展开更多
A new analytical model of high voltage silicon on insulator （SOI） thin film devices is proposed, and a formula of silicon critical electric field is derived as a function of silicon film thickness by solving a 2D Po...A new analytical model of high voltage silicon on insulator （SOI） thin film devices is proposed, and a formula of silicon critical electric field is derived as a function of silicon film thickness by solving a 2D Poisson equation from an effective ionization rate, with a threshold energy taken into account for electron multiplying. Unlike a conventional silicon critical electric field that is constant and independent of silicon film thickness, the proposed silicon critical electric field increases sharply with silicon fihn thickness decreasing especially in the case of thin films, and can come to 141V/μm at a film thickness of 0.1 μm which is much larger than the normal value of about 30 V/μm. From the proposed formula of silicon critical electric field, the expressions of dielectric layer electric field and vertical breakdown voltage （VB,V） are obtained. Based on the model, an ultra thin film can be used to enhance dielectric layer electric field and so increase vertical breakdown voltage for SOI devices because of its high silicon critical electric field, and with a dielectric layer thickness of 2 μm the vertical breakdown voltages reach 852 and 300V for the silicon film thicknesses of 0.1 and 5μm, respectively. In addition, a relation between dielectric layer thickness and silicon film thickness is obtained, indicating a minimum vertical breakdown voltage that should be avoided when an SOI device is designed. 2D simulated results and some experimental results are in good agreement with analytical results.展开更多
The dynamic stiffness and the specific damping energy, as well as the vibration response characteristics of a silicone rubber isolator were researched. The results of the vibration test showed that the silicone rubber...The dynamic stiffness and the specific damping energy, as well as the vibration response characteristics of a silicone rubber isolator were researched. The results of the vibration test showed that the silicone rubber isolator was excellent in the performance of vibration control. The dynamic stiffness and the damping characteristics were non-linear. From the comparison between experimental results and simulation analysis, the displacement transmissibility characteristics of the isolator were obtained. As a result, the dynamic characteristics of the isolator could be accurately described by the quadratic type non-linear terms at small amolitude.展开更多
Soy protein isolate(SPI)is a commercial protein with balanced amino acids,while the poor solubility impedes its use in traditional foods.To overcome the problem,the complex coacervation of SPI/Flammulina velutipes pol...Soy protein isolate(SPI)is a commercial protein with balanced amino acids,while the poor solubility impedes its use in traditional foods.To overcome the problem,the complex coacervation of SPI/Flammulina velutipes polysaccharide(FVP)were investigated.Initial results revealed that the suitable amounts of FVP contributed to reducing the turbidity of SPI solution.Under electrostatic interaction,the formation of SPI/FVP coacervates were spontaneous and went through a nucleation and growth process.Low salt concentration(C_(NaCl)=10,50 mmol/L)led to an increase in the critical pH values(pHc,pHφ1)while the critical pH values decreased when C_(NaCl)≥100 mmol/L.The concentration of NaCl ions increased the content ofα-helix.With the increase of FVP,the critical pH values decreased and the content ofβ-sheet increased through electrostatic interaction.At SPI/FVP ratio of 10:1 and 15:1,the complex coacervation of SPI/FVP were saturated,and the coacervates had the same storage modulus value.SPI/FVP coacervates exhibited solid-like properties and presented the strongest storage modulus at C_(NaCl)=50 mmol/L.The optimal pH,SPI/FVP ratio and NaCl concentration of complex coacervation were collected,and the coacervates demonstrated a valuable application potential to protect and deliver bioactives and food ingredients.展开更多
An experiment for preparation of SOI films by using the scanning electron beam to modify the polycrystalline silicon on SiO2 is presented. This method takes on the epitaxial lateral growth of liquid phase with the cry...An experiment for preparation of SOI films by using the scanning electron beam to modify the polycrystalline silicon on SiO2 is presented. This method takes on the epitaxial lateral growth of liquid phase with the crystallon to form monocrystalline silicon films. The effects of the beam power density, scanning velocity, temperature of the substrates and the construction of samples on the quality of the monocrystalline silicon films were discussed. A good experimental result has been obtained, the monocrystalline silicon zone is nearly 200×25μm2.展开更多
To better understand the mass transfer process of moisture in the soy protein isolate-corn starch(SPI-CS)films during preparation and storage process,the drying kinetics model of SPI-CS films with different formation ...To better understand the mass transfer process of moisture in the soy protein isolate-corn starch(SPI-CS)films during preparation and storage process,the drying kinetics model of SPI-CS films with different formation conditions during the drying process and the moisture adsorption characteristics of the SPI-CS films under different humidity conditions were investigated.Within the range of experimental conditions,the moisture migration rule in the SPI-CS films during the drying preparation was combined with the Page model which was expressed as MR=exp(-kt^(n)).It was found that the adsorption equilibrium needed shorter time(about 3 h)when the SPI-CS films existed in the environment with lower humidity(RH<54%).Additionally,the secondorder adsorption kinetic equation was successful to describe the moisture adsorption characteristic of the SPICS films during storage under different humidity conditions.展开更多
基金Supported by the National Natural Science Foundation of China under Grant Nos 61274106
文摘We present a study on the single event transient （SET） induced by a pulsed laser in different silicon-germanium （SiGe） heterojunction bipolar transistors （HBTs） with the structure of local oxidation of silicon （LOCOS） and deep trench isolation （DTI）. The experimental results are discussed in detail and it is demonstrated that a SiGe HBT with the structure of LOCOS is more sensitive than the DTI SiGe HBT in the SET. Because of the limitation of the DTI structure, the charge collection of diffusion in the DTI SiGe HBT is less than that of the LOCOS SiGe HBT. The SET sensitive area of the LOCOS SiGe HBT is located in the eollector-substrate （C/S） junction, while the sensitive area of the DTI SiGe HBT is located near to the collector electrodes.
基金supported by the Opening Project of Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory,China(Grant No.ZHD201205)the National Natural Science Foundation of China(Grant No.61106103)
文摘we investigate the effects of 60^Co γ-ray irradiation on the 130 nm partially-depleted silicon-on-isolator （PDSOI） input/output （I/O） n-MOSFETs. A shallow trench isolation （STI） parasitic transistor is responsible for the observed hump in the back-gate transfer characteristic curve. The STI parasitic transistor, in which the trench oxide acts as the gate oxide, is sensitive to the radiation, and it introduces a new way to characterize the total ionizing dose （TID） responses in the STI oxide. A radiation enhanced drain induced barrier lower （DIBL） effect is observed in the STI parasitic transistor. It is manifested as the drain bias dependence of the radiation-induced off-state leakage and the increase of the DIBL parameter in the STI parasitic transistor after irradiation. Increasing the doping concentration in the whole body region or just near the STI sidewall can increase the threshold voltage of the STI parasitic transistor, and further reduce the radiation-induced off-state leakage. Moreover, we find that the radiation-induced trapped charge in the buried oxide leads to an obvious front-gate threshold voltage shift through the coupling effect. The high doping concentration in the body can effectively suppress the radiation-induced coupling effect.
基金supported by the Major Program of the National Natural Science Foundation of China (Grant No 60625403)the Collaborative Project between Intel Corporation and Peking University
文摘In this paper, a complementary metal-oxide semiconductor （CMOS）-compatible silicon substrate optimization technique is proposed to achieve effective isolation. The selective growth of porous silicon is used to effectively suppress the substrate crosstalk. The isolation structures are fabricated in standard CMOS process and then this post-CMOS substrate optimization technique is carried out to greatly improve the performances of crosstalk isolation. Three-dimensional electro-magnetic simulation is implemented to verify the obvious effect of our substrate optimization technique. The morphologies and growth condition of porous silicon fabricated have been investigated in detail. Furthermore, a thick selectively grown porous silicon （SGPS） trench for crosstalk isolation has been formed and about 20dB improvement in substrate isolation is achieved. These results demonstrate that our post-CMOS SGPS technique is very promising for RF IC applications.
基金Project supported by the Weapon Equipment Pre-Research Foundation of China(Grant No.9140A11020114ZK34147)the Shanghai Municipal Natural Science Foundation,China(Grant No.15ZR1447100)
文摘Total ionizing dose responses of different transistor geometries after being irradiated by ^（60）Co γ-rays, in 0.13-μm partially-depleted silicon-on-insulator（PD SOI） technology are investigated. The negative threshold voltage shift in an n-type metal-oxide semiconductor field effect transistor（nMOSFET） is inversely proportional to the channel width due to radiation-induced charges trapped in trench oxide, which is called the radiation-induced narrow channel effect（RINCE）.The analysis based on a charge sharing model and three-dimensional technology computer aided design（TCAD） simulations demonstrate that phenomenon. The radiation-induced leakage currents under different drain biases are also discussed in detail.
基金Project supported by the National Natural Science Foundation of China (Grant No 60436030)National Laboratory of Analogue Integrated Circuits,China (Grant No 9140C090305060C09)
文摘A new analytical model of high voltage silicon on insulator （SOI） thin film devices is proposed, and a formula of silicon critical electric field is derived as a function of silicon film thickness by solving a 2D Poisson equation from an effective ionization rate, with a threshold energy taken into account for electron multiplying. Unlike a conventional silicon critical electric field that is constant and independent of silicon film thickness, the proposed silicon critical electric field increases sharply with silicon fihn thickness decreasing especially in the case of thin films, and can come to 141V/μm at a film thickness of 0.1 μm which is much larger than the normal value of about 30 V/μm. From the proposed formula of silicon critical electric field, the expressions of dielectric layer electric field and vertical breakdown voltage （VB,V） are obtained. Based on the model, an ultra thin film can be used to enhance dielectric layer electric field and so increase vertical breakdown voltage for SOI devices because of its high silicon critical electric field, and with a dielectric layer thickness of 2 μm the vertical breakdown voltages reach 852 and 300V for the silicon film thicknesses of 0.1 and 5μm, respectively. In addition, a relation between dielectric layer thickness and silicon film thickness is obtained, indicating a minimum vertical breakdown voltage that should be avoided when an SOI device is designed. 2D simulated results and some experimental results are in good agreement with analytical results.
文摘The dynamic stiffness and the specific damping energy, as well as the vibration response characteristics of a silicone rubber isolator were researched. The results of the vibration test showed that the silicone rubber isolator was excellent in the performance of vibration control. The dynamic stiffness and the damping characteristics were non-linear. From the comparison between experimental results and simulation analysis, the displacement transmissibility characteristics of the isolator were obtained. As a result, the dynamic characteristics of the isolator could be accurately described by the quadratic type non-linear terms at small amolitude.
基金supported by the National Key R&D Program of China (2017YFD0400205)Postgraduate Research & Practice Innovation Program of Jiangsu Province (KYCX19_1402)
文摘Soy protein isolate(SPI)is a commercial protein with balanced amino acids,while the poor solubility impedes its use in traditional foods.To overcome the problem,the complex coacervation of SPI/Flammulina velutipes polysaccharide(FVP)were investigated.Initial results revealed that the suitable amounts of FVP contributed to reducing the turbidity of SPI solution.Under electrostatic interaction,the formation of SPI/FVP coacervates were spontaneous and went through a nucleation and growth process.Low salt concentration(C_(NaCl)=10,50 mmol/L)led to an increase in the critical pH values(pHc,pHφ1)while the critical pH values decreased when C_(NaCl)≥100 mmol/L.The concentration of NaCl ions increased the content ofα-helix.With the increase of FVP,the critical pH values decreased and the content ofβ-sheet increased through electrostatic interaction.At SPI/FVP ratio of 10:1 and 15:1,the complex coacervation of SPI/FVP were saturated,and the coacervates had the same storage modulus value.SPI/FVP coacervates exhibited solid-like properties and presented the strongest storage modulus at C_(NaCl)=50 mmol/L.The optimal pH,SPI/FVP ratio and NaCl concentration of complex coacervation were collected,and the coacervates demonstrated a valuable application potential to protect and deliver bioactives and food ingredients.
文摘An experiment for preparation of SOI films by using the scanning electron beam to modify the polycrystalline silicon on SiO2 is presented. This method takes on the epitaxial lateral growth of liquid phase with the crystallon to form monocrystalline silicon films. The effects of the beam power density, scanning velocity, temperature of the substrates and the construction of samples on the quality of the monocrystalline silicon films were discussed. A good experimental result has been obtained, the monocrystalline silicon zone is nearly 200×25μm2.
基金the Grain,Oil and Food Engineering Technology Research Center of the State Grain and Reserves Administration/Key Laboratory of Henan Province,Henan University of Technology(G0202205)the Key Scientific Research Projects of Colleges and Universities of Henan(23A550012)the Science Foundation of Henan University of Technology(2020BS013)。
文摘To better understand the mass transfer process of moisture in the soy protein isolate-corn starch(SPI-CS)films during preparation and storage process,the drying kinetics model of SPI-CS films with different formation conditions during the drying process and the moisture adsorption characteristics of the SPI-CS films under different humidity conditions were investigated.Within the range of experimental conditions,the moisture migration rule in the SPI-CS films during the drying preparation was combined with the Page model which was expressed as MR=exp(-kt^(n)).It was found that the adsorption equilibrium needed shorter time(about 3 h)when the SPI-CS films existed in the environment with lower humidity(RH<54%).Additionally,the secondorder adsorption kinetic equation was successful to describe the moisture adsorption characteristic of the SPICS films during storage under different humidity conditions.
