This study presents a silicon-based pressure sensor with temperature compensation. The eight piezoresistors were designed on the polycrystalline silicon membrane and constructed by two concentric Wheatstone-bridge cir...This study presents a silicon-based pressure sensor with temperature compensation. The eight piezoresistors were designed on the polycrystalline silicon membrane and constructed by two concentric Wheatstone-bridge circuits to perform two sets of sensors. The sensor in the central circuit measures the membrane deflection caused by the combined effects of pressure and temperature, while the outer one measures only the deflection caused by the working temperature. From this arrangement, it is reliable and accurate to measure the pressure by comparing the output signals from the two concentric Wheatstone-bridge circuits. The optimal positions of the eight piezoresistors were simulated by simulation software ANSYS. The investigated pressure sensor was fabricated by the micro electro-mechanical systems (MEMS) techniques. The measuring performance and an indication of the conventional single Wheatstone-bridge pressure sensor is easily affected under variation of different working temperature and causes a maximum absolute error up to 45.5%, while the double Wheatstone-bridge pressure sensor is able to compensate the error, and reduces it down to 1.13%. The results in this paper demonstrate an effective temperature compensation performance, and have a great performance and stability in the pressure measuring system as well.展开更多
Pressure sensors are the essential equipments in the field of pressure measurement. In this work, we propose a temperature compensation fiber Bragg grating （FBG） pressure sensor based on the plane diaphragm. The pla...Pressure sensors are the essential equipments in the field of pressure measurement. In this work, we propose a temperature compensation fiber Bragg grating （FBG） pressure sensor based on the plane diaphragm. The plane diaphragm and pressure sensitivity FBG （PS FBG） are used as the pressure sensitive components, and the temperature compensation FBG （TC FBG） is used to improve the temperature cross-sensitivity. Mechanical deformation model and deformation characteristics simulation analysis of the diaphragm are presented. The measurement principle and theoretical analysis of the mathematical relationship between the FBG central wavelength shift and pressure of the sensor are introduced. The sensitivity and measure range can be adjusted by utilizing the different materials and sizes of the diaphragm to accommodate different measure environments. The performance experiments are carried out, and the results indicate that the pressure sensitivity of the sensor is 35.7pm/MPa in a range from 0MPa to 50MPa and has good linearity with a linear fitting correlation coefficient of 99.95%. In addition, the sensor has the advantages of low frequency chirp and high stability, which can be used to measure pressure in mining engineering, civil engineering, or other complex environment.展开更多
The principle of miniature isolated solid-state encapsulation technology of high-temperature pressure sensor and the structure of packaging are discussed, including static electricity bonding, stainless steel diaphrag...The principle of miniature isolated solid-state encapsulation technology of high-temperature pressure sensor and the structure of packaging are discussed, including static electricity bonding, stainless steel diaphragm selection and rippled design, laser welding, silicon oil infilling, isolation and other techniques used in sensor packaging, which can affect the performance of the sensor. By adopting stainless steel diaphragm and high-temperature silicon oil as isolation materials, not only the encapsulation of the sensor is as small as 15 mm in diameter and under 1 mA drive, its full range output is 72 mV and zero stability is 0.48% F.S/mon, but also the reliability of the sensor is improved and its application is widely broadened.展开更多
Based on the asymmetric base region transistor, a pressure sensor with temperature compensation circuit is proposed in this paper. The pressure sensitive structure of the proposed sensor is constructed by a C-type sil...Based on the asymmetric base region transistor, a pressure sensor with temperature compensation circuit is proposed in this paper. The pressure sensitive structure of the proposed sensor is constructed by a C-type silicon cup and a Wheatstone bridge with four piezoresistors（R_1, R_2, R_3 and R_4/locating on the edge of a square silicon membrane. The chip was designed and fabricated on a silicon on insulator（SOI） wafer by micro electromechanical system（MEMS） technology and bipolar transistor process. When the supply voltage is 5.0 V, the corresponding temperature coefficient of the sensitivity（TCS） for the sensor before and after temperature compensation are -1862 and -1067 ppm/℃, respectively. Through varying the ratio of the base region resistances r_1 and r_2, the TCS for the sensor with the compensation circuit is -127 ppm/℃. It is possible to use this compensation circuit to improve the temperature characteristics of the pressure sensor.展开更多
随着工业技术的进步,高温高动态压力传感器的应用需求显著增加。提出一种集成专用补偿电路的高动态硅压阻式微电子机械系统(Micro-Electro-Mechanical Systems,MEMS)压力传感器,进行压力敏感芯片的结构设计和加工工艺设计,并对压力传感...随着工业技术的进步,高温高动态压力传感器的应用需求显著增加。提出一种集成专用补偿电路的高动态硅压阻式微电子机械系统(Micro-Electro-Mechanical Systems,MEMS)压力传感器,进行压力敏感芯片的结构设计和加工工艺设计,并对压力传感器进行封装和温度补偿电路设计。多层绝缘体上硅(Silicon On Insulator,SOI)材料能够使传感器在高温环境下正常工作。无引线的封装方式可有效提升传感器的频响性能。传感器后端集成了桥阻式专用集成电路(Application Specific Integrated Circuits,ASIC),能够显著减小传感器的体积,同时提升传感器整体性能。该MEMS传感器通过自动压力测试系统进行性能试验,结果表明MEMS压力传感器经过补偿后能够实现较高的线性度、稳定的零点输出特性以及理想的动态输出特性。展开更多
文摘This study presents a silicon-based pressure sensor with temperature compensation. The eight piezoresistors were designed on the polycrystalline silicon membrane and constructed by two concentric Wheatstone-bridge circuits to perform two sets of sensors. The sensor in the central circuit measures the membrane deflection caused by the combined effects of pressure and temperature, while the outer one measures only the deflection caused by the working temperature. From this arrangement, it is reliable and accurate to measure the pressure by comparing the output signals from the two concentric Wheatstone-bridge circuits. The optimal positions of the eight piezoresistors were simulated by simulation software ANSYS. The investigated pressure sensor was fabricated by the micro electro-mechanical systems (MEMS) techniques. The measuring performance and an indication of the conventional single Wheatstone-bridge pressure sensor is easily affected under variation of different working temperature and causes a maximum absolute error up to 45.5%, while the double Wheatstone-bridge pressure sensor is able to compensate the error, and reduces it down to 1.13%. The results in this paper demonstrate an effective temperature compensation performance, and have a great performance and stability in the pressure measuring system as well.
文摘Pressure sensors are the essential equipments in the field of pressure measurement. In this work, we propose a temperature compensation fiber Bragg grating （FBG） pressure sensor based on the plane diaphragm. The plane diaphragm and pressure sensitivity FBG （PS FBG） are used as the pressure sensitive components, and the temperature compensation FBG （TC FBG） is used to improve the temperature cross-sensitivity. Mechanical deformation model and deformation characteristics simulation analysis of the diaphragm are presented. The measurement principle and theoretical analysis of the mathematical relationship between the FBG central wavelength shift and pressure of the sensor are introduced. The sensitivity and measure range can be adjusted by utilizing the different materials and sizes of the diaphragm to accommodate different measure environments. The performance experiments are carried out, and the results indicate that the pressure sensitivity of the sensor is 35.7pm/MPa in a range from 0MPa to 50MPa and has good linearity with a linear fitting correlation coefficient of 99.95%. In addition, the sensor has the advantages of low frequency chirp and high stability, which can be used to measure pressure in mining engineering, civil engineering, or other complex environment.
文摘The principle of miniature isolated solid-state encapsulation technology of high-temperature pressure sensor and the structure of packaging are discussed, including static electricity bonding, stainless steel diaphragm selection and rippled design, laser welding, silicon oil infilling, isolation and other techniques used in sensor packaging, which can affect the performance of the sensor. By adopting stainless steel diaphragm and high-temperature silicon oil as isolation materials, not only the encapsulation of the sensor is as small as 15 mm in diameter and under 1 mA drive, its full range output is 72 mV and zero stability is 0.48% F.S/mon, but also the reliability of the sensor is improved and its application is widely broadened.
基金supported by the National Natural Science Foundation of China(No.61471159)the Natural Science Foundation of Heilongjiang Province(No.F201433)+1 种基金the University Nursing Program for Young Scholars with Creative Talents in Heilongjiang Province(No.2015018)the Special Funds for Science and Technology Innovation Talents of Harbin in China(No.2016RAXXJ016)
文摘Based on the asymmetric base region transistor, a pressure sensor with temperature compensation circuit is proposed in this paper. The pressure sensitive structure of the proposed sensor is constructed by a C-type silicon cup and a Wheatstone bridge with four piezoresistors（R_1, R_2, R_3 and R_4/locating on the edge of a square silicon membrane. The chip was designed and fabricated on a silicon on insulator（SOI） wafer by micro electromechanical system（MEMS） technology and bipolar transistor process. When the supply voltage is 5.0 V, the corresponding temperature coefficient of the sensitivity（TCS） for the sensor before and after temperature compensation are -1862 and -1067 ppm/℃, respectively. Through varying the ratio of the base region resistances r_1 and r_2, the TCS for the sensor with the compensation circuit is -127 ppm/℃. It is possible to use this compensation circuit to improve the temperature characteristics of the pressure sensor.
文摘随着工业技术的进步,高温高动态压力传感器的应用需求显著增加。提出一种集成专用补偿电路的高动态硅压阻式微电子机械系统(Micro-Electro-Mechanical Systems,MEMS)压力传感器,进行压力敏感芯片的结构设计和加工工艺设计,并对压力传感器进行封装和温度补偿电路设计。多层绝缘体上硅(Silicon On Insulator,SOI)材料能够使传感器在高温环境下正常工作。无引线的封装方式可有效提升传感器的频响性能。传感器后端集成了桥阻式专用集成电路(Application Specific Integrated Circuits,ASIC),能够显著减小传感器的体积,同时提升传感器整体性能。该MEMS传感器通过自动压力测试系统进行性能试验,结果表明MEMS压力传感器经过补偿后能够实现较高的线性度、稳定的零点输出特性以及理想的动态输出特性。
