Effect of SiO 2 content and sintering process on the composition and properties of Pure Carbon Reaction Bonded Silicon Carbide (PCRBSC) ceramics prepared with C-SiO 2 green body by infiltrating silicon was presented...Effect of SiO 2 content and sintering process on the composition and properties of Pure Carbon Reaction Bonded Silicon Carbide (PCRBSC) ceramics prepared with C-SiO 2 green body by infiltrating silicon was presented.The infiltrating mechanism of C-SiO 2 preform was also explored.The experimental results indicate that the shaping pressure increases with the addition of SiO 2 to the preform,and the pore size of the body turned finer and distributed in a narrower range,which is beneficial to decreasing the residual silicon content in the sintered materials and to avoiding shock off,thus increasing the conversion rate of SiC.SiO 2 was deoxidized by carbon at a high temperature and the gaseous SiO and CO produced are the main reason to the crack of the body at an elevated temperature.If the green body is deposited at 1800℃ in vacuum before infiltration crack will not be produced in the preform and fully dense RBSC can be obtained.The ultimate material has the following properties:a density of 3.05-3.12g/cm3,a strength of 580±32MPa and a hardness of (HRA)91-92.3.展开更多
Silicon carbide (SiC) ceramics is a good structural ceramics material, which have a lot of excellent properties such as superior high-temperature strength up to a temperature of 1 350 ℃, chemical stability, good resi...Silicon carbide (SiC) ceramics is a good structural ceramics material, which have a lot of excellent properties such as superior high-temperature strength up to a temperature of 1 350 ℃, chemical stability, good resistance to thermal shock and high abrasion resistance. The silicon carbide ceramics material has so far been used widely for manufacturing various components such as heat exchangers, rolls, rockets combustion chamber. Sintering of ceramics structural parts have many technological method, the reaction-bonded is one of important sintering technology of ceramics structural parts. The preparation of reaction-bonded silicon carbide (RBSC) is based on a reaction sintering process, whereby a compacted body of α-SiC and carbon (graphite) powders is heated in contact with liquid silicon or gas silicon, which impregnates the body, converting the carbon (graphite) to β-SiC which bonds the original alpha grain. This process is characterized by low temperature and a short time sintering, and being appropriate to the preparation of large size and complex-shaped components, and so on. Besides, during compacting process of reaction sintering, it can maintain a stable dimension of ceramics parts. Therefore, the method of reaction-bonded silicon carbide ceramics has been identified as a technology suitable for producing complicated and highly exact dimensions’ ceramics parts. In this paper, the method of reaction-bonded silicon carbide was applied to the manufacturing of a complex-shaped spacecraft combustion chamber of SiC ceramics. SiC and carbon powder of 4～30 μm were chosen as the raw materials, green compacts containing appropriate wt.% carbon were formed using the mold press method, sintering was performed in a graphite electric furnace under an argon atmosphere. It was introduced in detail that the technological parameters and technological flow of reaction sintering silicon carbide ceramics. At the same time, physical and mechanical experiments such as bending strength, coefficient of thermal expansion, coefficient of thermal conductivity, gastight property, heat resisting property etc. have been carried out. The results demonstrated that spacecraft combustion chamber made from reaction sintering of silicon carbide ceramics is feasible and the results of experiment is satisfactory. The strength of high-temperature structural parts made by reaction sintered SiC varied with silicon content; Under the this article testing condition, the optimum silicon content is 10.5% for the part investigated. The method of reaction sintered SiC ceramics is suitable for manufacturing of complicated spacecraft parts with a working temperature of 1 500 ℃.展开更多
The fundamental experiments were performed to establish the operational conditions required to prepare the microcapsules containing paraffin wax as a phase change material (PCM) and SiC powder with the interfacial pol...The fundamental experiments were performed to establish the operational conditions required to prepare the microcapsules containing paraffin wax as a phase change material (PCM) and SiC powder with the interfacial polycondensation reaction. It was investigated how SiC powder affected a few characteristics of microcapsules such as the diameters of microcapsules, latent heat storage density, thermal responsibility and supercooling. In the experiment, the concentration of oil soluble surfactant, the revolution speed of impeller for preparing the (O/W) emulsion and the added weight of SiC powder were changed stepwise. The microcapsules containing PCM in which SiC powder was dispersed could be prepared well and characterized. The diameters of microcapsules increased by containing SiC powder and the content of SiC powder could be increased by performing surface modification of SiC powder. Latent heat storage density decreased with the content of SiC powder. Supercooling of PCM and thermal responsibility could be improved to some degree by containing SiC powder.展开更多
The thermal expansion behaviors of commercially-available SiC whisker reinforced pure aluminum composites subjected to different heat treatments were studied. The results indicated that the thermal expansion behaviors...The thermal expansion behaviors of commercially-available SiC whisker reinforced pure aluminum composites subjected to different heat treatments were studied. The results indicated that the thermal expansion behaviors were greatly affected by heat treatment. To explain the results, the microstructures and thermal mismatch stresses in the matrix of the composite were examined by the transmission electron microscope and X-ray diffraction, respectively. The results show that the dislocation density and thermal mismatch stresses in the matrix of the composites water-quenched from 600°C are much higher than those of the composite slowly cooled from 600°C. The analysis suggests that the coefficients of thermal expansion (CTE) are closely related to the change of thermal mismatch stresses and the yield strength of the matrix of the composite. The comparison of the coefficients of thermal expansion between experiments and calculations suggests that the temperature behaviors of CTE of SiC/Al composite agree better with those of Kerner's model within lower temperature range.展开更多
In this study, the effect of heat treatment on the room temperature strength of W-core Si C fiber produced by chemical vapor deposition（CVD） was investigated. Thermal exposure in the temperature range of 900–1000？...In this study, the effect of heat treatment on the room temperature strength of W-core Si C fiber produced by chemical vapor deposition（CVD） was investigated. Thermal exposure in the temperature range of 900–1000？C decreases the strength of the Si C fiber. Fracture morphology analysis indicates that failure initiations predominantly take place at the W-core/Si C interface. A reaction layer that formed at the W-core/Si C interface during thermal exposure degraded the fiber strength and an empirical linear relationship of strength vs thickness of the reaction layer can be obtained. The kinetics of the growth of the W-core/Si C reaction layer were determined.展开更多
Petroleum coke, graphite, gas carbon and lower sulfur carbon black were used to prepare reaction-bonded silicon carbide. The influences of different carbon containing materials on properties of carbonaceous precursors...Petroleum coke, graphite, gas carbon and lower sulfur carbon black were used to prepare reaction-bonded silicon carbide. The influences of different carbon containing materials on properties of carbonaceous precursors, sintering process, and microstructure of the prepared SiC were researched. The results show that ： （ 1 ） With the density of carbon containing materials increasing, the porosity of carbonaceous precursors decreases and the infiltrating process of liquid silicon is more difficult. （2） The reaction between carbon containing materials and liquid silicon, the volume effect is more obvious with the density of carbon containing materials increasing. （3） As the carbon containing materials density decreasing, residual carbon in reaction bonded SiC also decreases.展开更多
SiC films were prepared by modified heating polystyrene/silica bilayer method on Si（111） substrate in normal pressure flowing Ar ambient at 1300℃ . The films were investigated by Fourier transform infrared absorpti...SiC films were prepared by modified heating polystyrene/silica bilayer method on Si（111） substrate in normal pressure flowing Ar ambient at 1300℃ . The films were investigated by Fourier transform infrared absorption, X-ray diffraction, and scanning electron microscopy measurements. The chemical thermodynamics process is discussed. The whole reaction can be separated into four steps. The carburizing of SiO is the key step of whole reaction. The main reaction-sequence is figured out based on Gibbs free energy and equilibrium constant. Flowing Ar is necessary to continue the progress of whole reaction by means of carrying out accumulating gaseous resultants. The film is very useful for application in a variety of MOS-based devices for its silica/SiC/Si（111） structure, in which the silica layer can be removed thoroughly by the standard RCA cleaning process.展开更多
文摘Effect of SiO 2 content and sintering process on the composition and properties of Pure Carbon Reaction Bonded Silicon Carbide (PCRBSC) ceramics prepared with C-SiO 2 green body by infiltrating silicon was presented.The infiltrating mechanism of C-SiO 2 preform was also explored.The experimental results indicate that the shaping pressure increases with the addition of SiO 2 to the preform,and the pore size of the body turned finer and distributed in a narrower range,which is beneficial to decreasing the residual silicon content in the sintered materials and to avoiding shock off,thus increasing the conversion rate of SiC.SiO 2 was deoxidized by carbon at a high temperature and the gaseous SiO and CO produced are the main reason to the crack of the body at an elevated temperature.If the green body is deposited at 1800℃ in vacuum before infiltration crack will not be produced in the preform and fully dense RBSC can be obtained.The ultimate material has the following properties:a density of 3.05-3.12g/cm3,a strength of 580±32MPa and a hardness of (HRA)91-92.3.
文摘Silicon carbide (SiC) ceramics is a good structural ceramics material, which have a lot of excellent properties such as superior high-temperature strength up to a temperature of 1 350 ℃, chemical stability, good resistance to thermal shock and high abrasion resistance. The silicon carbide ceramics material has so far been used widely for manufacturing various components such as heat exchangers, rolls, rockets combustion chamber. Sintering of ceramics structural parts have many technological method, the reaction-bonded is one of important sintering technology of ceramics structural parts. The preparation of reaction-bonded silicon carbide (RBSC) is based on a reaction sintering process, whereby a compacted body of α-SiC and carbon (graphite) powders is heated in contact with liquid silicon or gas silicon, which impregnates the body, converting the carbon (graphite) to β-SiC which bonds the original alpha grain. This process is characterized by low temperature and a short time sintering, and being appropriate to the preparation of large size and complex-shaped components, and so on. Besides, during compacting process of reaction sintering, it can maintain a stable dimension of ceramics parts. Therefore, the method of reaction-bonded silicon carbide ceramics has been identified as a technology suitable for producing complicated and highly exact dimensions’ ceramics parts. In this paper, the method of reaction-bonded silicon carbide was applied to the manufacturing of a complex-shaped spacecraft combustion chamber of SiC ceramics. SiC and carbon powder of 4～30 μm were chosen as the raw materials, green compacts containing appropriate wt.% carbon were formed using the mold press method, sintering was performed in a graphite electric furnace under an argon atmosphere. It was introduced in detail that the technological parameters and technological flow of reaction sintering silicon carbide ceramics. At the same time, physical and mechanical experiments such as bending strength, coefficient of thermal expansion, coefficient of thermal conductivity, gastight property, heat resisting property etc. have been carried out. The results demonstrated that spacecraft combustion chamber made from reaction sintering of silicon carbide ceramics is feasible and the results of experiment is satisfactory. The strength of high-temperature structural parts made by reaction sintered SiC varied with silicon content; Under the this article testing condition, the optimum silicon content is 10.5% for the part investigated. The method of reaction sintered SiC ceramics is suitable for manufacturing of complicated spacecraft parts with a working temperature of 1 500 ℃.
文摘The fundamental experiments were performed to establish the operational conditions required to prepare the microcapsules containing paraffin wax as a phase change material (PCM) and SiC powder with the interfacial polycondensation reaction. It was investigated how SiC powder affected a few characteristics of microcapsules such as the diameters of microcapsules, latent heat storage density, thermal responsibility and supercooling. In the experiment, the concentration of oil soluble surfactant, the revolution speed of impeller for preparing the (O/W) emulsion and the added weight of SiC powder were changed stepwise. The microcapsules containing PCM in which SiC powder was dispersed could be prepared well and characterized. The diameters of microcapsules increased by containing SiC powder and the content of SiC powder could be increased by performing surface modification of SiC powder. Latent heat storage density decreased with the content of SiC powder. Supercooling of PCM and thermal responsibility could be improved to some degree by containing SiC powder.
文摘The thermal expansion behaviors of commercially-available SiC whisker reinforced pure aluminum composites subjected to different heat treatments were studied. The results indicated that the thermal expansion behaviors were greatly affected by heat treatment. To explain the results, the microstructures and thermal mismatch stresses in the matrix of the composite were examined by the transmission electron microscope and X-ray diffraction, respectively. The results show that the dislocation density and thermal mismatch stresses in the matrix of the composites water-quenched from 600°C are much higher than those of the composite slowly cooled from 600°C. The analysis suggests that the coefficients of thermal expansion (CTE) are closely related to the change of thermal mismatch stresses and the yield strength of the matrix of the composite. The comparison of the coefficients of thermal expansion between experiments and calculations suggests that the temperature behaviors of CTE of SiC/Al composite agree better with those of Kerner's model within lower temperature range.
基金the Raman Spectroscopy Laboratory of Institute of Metal Research, Chinese Academy of Sciences for the support in the accomplishment of this paper
文摘In this study, the effect of heat treatment on the room temperature strength of W-core Si C fiber produced by chemical vapor deposition（CVD） was investigated. Thermal exposure in the temperature range of 900–1000？C decreases the strength of the Si C fiber. Fracture morphology analysis indicates that failure initiations predominantly take place at the W-core/Si C interface. A reaction layer that formed at the W-core/Si C interface during thermal exposure degraded the fiber strength and an empirical linear relationship of strength vs thickness of the reaction layer can be obtained. The kinetics of the growth of the W-core/Si C reaction layer were determined.
文摘Petroleum coke, graphite, gas carbon and lower sulfur carbon black were used to prepare reaction-bonded silicon carbide. The influences of different carbon containing materials on properties of carbonaceous precursors, sintering process, and microstructure of the prepared SiC were researched. The results show that ： （ 1 ） With the density of carbon containing materials increasing, the porosity of carbonaceous precursors decreases and the infiltrating process of liquid silicon is more difficult. （2） The reaction between carbon containing materials and liquid silicon, the volume effect is more obvious with the density of carbon containing materials increasing. （3） As the carbon containing materials density decreasing, residual carbon in reaction bonded SiC also decreases.
基金This work was supported by the National Natural Science Foundation of China （No.50172044）.
文摘SiC films were prepared by modified heating polystyrene/silica bilayer method on Si（111） substrate in normal pressure flowing Ar ambient at 1300℃ . The films were investigated by Fourier transform infrared absorption, X-ray diffraction, and scanning electron microscopy measurements. The chemical thermodynamics process is discussed. The whole reaction can be separated into four steps. The carburizing of SiO is the key step of whole reaction. The main reaction-sequence is figured out based on Gibbs free energy and equilibrium constant. Flowing Ar is necessary to continue the progress of whole reaction by means of carrying out accumulating gaseous resultants. The film is very useful for application in a variety of MOS-based devices for its silica/SiC/Si（111） structure, in which the silica layer can be removed thoroughly by the standard RCA cleaning process.
