Synthesis of SiC Whiskers from Silicon Nitride in Argon Atmosphere

SiC whiskers were synthesized by carbothermal reduction of silicon nitride, α-Si3N4 and β-Si3N4 powders were used as silicon sources, and graphite, active carbon and black carbon as carbon sources, as well as boron oxide as catalyst. The synthesized SiC whiskers were characterized by XRD and SEM. The results showed that the synthesizing temperature should be above 1716 K; the decomposition of Si3N4 was the limited step in the synthesis of SiC whiskers; and catalyst not only offered the liquid condition, but also restricted the growth of SiC whiskers along one dimension. LS mechanism seems to explain well the growth of SiC whiskers.

Modified silicon carbide whisker reinforced polybenzimidazole used for high temperature proton exchange membrane

Polybenzimidazole containing ether bond（OPBI） was reinforced with silicon carbide whisker（m Si C） modified by 3-aminopropyltriethoxysilane（KH550）, and then doped with phosphoric acid（PA） to obtain OPBI/m Si C/PA membranes. These OPBI/m Si C/PA membranes have excellent mechanical strength and oxidative stability and can be used for high temperature proton exchange membrane（HT-PEM）. The tensile strength of OPBI/m Si C/PA membranes ranges from 27.3 to 36.8 MPa, and it increases at first and then decreases with the increase of m Si C content. The high m Si C content and PA doping level contribute to improving the proton conductivity of membranes. The proton conductivity of PBI/m Si C-10/PA membrane is 27.1 m S cm-1 at 170℃ without humidity, with an increase of 55.7% compared with that of OPBI/PA membrane. These excellent properties make OPBI/m Si C/PA membranes promising membrane materials for HT-PEM applications.

In-situ Formation of SiC Whiskers by Ni-catalyzed Silicon-modified Pitch and Its Mechanism

The pitch was dried and modified with 1 mass%nickel nitrate and 10 mass% Si powder successively,then carbonized in Ar atmosphere at 900,1 000,1 100,1 200,1 300,and 1 400 ℃,respectively. Effects of carbonization temperature on phase composition and microstructure of Ni-catalyzed silicon modified pitch were studied by XRD,FESEM and EDS,and the growth mechanism of Si C whiskers was discussed as well. The results show that Si C whiskers form in the carbonized products of modified pitch processed in Ar atmosphere at 1 000,1 100,1 200,1 300,or 1 400 ℃; its length is about1- 6 μm; its growth mode is apical growth,and its growth mechanism accords with V- L- S mechanism.

Effect of Carbon Source on Crystal Morphology of SiC in-situ Formed in AI_2O_3-Si-C Matrix

Three kinds of Al2O3- Si- C matrix specimens were prepared using tabular corundum powder and Si powder as starting materials,ultrafine flake graphite,nano carbon black,and carbon nanotubes as carbon sources,respectively,to research the effect of micro or nano carbon materials on structure and morphology of formed Si C crystals. The specimens were fired at 1 000,1 200 and 1 400℃ for 3 h in carbon-embedded condition,respectively.The phase composition was studied by XRD and the crystal morphology of Si C was investigated by FESEM. The results show that：（ 1） the amount of Si C increases with the firing temperature rising;（ 2） the in-situ reaction mechanism and the formed Si C crystal morphology vary with carbon source： carbon nanotubes are generally converted into Si C whiskers by carbon nanotubes-confined reaction; Si and nano carbon black react to nucleate quickly,and the nucleated Si C crystals grow evenly in all directions forming Si C particles; Si C whiskers are produced from edge to internal of ultrafine flake graphite.

Synthesis of Organic Modified SiC_w/PVDF Composite Membrane and Its Dielectric Properties under Low Temperature

Cetyltrimethylammonium bromide(CTAB) was incorporated into silicon carbide whiskers(SiCw) to improve their hydrophobicity. The solution casting method was employed to develop composite membranes of polyvinylidene fluoride(CTAB-SiCw/PVDF) with different feed ratios. FT-IR spectroscopic studies proved that CTAB was successfully incorporated into the SiCw. SiCw phase structure was maintained after modification by CTAB according to XRD results. SEM studies indicated that the surface became smoother with CTAB dispersal in the PVDF membrane. The dielectric properties of the composite membranes containing various amounts of CTAB-SiCw were measured at low temperature. It was found that the dielectric constant of the composite membranes with 13.0 wt% whiskers reached a maximum value of 25 at low frequency, and decreased to nine at high frequency(from 500 Hz to 1 MHz) at 0 ℃. The dielectric loss of each composite membrane increased with increasing temperature and reached a maximum value. The value shifted with corresponding frequency increases. In addition, the dielectric loss reached a maximum value of 0.2 when 16.7 wt% of CTAB-SiCw was fed at each frequency(from-30 ℃ to 10 ℃). At room temperature, the dielectric constant could be maintained at 42 and the loss factor decreased to 0.8 at 100 Hz when 13.0 wt% of CTABSiCw was incorporated. Additionally, TGA experiments indicated that the decomposition temperature of a PVDF membrane was increased by 10 ℃ and its heat resistance was improved by adding 13.0 wt% of CTAB-SiCw. This PVDF composite membrane has potential for use as an insulator and capacitor.

Investigation on Mechanical Properties and Microstructure of Hydroxyapatite-SiC_w Composite Bioceramics

Hydroxyapatite-SiCw composite micropowder was synthesized using in-situ composite method, and hydroxyapatite- SiCw composite bioceramics with different content of SiCw were produced by hot pressing sintering method. The microstructures of the materials were analyzed by SEM, and the relative density, bending strength and fracture toughness of the materials were tested. The results show that the mechanical properties of composite material are best when the whisker content is 20- 23.7% . The mechanical properties of the material are the best when the tensile stress acted on the composite material is parallel with the hot pressing plane, and they are the worst when the tensile stress acted on the composite material is normal to the hot pressing plane.

Preparation and Properties of Self-Reinforced Si_3N_4-Based Composites

The growth conditions and mechanism of SiC whiskers synthesized by carbothermal reductionof silica are described in the present paper. This method was used for preparing SiC whiskers which dis-tributed homogeneously in the matrix of Si_3N_4 powders, and then Si_3N_4 composites with SiC reinforcedwhisker were prepared (Since no additional whiskers are needed ,this kind of materials may be referred to as“self-reinforced ceramicbased composites”). These composites have good mechanical properties at 15 vol. %SiC_W : K_(1C)= 8. 0 MPa· m￣(1/2);σ_(b,RT)=649 MPa;σ_(b,1300℃)=621 MPa (after oxidation at 1300 ℃ for 100h inair). The microstructural characteristics of SiC/ Si_3N_4 composrtes are: SiC whiskers are homogeneously dis-tributed between Si_3N_4 grains,in which there are nanometer-sized SiC particals trapped,and only a few ofthem are located at Si_3N_4 grain boundaries.

INVESTIGATION OF MULTIPHASE-REINFORCED Si_3N_4 COMPOSITE MATERIAL

By means of whisker reinforce and paricle dispersion, the routes of property improvement on Si3N4 ceramic material have been studied. The medhaniacl properties of Siw/Si3N4 and Siw/Si3N4TiC material was compared, which proved that multiphase reinforce had overlap effect. Microstructure of the rnaterial was investigated by means of SEM and the mechanisms of SiC. and TiCP reinforces had been disussed.