Steam oxidation resistance of Si3N4 and Si2N2O as well as SiAlON bonded SiC refractories at 900℃was tested according to ASTM-C863.Phase composition and microstructure before and after oxidation were analyzed by XRD a...Steam oxidation resistance of Si3N4 and Si2N2O as well as SiAlON bonded SiC refractories at 900℃was tested according to ASTM-C863.Phase composition and microstructure before and after oxidation were analyzed by XRD and SEM.The results show that Si3N4 and Si2N2O bonded SiC refractory presents better steam oxidation resistance than SiAlON bonded SiC.For Si3N4 and Si2N2O bonded SiC,the oxidation speed is higher with more pronounced volume expansion in the early 100 h;afterwards,the volume expansion slows down gradually and starts to level off after 300 h.It is considered that the high silica glass phase formed during the oxidation covers Si3N4 and Si2N2O,and SiC as a protective layer and fills the open pores.But for SiAlON bonded SiC,the volume expands gradually and constantly with the increasing oxidation duration even after 500 h,due to the continuous formation of mullite transformed from oxidation products and Al2O3 in SiAlON.展开更多
Silicon carbide castables of different SiC contents(86%and 71%,by mass)were prepared using white fused corundum,silicon carbide particles and fines,activated alumina powder,silica fume and pure calcium aluminate cemen...Silicon carbide castables of different SiC contents(86%and 71%,by mass)were prepared using white fused corundum,silicon carbide particles and fines,activated alumina powder,silica fume and pure calcium aluminate cement as main starting materials,heat treating at 1000℃ for 3 h,and oxidizing in steam atmosphere at 1000℃ for different durations(100,200,300,400 and 500 h).The mass and volume before and after oxidation,the bulk density,the apparent porosity and the cold compressive strength were tested.The phase composition and the microstructure before and after oxidation were analyzed by XRD and SEM.The results indicate that:(1)within 300 h of oxidation duration,silicon carbide shows an increasing oxidation rate;however,the oxidation rate is low during 300-500 h of oxidation duration;2)the oxidation rate of the specimen with 71%SiC is slightly higher than the one with 86%SiC;3)with the increasing oxidation degree of silicon carbide,the apparent porosity of the specimens tends to increase,followed by the declining bulk density and cold compressive strength.展开更多
The oxidation tests of different SiC refractories including Si3N4-SiC bricks,Si3N4-Si2N2O-SiC bricks from China(SNO-1),Si3N4-Si2N2O-SiC bricks from overseas(SNO-2),SiAlON-SiC bricks,oxides bonded SiC bricks,self-bonde...The oxidation tests of different SiC refractories including Si3N4-SiC bricks,Si3N4-Si2N2O-SiC bricks from China(SNO-1),Si3N4-Si2N2O-SiC bricks from overseas(SNO-2),SiAlON-SiC bricks,oxides bonded SiC bricks,self-bonded SiC bricks as well as SiC castables were carried out in the steam atmosphere(1 000 ℃,32 kg·m-3·h-1)for different durations(100,200,300,400 and 500 h).The mass,the volume,the bulk density and the apparent porosity before and after the oxidation were tested.The XRD and SEM analyses were conducted.The results indicate that:(1)under the steam atmosphere condition(1 000 ℃,32 kg·m-3·h-1),as the oxidation time increases from 0 to 500 h,the volume and the mass of the silicon carbide refractories increase,while the bulk density decreases;in terms of the apparent porosity,oxides bonded SiC bricks and SiC castables present an increasing trend,Si3N4-SiC bricks,SiAlON-SiC bricks and self-bonded SiC bricks present an increasing trend first and then a decreasing trend,and Si3N4-Si2N2O-SiC bricks present a decreasing trend or a trend of decreasing first and then increasing;(2)as for Si3N4-Si2N2O-SiC bricks,SNO-1 and SNO-2 have basically the same chemical and phase composition,SNO-2 has the lower mass change rate than SNO-1 during oxidation from 200-500 h,which indicates that SNO-2 has the better steam oxidation resistance than SNO-1.展开更多
High temperature oxidation behavior of two kinds of nitride bonded SiC based refractories wtls bwestigated at I 100-1 .500℃ by means of X-ray di[fractometer, scanning electronic microscopy and thermogravimetry. The r...High temperature oxidation behavior of two kinds of nitride bonded SiC based refractories wtls bwestigated at I 100-1 .500℃ by means of X-ray di[fractometer, scanning electronic microscopy and thermogravimetry. The results show that ： （1） with the temperature im＇reasing, the oxidation mass increment rote of the specimen increases.first and then. decreases, and oxidation passi＇va tion occttrs; （2） the oxidation resistance of SiAION bonded SiC refractories is superior to that of Si3N4 botlded SiC refractories ; （3） high temperature oxidtttion resuits itt the increase of compressive strength at room temperature of SiC based refractoviesiaes comlmred with specimen before oxidatiotl; the compressive strength of SIMON bonded SiC specimens oxidized at high temperatures decreases with the increase of the temperature as a result of formation amt burst of surfhce bubble, while the decrease of compressive strength of Sign4 bonded SiC specimens oxidized at high temperatures is owitng to the bwrease of the consistency of netlike crack assoeiated with cristobalite transfornuttion during cooling.展开更多
The steam oxidation of Si3N4-bonded SiC was determined at 1000℃for 50,100,150,200,250 and 300 h,respectively,according to ASTM C863-2000.The evolution of the phase composition and the microstructure as well as their ...The steam oxidation of Si3N4-bonded SiC was determined at 1000℃for 50,100,150,200,250 and 300 h,respectively,according to ASTM C863-2000.The evolution of the phase composition and the microstructure as well as their relationship was investigated by XRD and SEM.The results show that the oxidation rate of Si3N4-bonded SiC is periodic.The presence of nitrogen element can impede the crystallization of SiO2 glass;the local enrichment of CaO impurities is unfavorable for the existence of fibrous SiO2.SiO2 mainly exists as cristobalite when the CaO/SiO2 ratio reaches a suitable level,but gradually transforms to quartz along with the oxidation time when the SiO2 content increases,or the CaO/SiO2 ratio decreases,due to the insufficient mineralization of CaO.The crystallization of SiO2 glass,especially the formation of quartz is the key factor leading to the volume expansion and structural stress.When the cracks extend and reach the surface,the degradation of the material accelerates.展开更多
文摘Steam oxidation resistance of Si3N4 and Si2N2O as well as SiAlON bonded SiC refractories at 900℃was tested according to ASTM-C863.Phase composition and microstructure before and after oxidation were analyzed by XRD and SEM.The results show that Si3N4 and Si2N2O bonded SiC refractory presents better steam oxidation resistance than SiAlON bonded SiC.For Si3N4 and Si2N2O bonded SiC,the oxidation speed is higher with more pronounced volume expansion in the early 100 h;afterwards,the volume expansion slows down gradually and starts to level off after 300 h.It is considered that the high silica glass phase formed during the oxidation covers Si3N4 and Si2N2O,and SiC as a protective layer and fills the open pores.But for SiAlON bonded SiC,the volume expands gradually and constantly with the increasing oxidation duration even after 500 h,due to the continuous formation of mullite transformed from oxidation products and Al2O3 in SiAlON.
文摘Silicon carbide castables of different SiC contents(86%and 71%,by mass)were prepared using white fused corundum,silicon carbide particles and fines,activated alumina powder,silica fume and pure calcium aluminate cement as main starting materials,heat treating at 1000℃ for 3 h,and oxidizing in steam atmosphere at 1000℃ for different durations(100,200,300,400 and 500 h).The mass and volume before and after oxidation,the bulk density,the apparent porosity and the cold compressive strength were tested.The phase composition and the microstructure before and after oxidation were analyzed by XRD and SEM.The results indicate that:(1)within 300 h of oxidation duration,silicon carbide shows an increasing oxidation rate;however,the oxidation rate is low during 300-500 h of oxidation duration;2)the oxidation rate of the specimen with 71%SiC is slightly higher than the one with 86%SiC;3)with the increasing oxidation degree of silicon carbide,the apparent porosity of the specimens tends to increase,followed by the declining bulk density and cold compressive strength.
基金supported by Provincial Science&Technology Program(No.201200211500),Henan,China.
文摘The oxidation tests of different SiC refractories including Si3N4-SiC bricks,Si3N4-Si2N2O-SiC bricks from China(SNO-1),Si3N4-Si2N2O-SiC bricks from overseas(SNO-2),SiAlON-SiC bricks,oxides bonded SiC bricks,self-bonded SiC bricks as well as SiC castables were carried out in the steam atmosphere(1 000 ℃,32 kg·m-3·h-1)for different durations(100,200,300,400 and 500 h).The mass,the volume,the bulk density and the apparent porosity before and after the oxidation were tested.The XRD and SEM analyses were conducted.The results indicate that:(1)under the steam atmosphere condition(1 000 ℃,32 kg·m-3·h-1),as the oxidation time increases from 0 to 500 h,the volume and the mass of the silicon carbide refractories increase,while the bulk density decreases;in terms of the apparent porosity,oxides bonded SiC bricks and SiC castables present an increasing trend,Si3N4-SiC bricks,SiAlON-SiC bricks and self-bonded SiC bricks present an increasing trend first and then a decreasing trend,and Si3N4-Si2N2O-SiC bricks present a decreasing trend or a trend of decreasing first and then increasing;(2)as for Si3N4-Si2N2O-SiC bricks,SNO-1 and SNO-2 have basically the same chemical and phase composition,SNO-2 has the lower mass change rate than SNO-1 during oxidation from 200-500 h,which indicates that SNO-2 has the better steam oxidation resistance than SNO-1.
文摘High temperature oxidation behavior of two kinds of nitride bonded SiC based refractories wtls bwestigated at I 100-1 .500℃ by means of X-ray di[fractometer, scanning electronic microscopy and thermogravimetry. The results show that ： （1） with the temperature im＇reasing, the oxidation mass increment rote of the specimen increases.first and then. decreases, and oxidation passi＇va tion occttrs; （2） the oxidation resistance of SiAION bonded SiC refractories is superior to that of Si3N4 botlded SiC refractories ; （3） high temperature oxidtttion resuits itt the increase of compressive strength at room temperature of SiC based refractoviesiaes comlmred with specimen before oxidatiotl; the compressive strength of SIMON bonded SiC specimens oxidized at high temperatures decreases with the increase of the temperature as a result of formation amt burst of surfhce bubble, while the decrease of compressive strength of Sign4 bonded SiC specimens oxidized at high temperatures is owitng to the bwrease of the consistency of netlike crack assoeiated with cristobalite transfornuttion during cooling.
基金The project is supported by Municipal Science&Technology Program(No.1901001A),Luoyang,China.
文摘The steam oxidation of Si3N4-bonded SiC was determined at 1000℃for 50,100,150,200,250 and 300 h,respectively,according to ASTM C863-2000.The evolution of the phase composition and the microstructure as well as their relationship was investigated by XRD and SEM.The results show that the oxidation rate of Si3N4-bonded SiC is periodic.The presence of nitrogen element can impede the crystallization of SiO2 glass;the local enrichment of CaO impurities is unfavorable for the existence of fibrous SiO2.SiO2 mainly exists as cristobalite when the CaO/SiO2 ratio reaches a suitable level,but gradually transforms to quartz along with the oxidation time when the SiO2 content increases,or the CaO/SiO2 ratio decreases,due to the insufficient mineralization of CaO.The crystallization of SiO2 glass,especially the formation of quartz is the key factor leading to the volume expansion and structural stress.When the cracks extend and reach the surface,the degradation of the material accelerates.
