Silicon PIN photodiode applied to acquire high-frequency sampling XAFS spectra

Experimental techniques based on SR facilities have emerged with the development of synchrotron radiation(SR)sources.Accordingly,detector miniaturization has become significant for the development of SR experimental techniques.In this study,the miniaturization of a detector was achieved by coupling a commercial silicon PIN photodiode(SPPD)into a beamstop,aiming for it not only to acquire X-ray absorption fine structure(XAFS)spectra,but also to protect the subsequent two-dimensional detector from high-brilliance X-ray radiation damage in certain combination techniques.This mini SPPD detector coupled to a beamstop was used as the rear detector in both the conventional sampling scheme and novel high-frequency(HF)sampling scheme to collect the transmission XAFS spectra.Traditional ion chambers were also used to collect the transmission XAFS spectra,which were used as the reference.These XAFS spectra were quantitatively analyzed and compared;the results demonstrated that the XAFS spectra collected by this SPPD in both the conventional sampling scheme and HF sampling scheme are feasible.This study provides a new detector-selection scheme for the acquisition of the quick-scanning XAFS(QXAFS)and HF sampling XAFS spectra.The SPPD detector presented in this study can partially meet the requirements of detector miniaturization.

Silicon-Based Grid Structure Photodiode with Selective UV Enhancement

Aiming at boosting the low ultraviolet (UV)re-sponsivity induced by thenegative impact of the surface 'dead layer' in silicon-based conventional photodiode (CPD), Siphotodiodes with five different structures, including both the novel grid structurephotodiode(GSPD)and CPD, have been manufactured using thermal diffusion process and tested. The results show thatthe UV responsivity around 365 nm of GSPD could be as high as 6 times that of CPD, while the highvisible (VIS) responsivity is sharply suppressed by the employment of grid shaped junction (GSJ) inthe GSPD, which has realized the expectation of selective UV enhancement with prospect forapplication.

Scalability of dark current in silicon PIN photodiode

The mechanism for electrical conduction is investigated by the dark temperature-dependent current–voltage characteristics of Si PIN photodiodes with different photosensitive areas.The characteristic tunneling energy E（00） can be obtained to be 1.40 me V,1.53 me V,1.74 me V,1.87 me V,and 2.01 me V,respectively,for the photodiodes with L = 0.25 mm,0.5 mm,1 mm,1.5 mm,and 2 mm by fitting the ideality factor n versus temperature curves according to the tunneling-enhanced recombination mechanism.The trap-assisted tunneling-enhanced recombination in the i-layer plays an important role in our device,which is consistent with the experimental result that area-dependent leakage current is dominant with the side length larger than 1 mm of the photosensitive area.Our results reveal that the quality of the bulk material plays an important role in the electrical conduction mechanism of the devices with the side length larger than 1 mm of the photosensitive area.

Design of Photoelectric Detection Circuit in Linear Measuring System

The structure,equivalent circuit,noise sources of silicon photodiode are analyzed.In order to improve the measuring linearity,we must choose the silicon photodiode with a large R d,small R s and I 0 and under an operation state of output short-circuit.We must let the operation amplifier work in the current-voltage transfer form.Also we analyzed the effects of the input noise voltage,the input noise current,the input offset voltage,the input offset current of the operation amplifier and the noises of the silicon photodiode on the combined circuit of the operation amplifier with the silicon photodiode.Considering these factors,we can design the detective circuit with high response,sensitivity,stability,linearity and SNR .