According to the sensing structure of a practical silicon resonant pressure micro sensor whose preliminary sensing unit is a square silicon diaphragm and the final sensing unit is a silicon beam resonator, its operati...According to the sensing structure of a practical silicon resonant pressure micro sensor whose preliminary sensing unit is a square silicon diaphragm and the final sensing unit is a silicon beam resonator, its operating mechanism is analyzed. The thermal resistor acts as the excited unit, and the piezoresistive unit acts as the detector, for the above micro sensor. By using the amplitude and phase conditions, the self exciting closed loop system is investigated based on the operating mechanism for the abov...展开更多
A calibration test was done in order to measure its sensitivity coefficient by an improved soil test device.The experimental result shows that the soil pressure min-sensor made of the monocrystalline silicon（SPMMS）i...A calibration test was done in order to measure its sensitivity coefficient by an improved soil test device.The experimental result shows that the soil pressure min-sensor made of the monocrystalline silicon（SPMMS）is proved to be good linear,high precision and less that can fetch precise data in low pressure range even near by O point,which guarantees the reliability of the soil pressure test in geotechnical engineering.展开更多
The principle of miniature isolated solid-state encapsulation technology of high-temperature pressure sensor and the structure of packaging are discussed, including static electricity bonding, stainless steel diaphrag...The principle of miniature isolated solid-state encapsulation technology of high-temperature pressure sensor and the structure of packaging are discussed, including static electricity bonding, stainless steel diaphragm selection and rippled design, laser welding, silicon oil infilling, isolation and other techniques used in sensor packaging, which can affect the performance of the sensor. By adopting stainless steel diaphragm and high-temperature silicon oil as isolation materials, not only the encapsulation of the sensor is as small as 15 mm in diameter and under 1 mA drive, its full range output is 72 mV and zero stability is 0.48% F.S/mon, but also the reliability of the sensor is improved and its application is widely broadened.展开更多
Piezoresistive pressure sensors with a twin-island structure were suc- cessfully fabricated using high quality Unibond-SOI (On Insulator) materials. Since the piezoresistors were structured by the single crystalline s...Piezoresistive pressure sensors with a twin-island structure were suc- cessfully fabricated using high quality Unibond-SOI (On Insulator) materials. Since the piezoresistors were structured by the single crystalline silicon overlayer of the SOI wafer and were totally isolated by the buried SiO2. the sensors are radiation-hard. The sensitivity and the linearity of the pressure sensors keep their original values after being irradiated by 60Co γ-rays up to 2.3×104Gy (H2O). However, the offset voltage of the sensor has a slight drift, increasing with the radiation dose. The absolute value of the offset voltage deviation depends on the pressure sensor itself. For comparison, corresponding polysilicon pressure sensors were fabricated using the similar process and irradiated at the same condition.展开更多
A silicon pressure sensor is one of the very first MEMS components appearing in the microsystem area.The market for the MEMS pressure sensor is rapidly growing due to consumer electronic applications in recent years. ...A silicon pressure sensor is one of the very first MEMS components appearing in the microsystem area.The market for the MEMS pressure sensor is rapidly growing due to consumer electronic applications in recent years. Requirements of the pressure sensors with low cost, low power consumption and high accuracy drive one to develop a novel technology. This paper first overviews the historical development of the absolute pressure sensor briefly. It then reviews the state of the art technology for fabricating crystalline silicon membranes over sealed cavities by using the silicon migration technology in detail. By using only one lithographic step, the membranes defined in lateral and vertical dimensions can be realized by the technology. Finally, applications of MEMS through using the silicon migration technology are summarized.展开更多
A kind of filed-emission array pressure sensor is designed based on the quantum tunnel effect. The nano-crystalline silicon film is prepared by chemical vapor deposition (CVD) method, with the grain dimension and thic...A kind of filed-emission array pressure sensor is designed based on the quantum tunnel effect. The nano-crystalline silicon film is prepared by chemical vapor deposition (CVD) method, with the grain dimension and thickness of the film 3—9 nm and 30—40 nm, respectively. The nano-crystal- line silicon film is introduced into the cathode cones of the sensor, functioning as the essential emission part. The silicon nano phase is analyzed by HREM and TED, the microstructure of the single emitter and emitters array is inspected by SEM, and the field emission characteristics of the device are studied by an HP4145B transistor tester. The experimental results show that the measured current density emitted from the effective area of the sensor can reach 53.5 A/m2 when the exterior electric field is 5.6×105 V/m.展开更多
Flexible pressure sensors play an important role in the field of monitoring, owing to their inherent safety and the fact that they are embedded at the material level. Capacitive pressure sensors have been proven to be...Flexible pressure sensors play an important role in the field of monitoring, owing to their inherent safety and the fact that they are embedded at the material level. Capacitive pressure sensors have been proven to be quite versatile, with the ability to change the sensitivity and monitoring range by modifying the pore structure of the dielectric layer(elastic modulus). In this paper, capacitive pressure sensors are devised, comprising hierarchical porous polydimethylsiloxane. Due to the inherent hollow and hierarchical micropore structure, the capacitive pressure sensor allows operation at a wider pressure range(~1000 kPa) while maintaining sensitivity(6.33 MPa-1) in the range of 0–300 k Pa. Subsequently, the capacitance output model of the sensor is optimized, which provides an overall approximation of the experimental values for the sensor performance. Additionally, the signal response of the“break up the whole into parts”(by analysis of the whole sensor in parts) is simulated and outputted by the finite element analysis. The simplified analysis model provides a good understanding of the relationship between the local pressure and the signal response of the pressure sensor. For practical applications, seal monitoring and rubber wheel pressure array system are tested, and the proposed sensor shows sufficient potential for application in large deformation elastomer products.展开更多
基金The Chinese Aeronautics Science Foundation(99I5 10 0 6)Foundation for University Key Teacherby the Ministry of Education
文摘According to the sensing structure of a practical silicon resonant pressure micro sensor whose preliminary sensing unit is a square silicon diaphragm and the final sensing unit is a silicon beam resonator, its operating mechanism is analyzed. The thermal resistor acts as the excited unit, and the piezoresistive unit acts as the detector, for the above micro sensor. By using the amplitude and phase conditions, the self exciting closed loop system is investigated based on the operating mechanism for the abov...
文摘A calibration test was done in order to measure its sensitivity coefficient by an improved soil test device.The experimental result shows that the soil pressure min-sensor made of the monocrystalline silicon（SPMMS）is proved to be good linear,high precision and less that can fetch precise data in low pressure range even near by O point,which guarantees the reliability of the soil pressure test in geotechnical engineering.
文摘The principle of miniature isolated solid-state encapsulation technology of high-temperature pressure sensor and the structure of packaging are discussed, including static electricity bonding, stainless steel diaphragm selection and rippled design, laser welding, silicon oil infilling, isolation and other techniques used in sensor packaging, which can affect the performance of the sensor. By adopting stainless steel diaphragm and high-temperature silicon oil as isolation materials, not only the encapsulation of the sensor is as small as 15 mm in diameter and under 1 mA drive, its full range output is 72 mV and zero stability is 0.48% F.S/mon, but also the reliability of the sensor is improved and its application is widely broadened.
基金Supported by Science and Technology Development Foundation of Shanghai under Grant (No.98JC14004) partly by National Natural
文摘Piezoresistive pressure sensors with a twin-island structure were suc- cessfully fabricated using high quality Unibond-SOI (On Insulator) materials. Since the piezoresistors were structured by the single crystalline silicon overlayer of the SOI wafer and were totally isolated by the buried SiO2. the sensors are radiation-hard. The sensitivity and the linearity of the pressure sensors keep their original values after being irradiated by 60Co γ-rays up to 2.3×104Gy (H2O). However, the offset voltage of the sensor has a slight drift, increasing with the radiation dose. The absolute value of the offset voltage deviation depends on the pressure sensor itself. For comparison, corresponding polysilicon pressure sensors were fabricated using the similar process and irradiated at the same condition.
基金Project supported by the National Major Science&Technology Program of China(No.2011ZX02507-001)
文摘A silicon pressure sensor is one of the very first MEMS components appearing in the microsystem area.The market for the MEMS pressure sensor is rapidly growing due to consumer electronic applications in recent years. Requirements of the pressure sensors with low cost, low power consumption and high accuracy drive one to develop a novel technology. This paper first overviews the historical development of the absolute pressure sensor briefly. It then reviews the state of the art technology for fabricating crystalline silicon membranes over sealed cavities by using the silicon migration technology in detail. By using only one lithographic step, the membranes defined in lateral and vertical dimensions can be realized by the technology. Finally, applications of MEMS through using the silicon migration technology are summarized.
文摘A kind of filed-emission array pressure sensor is designed based on the quantum tunnel effect. The nano-crystalline silicon film is prepared by chemical vapor deposition (CVD) method, with the grain dimension and thickness of the film 3—9 nm and 30—40 nm, respectively. The nano-crystal- line silicon film is introduced into the cathode cones of the sensor, functioning as the essential emission part. The silicon nano phase is analyzed by HREM and TED, the microstructure of the single emitter and emitters array is inspected by SEM, and the field emission characteristics of the device are studied by an HP4145B transistor tester. The experimental results show that the measured current density emitted from the effective area of the sensor can reach 53.5 A/m2 when the exterior electric field is 5.6×105 V/m.
基金supported by the National Natural Science Foundation of China(Grant No.52075119)。
文摘Flexible pressure sensors play an important role in the field of monitoring, owing to their inherent safety and the fact that they are embedded at the material level. Capacitive pressure sensors have been proven to be quite versatile, with the ability to change the sensitivity and monitoring range by modifying the pore structure of the dielectric layer(elastic modulus). In this paper, capacitive pressure sensors are devised, comprising hierarchical porous polydimethylsiloxane. Due to the inherent hollow and hierarchical micropore structure, the capacitive pressure sensor allows operation at a wider pressure range(~1000 kPa) while maintaining sensitivity(6.33 MPa-1) in the range of 0–300 k Pa. Subsequently, the capacitance output model of the sensor is optimized, which provides an overall approximation of the experimental values for the sensor performance. Additionally, the signal response of the“break up the whole into parts”(by analysis of the whole sensor in parts) is simulated and outputted by the finite element analysis. The simplified analysis model provides a good understanding of the relationship between the local pressure and the signal response of the pressure sensor. For practical applications, seal monitoring and rubber wheel pressure array system are tested, and the proposed sensor shows sufficient potential for application in large deformation elastomer products.
