Silicon nanowire （SiNW）, as one-dimensional semiconducting nanomaterial, has been incorporated into the filed-effect transistor （FET） devices to increase the efficacy and signal-to-noise in DNA sensing application...Silicon nanowire （SiNW）, as one-dimensional semiconducting nanomaterial, has been incorporated into the filed-effect transistor （FET） devices to increase the efficacy and signal-to-noise in DNA sensing applications. Due to the advantages of high sensitivity, excellent selectivity, label-free detection, direct electrical readout, and minia- turization, SiNW FET-based DNA sensors have been regarded as an important tool in applications of molecular di- agnostics, DNA sequencing, gene expressions, and drug discovery. Here, we review the recent progress in SiNW- FET sensors for label-free electrical DNA detection. We first introduce the working principle of SiNW-FET DNA sensors, SiNW fabrication technologies, bio-functionalization on nanowire surface, and enhancement of device sen- sitivity. Then we sum up the applications of SiNW sensors in detection of DNA hybridization, infectious viruses, microRNA, genetic change （DNA mutation, DNA methylation, and DNA repair）, and protein-DNA interactions. We address several crucial points of sensing performance including sensitivity, selectivity, and limit of detection. Finally, the perspectives, challenges, and some solutions of the field are also discussed.展开更多
We explore 10-nm wide Si nanowire （SiNW） field-effect transistors （FETs） for logic applications, via the fabrication and testing of SiNW-based ring oscillators. We report on SiNW surface treatments and dielectric ...We explore 10-nm wide Si nanowire （SiNW） field-effect transistors （FETs） for logic applications, via the fabrication and testing of SiNW-based ring oscillators. We report on SiNW surface treatments and dielectric annealing, for producing SiNW FETs that exhibit high performance in terms of large on/off-state current ratio （-10s）, low drain-induced barrier lowering （-30 mV） and low subthreshold swing （-80 mV/decade）. The performance of inverter and ring-oscillator circuits fabricated from these nanowire FETs are also explored. The inverter demonstrates the highest voltage gain （-148） reported for a SiNW-based NOT gate, and the ring oscillator exhibits near rail-to-rail oscillation centered at 13.4 MHz. The static and dynamic characteristics of these NW devices indicate that these SiNW-based FET circuits are excellent candidates for various high-performance nanoelectronic applications.展开更多
In this study, we propose a novel combination of tunneling field-effect transistors （TFETs） with asymmetrically doped p^＋-i-n^＋ silicon nanowire （SiNW） channels on a bendable substrate. The combination of two n-...In this study, we propose a novel combination of tunneling field-effect transistors （TFETs） with asymmetrically doped p^＋-i-n^＋ silicon nanowire （SiNW） channels on a bendable substrate. The combination of two n-channel SiNW-TFETs （NWTFETs） in parallel and two p-channel NWTFETs in series operates as a two-input NOR logic gate. The component NWTFETs with the n- and p-channels exhibit subthreshold swings （SSs） of 69 and 53 mV·dec^-1, respectively, and the on/off current ratios are -106. The NOR logic operation is sustainable and reproducible for up to 1,000 bending cycles with a narrow transition width of -0.26 V. The mechanical bendability of the bendable NWTFETs shows that they are stable and have good fatigue properties. To the best of our knowledge, this is the first study on the electrical and mechanical characteristics of a bendable NOR logic gate composed of NWTFETs.展开更多
In this study, we propose complementary metal-oxide-semiconductor （CMOS） NOR logic gates consisting of silicon nanowire （NW） arrays on bendable substrates. A circuit consisting of two p-channel NW field-effect tra...In this study, we propose complementary metal-oxide-semiconductor （CMOS） NOR logic gates consisting of silicon nanowire （NW） arrays on bendable substrates. A circuit consisting of two p-channel NW field-effect transistors （NWFETs） in series and two n-channel NWFETs in parallel is constructed to operate a two- input CMOS NOR logic gate. The NOR logic gates operate at a low supply voltage of 1 V with a rail-to-rail logic swing and a high voltage gain of approximately -3.0. The exact NOR logic functionality is achieved owing to the superior electrical characteristics of the well-aligned p- and n-NWFETs, which are obtained using conventional Si-based CMOS technology. Moreover, the NOR logic gates exhibit stable characteristics and have good mechanical properties. The proposed bendable NW CMOS NOR logic gates are promising building blocks for future bendable integrated electronics.展开更多
We demonstrate the direct biosensing of the Ebola VP40 matrix protein, using a memristor mode of a liquid-integrated nanodevice, based on a large array of honeycomb-shaped silicon nanowires. To shed more light on the ...We demonstrate the direct biosensing of the Ebola VP40 matrix protein, using a memristor mode of a liquid-integrated nanodevice, based on a large array of honeycomb-shaped silicon nanowires. To shed more light on the principle of biodetection using memristors, we engineered the opening of the current-minima voltage gap VG by involving the third gap-control electrode （gate voltage, VG） into the system. The primary role of VG is to mimic the presence of the charged species of the desired sign at the active area of the sensor. We further showed the advantages of biodetection with an initially opened controlled gap （Vc~ ~a 0）, which allows the detection of the lowest concentrations of the biomolecules carrying arbitrary positive or negative charges; this feature was not present in previous configurations. We compared the bio-memristor performance, in terms of its detection range and sensitivity, to that of the already-known field-effect transistor （FET） mode by operating the same device. To our knowledge, this is the first demonstration of Ebola matrix protein detection using a nanoscaled electrical sensor.展开更多
文摘Silicon nanowire （SiNW）, as one-dimensional semiconducting nanomaterial, has been incorporated into the filed-effect transistor （FET） devices to increase the efficacy and signal-to-noise in DNA sensing applications. Due to the advantages of high sensitivity, excellent selectivity, label-free detection, direct electrical readout, and minia- turization, SiNW FET-based DNA sensors have been regarded as an important tool in applications of molecular di- agnostics, DNA sequencing, gene expressions, and drug discovery. Here, we review the recent progress in SiNW- FET sensors for label-free electrical DNA detection. We first introduce the working principle of SiNW-FET DNA sensors, SiNW fabrication technologies, bio-functionalization on nanowire surface, and enhancement of device sen- sitivity. Then we sum up the applications of SiNW sensors in detection of DNA hybridization, infectious viruses, microRNA, genetic change （DNA mutation, DNA methylation, and DNA repair）, and protein-DNA interactions. We address several crucial points of sensing performance including sensitivity, selectivity, and limit of detection. Finally, the perspectives, challenges, and some solutions of the field are also discussed.
基金The authors acknowledge H. Ahmad and Y. -S. Shin for graphics assistance. This work was funded by the National Science Foundation under Grant CCF-0541461 and the Department of Energy （DE-FG02-04ER46175）. D. Tham gratefully acknowledges support by the KAUST Scholar Award.
文摘We explore 10-nm wide Si nanowire （SiNW） field-effect transistors （FETs） for logic applications, via the fabrication and testing of SiNW-based ring oscillators. We report on SiNW surface treatments and dielectric annealing, for producing SiNW FETs that exhibit high performance in terms of large on/off-state current ratio （-10s）, low drain-induced barrier lowering （-30 mV） and low subthreshold swing （-80 mV/decade）. The performance of inverter and ring-oscillator circuits fabricated from these nanowire FETs are also explored. The inverter demonstrates the highest voltage gain （-148） reported for a SiNW-based NOT gate, and the ring oscillator exhibits near rail-to-rail oscillation centered at 13.4 MHz. The static and dynamic characteristics of these NW devices indicate that these SiNW-based FET circuits are excellent candidates for various high-performance nanoelectronic applications.
文摘In this study, we propose a novel combination of tunneling field-effect transistors （TFETs） with asymmetrically doped p^＋-i-n^＋ silicon nanowire （SiNW） channels on a bendable substrate. The combination of two n-channel SiNW-TFETs （NWTFETs） in parallel and two p-channel NWTFETs in series operates as a two-input NOR logic gate. The component NWTFETs with the n- and p-channels exhibit subthreshold swings （SSs） of 69 and 53 mV·dec^-1, respectively, and the on/off current ratios are -106. The NOR logic operation is sustainable and reproducible for up to 1,000 bending cycles with a narrow transition width of -0.26 V. The mechanical bendability of the bendable NWTFETs shows that they are stable and have good fatigue properties. To the best of our knowledge, this is the first study on the electrical and mechanical characteristics of a bendable NOR logic gate composed of NWTFETs.
文摘In this study, we propose complementary metal-oxide-semiconductor （CMOS） NOR logic gates consisting of silicon nanowire （NW） arrays on bendable substrates. A circuit consisting of two p-channel NW field-effect transistors （NWFETs） in series and two n-channel NWFETs in parallel is constructed to operate a two- input CMOS NOR logic gate. The NOR logic gates operate at a low supply voltage of 1 V with a rail-to-rail logic swing and a high voltage gain of approximately -3.0. The exact NOR logic functionality is achieved owing to the superior electrical characteristics of the well-aligned p- and n-NWFETs, which are obtained using conventional Si-based CMOS technology. Moreover, the NOR logic gates exhibit stable characteristics and have good mechanical properties. The proposed bendable NW CMOS NOR logic gates are promising building blocks for future bendable integrated electronics.
文摘We demonstrate the direct biosensing of the Ebola VP40 matrix protein, using a memristor mode of a liquid-integrated nanodevice, based on a large array of honeycomb-shaped silicon nanowires. To shed more light on the principle of biodetection using memristors, we engineered the opening of the current-minima voltage gap VG by involving the third gap-control electrode （gate voltage, VG） into the system. The primary role of VG is to mimic the presence of the charged species of the desired sign at the active area of the sensor. We further showed the advantages of biodetection with an initially opened controlled gap （Vc~ ~a 0）, which allows the detection of the lowest concentrations of the biomolecules carrying arbitrary positive or negative charges; this feature was not present in previous configurations. We compared the bio-memristor performance, in terms of its detection range and sensitivity, to that of the already-known field-effect transistor （FET） mode by operating the same device. To our knowledge, this is the first demonstration of Ebola matrix protein detection using a nanoscaled electrical sensor.
